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Method for preparing noble-metal-supported p-NiO/n-NiFe2O4 composite semiconductor photocatalyst

An n-nife2o4, compound semiconductor technology, applied in the field of photocatalytic materials, can solve the problem that compound semiconductor photocatalyst research has not been reported in literature, and achieve the effect of improving photocatalytic efficiency and improving uniformity

Inactive Publication Date: 2012-03-28
NANJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, regarding noble metal loaded p-NiO / n-NiFe 2 o 4 Research on compound semiconductor photocatalysts has not been reported in the literature

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] NiFe 2 o 4 Preparation of solid powder:

[0032]Nickel nitrate hexahydrate: 3.5%

[0033] Ferric nitrate nonahydrate: 9.7%

[0034] Citric acid: 10.1%

[0035] Sodium Hydroxide: 6.4%

[0036] Deionized water: 70.3%

[0037] NiFe 2 o 4 Preparation of solid powder: According to the above mass percentage, mix nickel nitrate hexahydrate, ferric nitrate nonahydrate, citric acid and deionized water, stir until completely dissolved, neutralize with sodium hydroxide to pH = 10, and use a power of 1000W React in a microwave reactor for 3h, react at 60°C for 2h under ultrasonic dispersion with a frequency of 30kHZ and a power of 900W, dry at 120°C for 4h, and roast at 200°C for 3h. After cooling, the product is ground into a solid powder, and the solid powder Add 8 times its mass in deionized water, ultrasonically disperse, wash, filter and dry. After repeating this three times, bake at 280°C for 1.5h, at 380°C for 1.5h, at 480°C for 1.5h, and at 580°C Calcined for 2 hou...

Embodiment 2

[0051] NiFe 2 o 4 Preparation of solid powder:

[0052] Nickel sulfate hexahydrate: 2.1%

[0053] Iron sulfate nonahydrate: 9.0%

[0054] Citric acid: 6.5%

[0055] Potassium Hydroxide: 5.7%

[0056] Deionized water: 76.7%

[0057] NiFe 2 o 4 Preparation of solid powder: According to the above mass percentage, mix nickel nitrate hexahydrate, ferric nitrate nonahydrate, citric acid and deionized water, stir until completely dissolved, neutralize with potassium hydroxide to pH=9.5, and use 1000W power React in a microwave reactor for 1h, react at 60°C for 4h under ultrasonic dispersion with a frequency of 40kHZ and a power of 1500W, dry at 120°C to constant weight, and roast at 200°C for 2h. After cooling, the product is ground into a solid powder. Add the solid powder into deionized water 12 times its mass, ultrasonically disperse, wash, filter and dry, repeat this three times, then roast at 280°C for 1h, at 380°C for 1h, at 480°C for 2h, and at 580°C 2h, after cooling...

Embodiment 3

[0071] NiFe 2 o 4 Preparation of solid powder:

[0072] Nickel chloride hexahydrate: 2.2%

[0073] Ferric chloride hexahydrate: 4.9%

[0074] Citric acid: 7.4%

[0075] Lithium hydroxide: 2.8%

[0076] Deionized water: 82.7%

[0077] NiFe 2 o 4 Preparation of solid powder: According to the above mass percentage, mix nickel chloride hexahydrate, ferric chloride hexahydrate, citric acid and deionized water, stir until completely dissolved, neutralize to pH=9 with lithium hydroxide, and React in a 750W microwave reactor for 3h, react at 60°C for 2h under ultrasonic dispersion with a frequency of 35kHZ and a power of 900W, dry at 120°C to constant weight, roast at 230°C for 2h, and grind the product into a solid powder after cooling , add the solid powder into deionized water 20 times its mass, ultrasonically disperse, wash, filter and dry, repeat this three times, then bake at 270°C for 1h, at 360°C for 1.5h, and at 470°C for 1.5h, Calcined at 590°C for 3h, cooled and gr...

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PUM

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Abstract

The invention discloses a method for preparing a noble-metal-supported p-NiO / n-NiFe2O4 composite semiconductor photocatalyst. The method comprises the following steps of: 1, sequentially performing microwave reaction on nickel salt, iron salt, citric acid, alkali and deionized water which are taken as raw materials, performing ultrasonic dispersion, heating and reacting, washing, performing ultrasonic dispersion, filtering, drying, roasting and grinding to obtain NiFe2O4 solid powder; 2, sequentially reacting the NiFe2O4 solid powder, nickel salt, alkali and deionized water which are taken asraw materials, performing ultrasonic dispersion, dehydrating under reduced pressure, performing heat treatment, washing, performing ultrasonic dispersion, filtering, drying, roasting and grinding to obtain p-NiO / n-NiFe2O4 solid powder; and 3, sequentially stirring the p-NiO / n-NiFe2O4 solid powder, a noble metal compound, ethanol and deionized water which are taken as raw materials and dissolving,performing ultrasonic dispersion, performing photochemical deposition reaction, removing a solvent under reduced pressure, performing heat treatment, washing, filtering, drying, roasting and grindingto obtain the noble-metal-supported p-NiO / n-NiFe2O4 composite semiconductor photocatalyst.

Description

technical field [0001] The invention relates to a noble metal loaded p-NiO / n-NiFe 2 o 4 The invention discloses a method for preparing a composite semiconductor photocatalyst, belonging to the field of photocatalytic materials. Background technique [0002] Driven by the energy crisis and environmental crisis, the development and utilization of renewable energy has become a hot spot of global concern. Solar energy is the most abundant energy available to human beings. It is an inexhaustible, inexhaustible, pollution-free, cheap energy that can be used freely and peacefully by all countries in the world. It is also a variety of renewable energy such as biomass energy, wind energy, Ocean energy, water energy and other energy sources. For this reason, the governments of various countries attach great importance to the development and utilization of solar energy, and the development and utilization of solar energy has become a hot research field that governments have invested...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/89B01J37/34
Inventor 王晟李红燕朱姗
Owner NANJING UNIV OF TECH
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