Machining device and machining method for enhancing sapphire laser back wet etching rate

A wet etching and processing device technology, applied in laser welding equipment, metal processing equipment, manufacturing tools, etc., can solve the problems of liquid can not overflow in time, difficult to process, reduce processing efficiency, etc., to enhance the laser etching rate, Reduced pressure difference and good processing quality

Active Publication Date: 2013-12-04
GUANGDONG UNIV OF TECH
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Problems solved by technology

However, when cutting thicker sapphire, as the cutting depth increases, the liquid cannot overflow to the already ...

Method used

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  • Machining device and machining method for enhancing sapphire laser back wet etching rate
  • Machining device and machining method for enhancing sapphire laser back wet etching rate
  • Machining device and machining method for enhancing sapphire laser back wet etching rate

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Embodiment

[0024] The structure diagram of the present invention is as figure 1 , 2 , 3, the processing device of the strong sapphire laser facing away from the wet etching rate of the present invention includes a protection device 3, a laser beam 4, a lens group 5, a container 6, and a confinement layer 10, wherein the container 6 is set in a hollow cavity A working fluid 1 is installed, the workpiece 2 is placed on the surface of the working fluid 1 and is in contact with the working fluid 1, the protection device 3 is installed on the top surface of the workpiece 2, the limiting layer 10 is installed under the workpiece 2, and the laser beam 4 passes through The lens group 5 illuminates the back side of the workpiece 2 .

[0025] The above-mentioned working liquid 1 is CuSO with a mass concentration that can be adjusted within the range of 1 to 25% for laser-induced photochemical deposition. 4 solution or CuSO 4 mixture. In the present embodiment, the above-mentioned working liqui...

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Abstract

The invention relates to a machining device and a machining method for enhancing a sapphire laser back wet etching rate. The machining device comprises a protection device, a laser beam, a lens assembly, a container and a limit layer, operating fluid is filled in a hollow cavity formed in the container, a workpiece is placed on the surface of the operating fluid and contacts with the operating fluid, the protection device is mounted at the top of the workpiece, the limit layer is mounted below the workpiece, and the laser beam irradiates the back of the workpiece through the lens assembly. The machining device has a high material removing rate under the condition of ensuring fine surface machining quality of sapphires. According to the machining method, chippings are easily taken away by the fluid, the heat effect of laser ablation is small, a regelation layer in a machining area is omitted, machining quality is fine, a laser-induced cavitation effect leads to a micro-jet enhancement effect, the laser etching rate of transparent materials such as the sapphires is enhanced, and micro-structures and shape cutting of material surfaces can be realized. The machining method is simple to operate, convenient, practical and high in machining speed.

Description

technical field [0001] The invention relates to a processing device and a processing method for enhancing the sapphire laser back-to-wet etching rate for cutting, drilling and manufacturing surface microstructures of sapphire, and belongs to the processing device and processing method of sapphire laser back-to-wet etching innovative technology. Background technique [0002] Sapphire single crystal has high hardness (Mohs hardness is 9), high melting point (2030 o C), good wear resistance, high temperature (1000 o C) It can still maintain good comprehensive properties such as chemical stability and high transmittance. It is known as the basic material of the "new light source revolution" and is the most important industrialized substrate for the third-generation semiconductor material GaN. The market demand is increasing by 40% per year. speed increased rapidly. Sapphire has been widely used in many fields such as electronic information, national defense and medical treatm...

Claims

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Application Information

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IPC IPC(8): B23K26/36B23K26/08B23K26/14B23K26/16B23K26/42H01L33/00
Inventor 谢小柱魏昕胡伟苑学瑞胡满凤高勋银
Owner GUANGDONG UNIV OF TECH
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