31 results about "Photochemical deposition" patented technology

Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

The invention discloses a preparation method for Au-Ag co-modified N-doped ZnO nanorods, the ZnO nanorods obtained according to the preparation method, and application of the ZnO nanorods. According to a photochemical deposition method, a simple and environment-friendly in-situ synthesis method for the ZnO nanorods is formed and comprises the following two steps: electrons generated on the ZnO nanorods serve as a reducing agent to react with Ag<+> ions in a solution, so that in-situ deposition of Ag nano-particles on the surfaces of the ZnO nanorods is realized; then, the reaction product is directly put in a HAuCl4 solution, and electrons generated on the Ag nano-particles serve as a reducing agent to react with AuCl4<-> ions in the HAuCl4 solution. No any additional reducing reagents and organic modifiers are needed in the two steps, so that the reaction processes are environmentally friendly; a clean contact interface is beneficial to rapid separation and transfer of photo-generated electrons, and improvement in the photo-electrochemical activity of a material.

A method and apparatus are provided for growing a composite metal sulphide photcatalyst thin film, wherein photochemical deposition and chemical bath deposition are both performed for growing the composite metal sulphide thin film, such as (AgInS2)x / (ZnS)2(1-x), wherein x is 0-1.

The invention, which relates to the technical field of the semiconductor optoelectronic material, provides a method for preparing a cadmium-sulfide nano film based on deep ultraviolet photochemical bath deposition. A metal source CdSO4, a sulfur source Na2S2O3, and a sulfur source release control agent containing SO3<2-> and an H2SO4 solution are mixed to obtain a deposition solution, wherein the pH of the deposition solution is stabilized to be 3.5 to 4.0; a substrate is immersed into the deposition solution, wherein the distance between the surface of the deposition solution and the upper surface of the substrate is less than 1mm; and radiation is carried out by using LED deep-ultraviolet light, thereby forming a cadmium-sulfide nano film. Using the method, the sulfur source release can be controlled, thereby improving homogeneity of film growing. Compared with the common photochemical deposition technology, the provided method has the following beneficial effects: the deep ultraviolet light source has the low power and the heating effect is low; on the basis of the optical design, the deep ultraviolet light intensity is uniform in a fixed range; and the high-quality cadmium-sulfide nano film that can meet the requirement of the buffer layer of the copper-indium-gallium-selenium solar cell, has high uniformity, and is in close contact with the substrate can be prepared.

The invention belongs to the field of new energy materials and electrochemical catalysis, and discloses a preparation method and application of a silver-loaded Ag / alpha-Co(OH)2 oxygen evolution catalyst. The transition metal oxygen evolution catalyst is prepared by a simple and convenient photochemical deposition method, and due to the introduction of noble metal Ag, the catalytic material generates a surface plasma resonance effect under laser irradiation, so that the electro-catalytic oxygen evolution reaction performance is further improved. The composite catalyst shows excellent OER catalytic performance in 1.0 M KOH electrolyte under the irradiation of green laser with different powers. The overpotential of the Ag / alpha-Co(OH) (2-3%) is 278 mV under the current density of 10 mA cm <-2 >. During green laser irradiation, the overpotentials are respectively reduced to 269mV and 243mV under the light intensity of 500mW and 1000mW. The catalyst provided by the invention can be used as an electrocatalyst in the field of renewable fuel cells, rechargeable metal-air cells or electrolyzed water.

The invention discloses a method for preparing a CIGS film based on photochemistry deposition. According to the method, a conductive substrate is plated with a Se or S film firstly, then the conductive substrate plated with the Se or S film is placed in a solution system containing at least two kinds of indium ions, gallium ions, selenium ions and copper ions and a photoelectron releasing agent for photochemistry deposition, and then the CIGS film is obtained. According to the method, the photochemistry deposition method is successfully applied to the preparation of the CIGS film, the growth situation and morphology of the photochemistry deposition CIGS film can be effectively controlled, the prepared CIGS film is good in surface morphology and high in density, composition is controllable, the problems of poor deposition controllability and film nonuniformity existing in a traditional photochemistry deposition process are effectively solved, the material utilization rate is high, cost is low, and large-scale production and promotion can be achieved.

The invention discloses a method for preparing a noble-metal-supported p-NiO / n-NiFe2O4 composite semiconductor photocatalyst. The method comprises the following steps of: 1, sequentially performing microwave reaction on nickel salt, iron salt, citric acid, alkali and deionized water which are taken as raw materials, performing ultrasonic dispersion, heating and reacting, washing, performing ultrasonic dispersion, filtering, drying, roasting and grinding to obtain NiFe2O4 solid powder; 2, sequentially reacting the NiFe2O4 solid powder, nickel salt, alkali and deionized water which are taken asraw materials, performing ultrasonic dispersion, dehydrating under reduced pressure, performing heat treatment, washing, performing ultrasonic dispersion, filtering, drying, roasting and grinding to obtain p-NiO / n-NiFe2O4 solid powder; and 3, sequentially stirring the p-NiO / n-NiFe2O4 solid powder, a noble metal compound, ethanol and deionized water which are taken as raw materials and dissolving,performing ultrasonic dispersion, performing photochemical deposition reaction, removing a solvent under reduced pressure, performing heat treatment, washing, filtering, drying, roasting and grindingto obtain the noble-metal-supported p-NiO / n-NiFe2O4 composite semiconductor photocatalyst.

