31 results about "Photochemical deposition" patented technology

A method and apparatus are provided for growing a composite metal sulphide photcatalyst thin film, wherein photochemical deposition and chemical bath deposition are both performed for growing the composite metal sulphide thin film, such as (AgInS2)x / (ZnS)2(1-x), wherein x is 0-1.

The invention discloses a method for preparing a noble-metal-supported p-NiO / n-NiFe2O4 composite semiconductor photocatalyst. The method comprises the following steps of: 1, sequentially performing microwave reaction on nickel salt, iron salt, citric acid, alkali and deionized water which are taken as raw materials, performing ultrasonic dispersion, heating and reacting, washing, performing ultrasonic dispersion, filtering, drying, roasting and grinding to obtain NiFe2O4 solid powder; 2, sequentially reacting the NiFe2O4 solid powder, nickel salt, alkali and deionized water which are taken asraw materials, performing ultrasonic dispersion, dehydrating under reduced pressure, performing heat treatment, washing, performing ultrasonic dispersion, filtering, drying, roasting and grinding to obtain p-NiO / n-NiFe2O4 solid powder; and 3, sequentially stirring the p-NiO / n-NiFe2O4 solid powder, a noble metal compound, ethanol and deionized water which are taken as raw materials and dissolving,performing ultrasonic dispersion, performing photochemical deposition reaction, removing a solvent under reduced pressure, performing heat treatment, washing, filtering, drying, roasting and grindingto obtain the noble-metal-supported p-NiO / n-NiFe2O4 composite semiconductor photocatalyst.

The invention discloses a method for preparing a CIGS film based on photochemistry deposition. According to the method, a conductive substrate is plated with a Se or S film firstly, then the conductive substrate plated with the Se or S film is placed in a solution system containing at least two kinds of indium ions, gallium ions, selenium ions and copper ions and a photoelectron releasing agent for photochemistry deposition, and then the CIGS film is obtained. According to the method, the photochemistry deposition method is successfully applied to the preparation of the CIGS film, the growth situation and morphology of the photochemistry deposition CIGS film can be effectively controlled, the prepared CIGS film is good in surface morphology and high in density, composition is controllable, the problems of poor deposition controllability and film nonuniformity existing in a traditional photochemistry deposition process are effectively solved, the material utilization rate is high, cost is low, and large-scale production and promotion can be achieved.

The invention provides a titanium dioxide-carbon composite carrier supported platinum electrocatalyst and a preparation method thereof. The titanium dioxide-carbon composite carrier supported platinumelectrocatalyst comprises a titanium dioxide-carbon carrier and platinum particles, wherein the titanium dioxide-carbon carrier is carbon black loaded with titanium dioxide on the surface, and the platinum particles are loaded on the surface of titanium dioxide. The titanium dioxide-carbon composite carrier supported platinum electrocatalyst provided by the invention contributes to transferring electrons from the carrier to the catalyst, so that the stability of the catalyst activity can be greatly improved. The titanium oxide-carbon composite carrier supported platinum electrocatalyst is prepared by liquid phase assembly and photochemical deposition, and TiO2 can be uniformly loaded on the surface of spherical carbon black. Therefore, the activity of the catalyst is increased.

A multi-functional integrated Fe-Al-Ta eutectic composite material and its preparation method, using electron beam suspension zone smelting technology, spraying and photochemical deposition technology combined, in the process of preparing materials by changing Fe-Al-Ta eutectic The solidification rate of the crystalline composite material, and the use of spraying and photochemical deposition techniques to process a certain area of ​​the material. This area can be in any shape or pattern, so that the prepared material has the required specific properties in the patterned area. In this way, a material with multiple functions integrated can be prepared. Therefore, through the combination of three technologies, first change the solidification rate of different regions to change the solidification structure of the material, and then use spraying and photochemical deposition techniques in a specific region for specific processing according to actual needs. The sample set has multiple functions in one. The performance of materials is centralized, simplified and diversified, and the comprehensive performance is thus improved.

The invention, which relates to the technical field of the semiconductor optoelectronic material, provides a method for preparing a cadmium-sulfide nano film based on deep ultraviolet photochemical bath deposition. A metal source CdSO4, a sulfur source Na2S2O3, and a sulfur source release control agent containing SO3<2-> and an H2SO4 solution are mixed to obtain a deposition solution, wherein the pH of the deposition solution is stabilized to be 3.5 to 4.0; a substrate is immersed into the deposition solution, wherein the distance between the surface of the deposition solution and the upper surface of the substrate is less than 1mm; and radiation is carried out by using LED deep-ultraviolet light, thereby forming a cadmium-sulfide nano film. Using the method, the sulfur source release can be controlled, thereby improving homogeneity of film growing. Compared with the common photochemical deposition technology, the provided method has the following beneficial effects: the deep ultraviolet light source has the low power and the heating effect is low; on the basis of the optical design, the deep ultraviolet light intensity is uniform in a fixed range; and the high-quality cadmium-sulfide nano film that can meet the requirement of the buffer layer of the copper-indium-gallium-selenium solar cell, has high uniformity, and is in close contact with the substrate can be prepared.

The invention provides a method for preparing manganese oxide composite carbon nitride nanotubes, using melamine as a precursor, and preparing carbon nitride nanotubes through a hydrothermal-calcination two-step method; Manganese oxide composite carbon nitride nanotube photocatalytic nanoreactor was prepared by deposition method. The composite photocatalytic nanoreactor has been proved to have good photoelectric performance by a series of characterization means, which is attributed to the modification of manganese oxide not only to improve the absorption of visible light by the nanoreactor, but also as the oxidation activity on the carbon nitride nanoreactor. The sites are enriched for photogenerated holes. The nanoreactor reacts with superoxide radicals (·O 2 ‑ ) and photogenerated holes as the main active oxidants to degrade target organic pollutants. The nanoreactor still maintained 80% of its photocatalytic oxidation performance after 5 cycles. The nano reactor has the advantages of high efficiency, stability and no secondary pollution. Exhibited excellent antibiotic degradation efficiency.

Aiming at the problem that high-performance micro-nano magnetoelectric coupling devices are not easy to be controllably prepared, the present invention proposes a patterned +Z and -Z ferroelectric domain processing of ferroelectric thin films through piezoelectric force response microscopy technology, and then through The photochemical deposition method polarizes self-assembled magnetic metal nanoparticles on the surface of ferroelectric domains, and prepares a magnetoelectric coupling device with ferroelectric film and self-assembled magnetic nanoparticle structure. The device includes a ferroelectric thin film layer, a conductive substrate supporting the ferroelectric thin film, and a magnetic nanoparticle structure formed by self-assembly on the ferroelectric thin film layer. The invention utilizes the piezoelectric force response microscopy technology to process PZT ferroelectric domains at the micro-nano level according to the polarization distribution of any pattern, and self-assembles the magnetic metal nanoparticle structure through the photochemical deposition method. The production process is simple, and it is suitable for micro-nano magnetoelectric coupling devices. Integrated preparation.