Preparation method of copper nanowire arrays with porous structure and film conductivity measuring method thereof

A technology of copper nanowires and arrays, applied in the field of preparing copper nanowire arrays, can solve the problems of poor repeatability of the reaction, restrictions on large-scale production of copper nanowires, slow reaction time, etc.

Inactive Publication Date: 2014-01-15
杭州知创新材料技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation of nanowires by these chemical methods is complicated, the reaction time is slow, the reaction needs to occur at a certain temperature, and the repeatability of the reaction is poor, which limits the large-scale production of copper nanowires.

Method used

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  • Preparation method of copper nanowire arrays with porous structure and film conductivity measuring method thereof
  • Preparation method of copper nanowire arrays with porous structure and film conductivity measuring method thereof
  • Preparation method of copper nanowire arrays with porous structure and film conductivity measuring method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Magnetron sputtering apparatus: JGP-450a multi-target magnetron sputtering deposition system (Shenyang Scientific Instrument Development Center Co., Ltd., Chinese Academy of Sciences);

[0040] Substrate type: aluminum nitride;

[0041] Adjust the distance d=90mm between the sample stage 2 and the radio frequency stage 1;

[0042] Vacuumize the vacuum chamber 7 to make the vacuum degree in the vacuum chamber 7 reach 3.4×10 -4 Pa;

[0043] Turn on the heating control power supply 9, and turn on the sample rotation stage 8 to keep the substrate temperature at room temperature;

[0044] Fill the vacuum chamber 7 with argon, and adjust the air pressure to 1.5Pa;

[0045] Adjust the DC current to 110mA and the voltage to 0.30kV

[0046] Deposition time 2h;

[0047] After the preparation, turn off the DC power supply, anneal in situ for 20 minutes, and cool naturally to room temperature 25° C., then take out the aluminum nitride substrate with the copper nanowire array t...

Embodiment 2

[0050] Magnetron sputtering apparatus: JGP-450a multi-target magnetron sputtering deposition system (Shenyang Scientific Instrument Development Center Co., Ltd., Chinese Academy of Sciences)

[0051] Adjust the distance d=90mm between sample stage 2 and RF stage 1

[0052] Vacuumize the vacuum chamber 7 to make the vacuum degree in the vacuum chamber 7 reach 3.4×10 -4 Pa;

[0053] Turn on the heating control power supply 9, and turn on the sample rotation table 8, so that the substrate temperature rises to 100°C;

[0054] Rush into the vacuum chamber 7 with argon, and adjust the air pressure to 1.5Pa;

[0055] Adjust the DC current to 110mA and the voltage to 0.30kV

[0056] Deposition time 2h;

[0057] After the preparation, turn off the DC power supply, anneal in situ for 20 minutes, and cool naturally to room temperature 25° C., then take out the aluminum nitride substrate with the copper nanowire array thin film.

[0058] Adopt X-ray diffractometer to carry out phase ...

Embodiment 3

[0060] Magnetron sputtering apparatus: JGP-450a multi-target magnetron sputtering deposition system (Shenyang Scientific Instrument Development Center Co., Ltd., Chinese Academy of Sciences)

[0061] Substrate type: aluminum nitride;

[0062] Adjust the distance d=90mm between sample stage 2 and RF stage 1

[0063] Vacuumize the vacuum chamber 7 to make the vacuum degree in the vacuum chamber 7 reach 3.4×10 -4 Pa;

[0064] Turn on the heating control power supply 9, and turn on the sample rotation table 8, so that the substrate temperature rises to 200°C;

[0065] Rush into the vacuum chamber 7 with argon, and adjust the air pressure to 1.5Pa;

[0066] Adjust the DC current to 110mA and the voltage to 0.30kV

[0067] Deposition time 2h;

[0068] After the preparation, turn off the DC power supply, anneal in situ for 20 minutes, and cool naturally to room temperature 25° C., then take out the aluminum nitride substrate with the copper nanowire array thin film.

[0069] Ad...

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Abstract

The invention provides a normal temperature preparation method of copper nanowire arrays. The method comprises the following steps: putting a copper target material in a direct current platform 1 in a vacuum chamber of a magnetron sputtering instrument, placing a substrate plate on a sample platform 2, modulating the distance between the sample platform 2 and the direct current platform 1 in a range of 50 to 90 mm; vacummizing the vacuum chamber until the vacuum degree of the vacuum chamber reaches 2.0*10<-4> to 4.0*10<-4> Pa; pumping argon gas into the vacuum chamber at the room temperature, adjusting the pressure of argon gas in a range of 1.0 to 2.0 Pa; applying a direct current voltage between a negative pole, which is tightly connected to the target material and a positive pole, which is tightly connected to the back of the substrate plate (namely a DC voltage), controlling the current to be in a range of 80 to 120 mA and the voltage to be in a range of 0.25 to 0.35 kV; carrying out deposition for 1 to 7 hours, turning off the direct current power supply, in-situ annealing for 20 minutes, and naturally cooling to the room temperature of 25 DEG C so as to prepare aluminium nitride, quartz or copper substrate coated with a copper nanowire array film. The copper nanowire arrays obtained by the preparation method have a uniform structure, effectively guarantee the even distribution of nano phase, and have the advantages of simple whole deposition technical process, low cost, and easiness in industrial production.

Description

technical field [0001] The invention relates to a method for preparing a copper nanowire array on an aluminum nitride substrate by using a magnetron sputtering method at room temperature. A method for testing the electrical conductivity of a copper nanowire array film by using a four-probe method. Background technique [0002] Nanomaterials can be widely used in chemical industry, electronics, textile, light industry, military, medical and other fields, among which the most promising is the electronics industry. One-dimensional structured nanomaterials (such as nanowires, nanorods, and nanotubes, etc.) are currently a hot topic in nanomaterials research. One-dimensional metal nanomaterials are a good combination of the characteristics of one-dimensional nanomaterials and metals themselves, and also have excellent physical and chemical properties. At present, one-dimensional metal nanomaterials have attracted much attention because of their potential applications in ultra-h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C23C14/35G01R27/02
Inventor 邓元曹丽莉谭明祝薇叶慧红崔长伟
Owner 杭州知创新材料技术有限公司
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