The invention discloses a method for preparing a CIGS film based on photochemistry deposition. According to the method, a conductive substrate is plated with a Se or S film firstly, then the conductive substrate plated with the Se or S film is placed in a solution system containing at least two kinds of indium ions, gallium ions, selenium ions and copper ions and a photoelectron releasing agent for photochemistry deposition, and then the CIGS film is obtained. According to the method, the photochemistry deposition method is successfully applied to the preparation of the CIGS film, the growth situation and morphology of the photochemistry deposition CIGS film can be effectively controlled, the prepared CIGS film is good in surface morphology and high in density, composition is controllable, the problems of poor deposition controllability and film nonuniformity existing in a traditional photochemistry deposition process are effectively solved, the material utilization rate is high, cost is low, and large-scale production and promotion can be achieved.

The invention provides a titanium dioxide-carbon composite carrier supported platinum electrocatalyst and a preparation method thereof. The titanium dioxide-carbon composite carrier supported platinumelectrocatalyst comprises a titanium dioxide-carbon carrier and platinum particles, wherein the titanium dioxide-carbon carrier is carbon black loaded with titanium dioxide on the surface, and the platinum particles are loaded on the surface of titanium dioxide. The titanium dioxide-carbon composite carrier supported platinum electrocatalyst provided by the invention contributes to transferring electrons from the carrier to the catalyst, so that the stability of the catalyst activity can be greatly improved. The titanium oxide-carbon composite carrier supported platinum electrocatalyst is prepared by liquid phase assembly and photochemical deposition, and TiO2 can be uniformly loaded on the surface of spherical carbon black. Therefore, the activity of the catalyst is increased.

A multi-functional integrated Fe-Al-Ta eutectic composite material and its preparation method, using electron beam suspension zone smelting technology, spraying and photochemical deposition technology combined, in the process of preparing materials by changing Fe-Al-Ta eutectic The solidification rate of the crystalline composite material, and the use of spraying and photochemical deposition techniques to process a certain area of ​​the material. This area can be in any shape or pattern, so that the prepared material has the required specific properties in the patterned area. In this way, a material with multiple functions integrated can be prepared. Therefore, through the combination of three technologies, first change the solidification rate of different regions to change the solidification structure of the material, and then use spraying and photochemical deposition techniques in a specific region for specific processing according to actual needs. The sample set has multiple functions in one. The performance of materials is centralized, simplified and diversified, and the comprehensive performance is thus improved.

A process for preparing the sewage treating apparatus includes such steps as preparing the slurry of anatase-type TiO2 nano-particle by sol-gel method, preparing photocatalyst Ag / TiO2 by photochemical deposition method, adding TiO2 to AgNO3 solution, adsorbing while stirring, radiating by low-pressure Hg lamp, distilled water washing to remove excessive Ag ions, braiding glass fibers to obtain needed shape, immersing it in modified TiO2 nano-particles slurry, sintering and installing it to the frame made of plastic tube.

The invention, which relates to the technical field of the semiconductor optoelectronic material, provides a method for preparing a cadmium-sulfide nano film based on deep ultraviolet photochemical bath deposition. A metal source CdSO4, a sulfur source Na2S2O3, and a sulfur source release control agent containing SO3<2-> and an H2SO4 solution are mixed to obtain a deposition solution, wherein the pH of the deposition solution is stabilized to be 3.5 to 4.0; a substrate is immersed into the deposition solution, wherein the distance between the surface of the deposition solution and the upper surface of the substrate is less than 1mm; and radiation is carried out by using LED deep-ultraviolet light, thereby forming a cadmium-sulfide nano film. Using the method, the sulfur source release can be controlled, thereby improving homogeneity of film growing. Compared with the common photochemical deposition technology, the provided method has the following beneficial effects: the deep ultraviolet light source has the low power and the heating effect is low; on the basis of the optical design, the deep ultraviolet light intensity is uniform in a fixed range; and the high-quality cadmium-sulfide nano film that can meet the requirement of the buffer layer of the copper-indium-gallium-selenium solar cell, has high uniformity, and is in close contact with the substrate can be prepared.

The invention provides a method for preparing manganese oxide composite carbon nitride nanotubes, using melamine as a precursor, and preparing carbon nitride nanotubes through a hydrothermal-calcination two-step method; Manganese oxide composite carbon nitride nanotube photocatalytic nanoreactor was prepared by deposition method. The composite photocatalytic nanoreactor has been proved to have good photoelectric performance by a series of characterization means, which is attributed to the modification of manganese oxide not only to improve the absorption of visible light by the nanoreactor, but also as the oxidation activity on the carbon nitride nanoreactor. The sites are enriched for photogenerated holes. The nanoreactor reacts with superoxide radicals (·O 2 ‑ ) and photogenerated holes as the main active oxidants to degrade target organic pollutants. The nanoreactor still maintained 80% of its photocatalytic oxidation performance after 5 cycles. The nano reactor has the advantages of high efficiency, stability and no secondary pollution. Exhibited excellent antibiotic degradation efficiency.

Aiming at the problem that high-performance micro-nano magnetoelectric coupling devices are not easy to be controllably prepared, the present invention proposes a patterned +Z and -Z ferroelectric domain processing of ferroelectric thin films through piezoelectric force response microscopy technology, and then through The photochemical deposition method polarizes self-assembled magnetic metal nanoparticles on the surface of ferroelectric domains, and prepares a magnetoelectric coupling device with ferroelectric film and self-assembled magnetic nanoparticle structure. The device includes a ferroelectric thin film layer, a conductive substrate supporting the ferroelectric thin film, and a magnetic nanoparticle structure formed by self-assembly on the ferroelectric thin film layer. The invention utilizes the piezoelectric force response microscopy technology to process PZT ferroelectric domains at the micro-nano level according to the polarization distribution of any pattern, and self-assembles the magnetic metal nanoparticle structure through the photochemical deposition method. The production process is simple, and it is suitable for micro-nano magnetoelectric coupling devices. Integrated preparation.