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Organic electroluminescence device and production method thereof

An electroluminescent device and luminescent technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of reduced luminous efficiency of devices, reduced recombination probability of holes and electrons, etc., to improve recombination probability , Improve luminous efficiency, speed up the effect of transmission rate

Inactive Publication Date: 2013-12-18
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In traditional light-emitting devices, the hole transport rate is generally more than two orders of magnitude higher than the electron transport rate, which causes a large number of holes to accumulate in the light-emitting region, while the number of electrons is small, which eventually leads to a large recombination probability of holes and electrons. Reduced, the luminous efficiency of the device is reduced

Method used

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  • Organic electroluminescence device and production method thereof
  • Organic electroluminescence device and production method thereof

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preparation example Construction

[0032] The present invention also provides a method for preparing the above-mentioned organic electroluminescence device, comprising the following steps:

[0033]S1. First, carry out photolithography treatment on the anode substrate, and then use detergent, deionized water, acetone, ethanol, and isopropanol to ultrasonically clean each for 15 minutes to remove organic pollutants on the surface of the anode substrate;

[0034] S2. Perform oxygen plasma treatment on the cleaned anode base, the treatment time is 5-15min, and the power is 10-50W;

[0035] S3. Evaporating quantum wells on the surface of the anode substrate by using an evaporation process: sequentially stacking and evaporating the first doped barrier layer, the potential well layer and the second doped barrier layer; the first doped barrier layer and The material of the second doping barrier layer is a crystalline organic material doped into a low HOMO energy level material, and the doping mass percentage of the cry...

Embodiment 1

[0040] The structure of the organic electroluminescent device of the present embodiment is:

[0041] ITO glass / (CuPc:UGH2 / NPB / CuPc:UGH2) 2 / Alq 3 / TPBi / Cs 2 CO 3 / Ag; the period number of the quantum well is 2.

[0042] The preparation process of the organic electroluminescent device is as follows:

[0043] 1. First, photolithographically process the ITO layer of the conductive anode layer of the ITO glass, and cut it into the required size; then use detergent, deionized water, acetone, ethanol, and isopropanol to ultrasonically clean for 15 minutes each to remove the glass surface. of organic pollutants;

[0044] 2. Perform oxygen plasma treatment on the conductive anode layer ITO of ITO glass, the treatment time is 10min, and the power is 30W;

[0045] 3. Using the evaporation process, the doped quantum well is prepared by evaporation, and the structure is (CuPc:UGH2 / NPB / CuPc:UGH2) 2 , where, in the first and second doped barrier layers (CuPc:UGH2), the doping ratio o...

Embodiment 2

[0049] The structure of the organic electroluminescent device of the present embodiment is:

[0050] IZO glass / (ZnPc:UGH1 / TCTA / ZnPc:UGH1) 1 / ADN / TAZ / CsF / Al; the period number of the quantum well is 1.

[0051] The preparation process of the organic electroluminescent device is as follows:

[0052] 1. First, photolithographically process the IZO layer of the conductive anode layer of the IZO glass, and cut it into the required size; then use detergent, deionized water, acetone, ethanol, and isopropanol to ultrasonically clean each for 15 minutes to remove the glass surface. of organic pollutants;

[0053] 2. Perform oxygen plasma treatment on the conductive anode layer IZO of IZO glass, the treatment time is 5min, and the power is 50W;

[0054] 3. Using evaporation process, doped quantum wells are prepared by evaporation on the surface of IZO, the structure is (ZnPc:UGH1 / TCTA / ZnPc:UGH1) 1 , where, in the first and second doped barrier layers (ZnPc:UGH1), the doping ratio of...

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Abstract

The invention belongs to the field of organic semiconductor materials, and discloses an organic electroluminescence device and a production method thereof. The organic electroluminescence device comprises an anode substrate, a quantum well, a luminous layer, an electronic transmission layer, an electronic injection layer and a cathode layer which are laminated sequentially. The quantum well comprises a first doped barrier layer, a potential well layer and a second doped barrier layer which are laminated sequentially; both the first doped barrier layer and the second doped barrier layer are made of crystalline organic materials doped into low-HOMO(highest occupied molecular orbital)-level materials according to the doping percentage of 5-20%. Due to the quantum well which is formed by doping the crystalline materials with the low-HOMO-level materials, the probability of recombination luminescence of holes and electrons in the quantum well is reduced effectively; due to the crystalline materials, light ray can be reflected and scattered through crystal structures of the materials, the hole and electron compound probability is increased effectively, and finally the luminous efficiency of the device is improved.

Description

technical field [0001] The invention relates to the field of organic semiconductor materials, in particular to an organic electroluminescence device and a preparation method thereof. Background technique [0002] In 1987, C.W.Tang and Van Slyke of Eastman Kodak Company in the United States reported a breakthrough in the research of organic electroluminescence. A high-brightness, high-efficiency double-layer organic electroluminescent device (OLED) has been prepared using ultra-thin film technology. In this double-layer structure device, the brightness reaches 1000cd / m at 10V 2 , its luminous efficiency is 1.51lm / W, and its lifespan is more than 100 hours. [0003] The principle of OLED light emission is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, and holes are injected from the anode to the highest occupied orbital (HOMO) of organic matter. Electrons and hol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/52
Inventor 周明杰王平黄辉张振华
Owner OCEANS KING LIGHTING SCI&TECH CO LTD