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Preparation method of copper nanowire arrays with porous structure and film conductivity measuring method thereof

A technology of copper nanowires and arrays, applied in the field of preparing copper nanowire arrays, can solve the problems of poor repeatability of the reaction, restrictions on large-scale production of copper nanowires, slow reaction time, etc.

Inactive Publication Date: 2014-01-15
杭州知创新材料技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation of nanowires by these chemical methods is complicated, the reaction time is slow, the reaction needs to occur at a certain temperature, and the repeatability of the reaction is poor, which limits the large-scale production of copper nanowires.

Method used

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  • Preparation method of copper nanowire arrays with porous structure and film conductivity measuring method thereof
  • Preparation method of copper nanowire arrays with porous structure and film conductivity measuring method thereof
  • Preparation method of copper nanowire arrays with porous structure and film conductivity measuring method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Magnetron sputtering apparatus: JGP-450a multi-target magnetron sputtering deposition system (Shenyang Scientific Instrument Development Center Co., Ltd., Chinese Academy of Sciences);

[0040] Substrate type: aluminum nitride;

[0041] Adjust the distance d=90mm between the sample stage 2 and the radio frequency stage 1;

[0042] Vacuumize the vacuum chamber 7 to make the vacuum degree in the vacuum chamber 7 reach 3.4×10 -4 Pa;

[0043] Turn on the heating control power supply 9, and turn on the sample rotation stage 8 to keep the substrate temperature at room temperature;

[0044] Fill the vacuum chamber 7 with argon, and adjust the air pressure to 1.5Pa;

[0045] Adjust the DC current to 110mA and the voltage to 0.30kV

[0046] Deposition time 2h;

[0047] After the preparation, turn off the DC power supply, anneal in situ for 20 minutes, and cool naturally to room temperature 25° C., then take out the aluminum nitride substrate with the copper nanowire array t...

Embodiment 2

[0050] Magnetron sputtering apparatus: JGP-450a multi-target magnetron sputtering deposition system (Shenyang Scientific Instrument Development Center Co., Ltd., Chinese Academy of Sciences)

[0051] Adjust the distance d=90mm between sample stage 2 and RF stage 1

[0052] Vacuumize the vacuum chamber 7 to make the vacuum degree in the vacuum chamber 7 reach 3.4×10 -4 Pa;

[0053] Turn on the heating control power supply 9, and turn on the sample rotation table 8, so that the substrate temperature rises to 100°C;

[0054] Rush into the vacuum chamber 7 with argon, and adjust the air pressure to 1.5Pa;

[0055] Adjust the DC current to 110mA and the voltage to 0.30kV

[0056] Deposition time 2h;

[0057] After the preparation, turn off the DC power supply, anneal in situ for 20 minutes, and cool naturally to room temperature 25° C., then take out the aluminum nitride substrate with the copper nanowire array thin film.

[0058] Adopt X-ray diffractometer to carry out phase ...

Embodiment 3

[0060] Magnetron sputtering apparatus: JGP-450a multi-target magnetron sputtering deposition system (Shenyang Scientific Instrument Development Center Co., Ltd., Chinese Academy of Sciences)

[0061] Substrate type: aluminum nitride;

[0062] Adjust the distance d=90mm between sample stage 2 and RF stage 1

[0063] Vacuumize the vacuum chamber 7 to make the vacuum degree in the vacuum chamber 7 reach 3.4×10 -4 Pa;

[0064] Turn on the heating control power supply 9, and turn on the sample rotation table 8, so that the substrate temperature rises to 200°C;

[0065] Rush into the vacuum chamber 7 with argon, and adjust the air pressure to 1.5Pa;

[0066] Adjust the DC current to 110mA and the voltage to 0.30kV

[0067] Deposition time 2h;

[0068] After the preparation, turn off the DC power supply, anneal in situ for 20 minutes, and cool naturally to room temperature 25° C., then take out the aluminum nitride substrate with the copper nanowire array thin film.

[0069] Ad...

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Abstract

The invention provides a normal temperature preparation method of copper nanowire arrays. The method comprises the following steps: putting a copper target material in a direct current platform 1 in a vacuum chamber of a magnetron sputtering instrument, placing a substrate plate on a sample platform 2, modulating the distance between the sample platform 2 and the direct current platform 1 in a range of 50 to 90 mm; vacummizing the vacuum chamber until the vacuum degree of the vacuum chamber reaches 2.0*10<-4> to 4.0*10<-4> Pa; pumping argon gas into the vacuum chamber at the room temperature, adjusting the pressure of argon gas in a range of 1.0 to 2.0 Pa; applying a direct current voltage between a negative pole, which is tightly connected to the target material and a positive pole, which is tightly connected to the back of the substrate plate (namely a DC voltage), controlling the current to be in a range of 80 to 120 mA and the voltage to be in a range of 0.25 to 0.35 kV; carrying out deposition for 1 to 7 hours, turning off the direct current power supply, in-situ annealing for 20 minutes, and naturally cooling to the room temperature of 25 DEG C so as to prepare aluminium nitride, quartz or copper substrate coated with a copper nanowire array film. The copper nanowire arrays obtained by the preparation method have a uniform structure, effectively guarantee the even distribution of nano phase, and have the advantages of simple whole deposition technical process, low cost, and easiness in industrial production.

Description

technical field [0001] The invention relates to a method for preparing a copper nanowire array on an aluminum nitride substrate by using a magnetron sputtering method at room temperature. A method for testing the electrical conductivity of a copper nanowire array film by using a four-probe method. Background technique [0002] Nanomaterials can be widely used in chemical industry, electronics, textile, light industry, military, medical and other fields, among which the most promising is the electronics industry. One-dimensional structured nanomaterials (such as nanowires, nanorods, and nanotubes, etc.) are currently a hot topic in nanomaterials research. One-dimensional metal nanomaterials are a good combination of the characteristics of one-dimensional nanomaterials and metals themselves, and also have excellent physical and chemical properties. At present, one-dimensional metal nanomaterials have attracted much attention because of their potential applications in ultra-h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C23C14/35G01R27/02
Inventor 邓元曹丽莉谭明祝薇叶慧红崔长伟
Owner 杭州知创新材料技术有限公司
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