Quartz crucible and manufacturing method thereof

A technology of a quartz crucible and a manufacturing method is applied in the field of solar silicon wafers to achieve the effect of reducing the content of metal impurities and improving the service life

Inactive Publication Date: 2014-01-01
镇江荣德新能源科技有限公司
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Problems solved by technology

[0006] Technical problem to be solved: Aiming at the deficiencies of the prior art, the present invention provides a quartz crucible and its manufacturing method, which solves the problem of contact between the polycrystalline silicon ingot crystal and the quartz crucible when the polycrystalline silicon ingot crystal is directly produced by using the existing industrially produced ordinary quartz crucible. The technical problem of forming a metal impurity-rich region on the surface of

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  • Quartz crucible and manufacturing method thereof
  • Quartz crucible and manufacturing method thereof

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Embodiment Construction

[0023] The ordinary quartz crucible produced in traditional industrialization is taken as the ordinary quartz crucible body of the present invention, and its inner surface is coated with a high-purity quartz sand coating with a quartz sand purity greater than 99.99% and an iron concentration lower than 3PPM.

[0024] The specific manufacturing steps are: perform the following steps in order to manufacture the quartz crucible of the present invention:

[0025] Step 1: Add 4 times its weight of pure water to the molten high-purity quartz sand with a purity of more than 99.99%, an iron concentration of less than 3PPM, and a particle size of 300-600 mesh, and fully stir to form a slurry. The stirring time is more than 24 hours , and pay attention to keep it clean without bringing in impurities, otherwise it will affect the quality of the high-purity quartz sand coating after sintering.

[0026] Step 2: Leave the slurry stirred in step 1 to stand for 8 minutes. After the quartz san...

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Abstract

The invention discloses a quartz crucible and a manufacturing method of the quartz crucible. A glass sand coating coats the inner surface of a common quartz crucible body and plays a role in shielding between the common quartz crucible body and polycrystalline silicon ingot crystals, the speed of metal impurities diffusing toward the polycrystalline silicon ingot crystals in the common quartz crucible body is reduced, then the content of the metal impurities in the polycrystalline silicon ingot crystals is reduced, and therefore the purpose of improving service life of a non-equilibrium minority carrier is achieved. On the basis of the manufacturing method, the number of unqualified parts of the bottom surface and the side faces in the manufactured qualified polycrystalline silicon ingot crystals is reduced, the usage rate is improved, and production cost is reduced.

Description

technical field [0001] The invention relates to the field of solar silicon wafers, in particular to a quartz crucible for containing polycrystalline silicon ingots and a manufacturing method thereof. Background technique [0002] Crystalline silicon solar cell is a new type of power generation material made on the substrate of crystalline silicon wafers through a series of processes such as making PN junctions, among which crystalline silicon wafers are the basic material of solar cells. According to the different internal structures of crystals, crystalline silicon wafers are divided into polycrystalline silicon wafers and single crystal silicon wafers, which are cut from polycrystalline silicon ingot crystals and single crystal silicon ingot crystals respectively. [0003] Among them, the polycrystalline silicon ingot crystal is formed after firing in a polycrystalline ingot furnace: specifically, the polycrystalline silicon raw material is loaded into a quartz crucible co...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/04C30B29/06
Inventor 孟涛姚玖洪路景刚余刚
Owner 镇江荣德新能源科技有限公司
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