Unlock instant, AI-driven research and patent intelligence for your innovation.

High-speed global shutter image sensor pixel and method for sampling pixel signals thereof

An image sensor and global shutter technology, applied in image communication, color TV parts, TV system parts, etc., can solve the problem of inability to perform double sampling, achieve short frame transfer time, simple pixel structure, and eliminate KTC noise effect

Active Publication Date: 2014-01-01
GPIXEL
View PDF5 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantage is that it cannot perform correlated double sampling to remove KTC (reset) noise

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-speed global shutter image sensor pixel and method for sampling pixel signals thereof
  • High-speed global shutter image sensor pixel and method for sampling pixel signals thereof
  • High-speed global shutter image sensor pixel and method for sampling pixel signals thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] like image 3 As shown, the high-speed global shutter image sensor pixel of the present invention includes a reset switch M1, a first buffer amplifier AMP1, a first sampling capacitor C1, a correction switch M2, a second buffer amplifier AMP2, a sampling switch SAMPLE, a second sampling capacitor C2, and a second sampling capacitor C2. Three buffer amplifiers AMP3, row selection switch READ; the first buffer amplifier AMP1 is composed of the first source follower M3 and the first current source load M4, and the second buffer amplifier AMP2 is composed of the second source follower M5 and the second The current source load M6 constitutes.

[0026] The third buffer amplifier AMP3 is composed of a third source follower M8.

[0027] The reset switch M1, the correction switch M2, the first source follower M3, the first current source load M4, the second source follower M5 and the second current source load M6 all use field effect transistors; the drain of the reset switch M...

Embodiment 2

[0035] like Figure 5 As shown, the high-speed global shutter image sensor pixel of the present invention includes the reset switch M1, the first buffer amplifier AMP1, the first sampling capacitor C1, the correction switch M2, the second buffer amplifier AMP2, the sampling switch SAMPLE, and the second The sampling capacitor C2, the third buffer amplifier AMP3, and the row selection switch READ; the difference is that in this embodiment, the first buffer amplifier AMP1 adopts the first source follower M3, and the first source follower M3 is a field effect transistor , its drain is connected to the power supply voltage Vsf-pulse1; the second buffer amplifier AMP2 uses the second source follower M5, and the second source follower M5 is also a field effect transistor, and its drain is connected to the power supply voltage Vsf-pulse2; Facilitates the manufacture of smaller pixels and increases the fill factor of pixels.

[0036] Image 6 Shown is the operation timing diagram of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a high-speed global shutter image sensor pixel and a method for sampling pixel signals of the high-speed global shutter image sensor pixel. The pixel comprises a reset switch, a photodiode, a first buffer amplifier, a second buffer amplifier, a third buffer amplifier, a first sampling capacitor, a second sampling capacitor, a correction switch, a sampling switch and a row selection switch. The method includes the steps of turning off the correction switch before exposure, conducting correction on the voltage of a right node of the first sampling capacitor, turning on the reset switch, enabling the photodiode to reset, turning off the reset switch, starting the exposure, turning off the correction switch so that the reset voltage of the photodiode can be collected to a left node of the first sampling capacitor through the first buffer amplifier, during the frame transfer time, turning on the sampling switch, electric potential information of the right node of the first sampling capacitor is collected to the second sampling capacitor through the second buffer amplifier and the sampling switch to be read through the third buffer amplifier and the row selection switch, turning off the sampling switch, and completing the exposure. According to the high-speed global shutter image sensor pixel and the method for sampling the pixel signals of the high-speed global shutter image sensor pixel, KTC noise can be eliminated, the frame transfer time is short, and the structure is simple.

Description

technical field [0001] The invention belongs to the technical field of semiconductor image sensing, and relates to a high-speed global shutter image sensor pixel and a sampling method for the pixel signal thereof. Background technique [0002] When shooting fast-moving objects, you need to use a global shutter to avoid image distortion. A typical global shutter CMOS pixel such as figure 1 As shown, it consists of reset switch M1, photodiode D, buffer amplifier AMP1, sampling switch M4, sampling capacitor C1, buffer amplifier M5 and row selection switch M6. The pixel is based on the traditional 3T pixel structure. First, the reset switch is closed and the photodiode is reset. Then the reset switch M1 is turned off, and the pixel starts to be exposed. The photodiode converts the received light signal into an electrical signal. During the frame transfer time, first the sampling switch M4 is closed and the electrical signal converted by the photodiode is stored on the sampling...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H04N5/374H04N5/378H04N5/363H04N25/65
CPCH04N25/616H04N25/771
Inventor 马成王欣洋
Owner GPIXEL