Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An In-Situ Plasma Glow Treatment Method for Improving the Field Emission Properties of Tungsten Oxide Nanomaterial Thin Films

A material thin film and plasma technology, applied in discharge tubes, electrical components, circuits, etc., can solve problems such as differences in structure and physical properties, achieve simple equipment, low method cost, and improve field emission characteristics

Active Publication Date: 2016-08-03
SUN YAT SEN UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although researchers have developed some post-processing techniques that can effectively improve the field emission characteristics of carbon nanotubes, (X.H.Liangetal., Appl.Phys.Lett.88 (2006) 111501; J.G.Oketal., Appl.Phys.Lett.90 (2007) 033117; C.L.Liu, et al., Carbon47(2009) 1158.), but because carbon nanotubes and tungsten oxide nanomaterials have great differences in structure and physical properties, whether these technologies can be applied to tungsten oxide nanomaterial thin films It is still inconclusive, so the development of a post-processing technology to improve the field emission characteristics of tungsten oxide nanomaterials is of great significance to promote its application on cold cathodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An In-Situ Plasma Glow Treatment Method for Improving the Field Emission Properties of Tungsten Oxide Nanomaterial Thin Films
  • An In-Situ Plasma Glow Treatment Method for Improving the Field Emission Properties of Tungsten Oxide Nanomaterial Thin Films
  • An In-Situ Plasma Glow Treatment Method for Improving the Field Emission Properties of Tungsten Oxide Nanomaterial Thin Films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Example 1: In-situ plasma process processing a sample of tungsten oxide nanowire thin film with poor uniformity

[0035] The sample 1 of the tungsten oxide nanowire thin film with poor emission uniformity prepared by the thermal evaporation growth method was treated with an in-situ plasma process. The total area of ​​the substrate is 2.8×2.8cm 2 , The shape of the nanowire pattern is circular and the diameter is 300μm. Since there are 18 nanowire patterns in each row and column on the substrate, the total number of nanowire patterns on the substrate is 324, and the total emission area is 0.229cm 2 .

[0036] First, the patterned tungsten oxide nanowire array (sample 1, seen in figure 2 ) As the cathode of the two-pole field emission structure, it is placed in a high vacuum chamber. The anode is a phosphor screen coated with phosphor, the distance between the anode and cathode is 400μm, and the background vacuum of the system is 2.0×10 -5 Pa. From image 3 It can be found ...

Embodiment 2

[0042] Example 2: In-situ plasma process processing a sample of tungsten oxide nanowire film with poor uniformity

[0043] The in-situ plasma process was used to treat the sample 2 of the tungsten oxide nanowire thin film prepared by the thermal evaporation growth method with good emission uniformity, further verifying the feasibility of this in-situ plasma treatment process. The total area of ​​the substrate is 2.8×2.8cm 2 , The shape of the nanowire pattern is circular and the diameter is 300μm. Since there are 18 nanowire patterns in each row and column on the substrate, the total number of nanowire patterns on the substrate is 324, and the total emission area is 0.229cm 2 .

[0044] Similarly, the patterned tungsten oxide nanowire array (sample 2) was used as the cathode of the diode field emission device and placed in the high vacuum chamber. The anode is a phosphor screen coated with phosphor, the distance between the anode and cathode is 400μm, and the background vacuum of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an in-situ plasma glow treatment method for improving the field emission characteristics of a tungsten oxide nano material thin film. The method is to use the tungsten oxide nano material thin film as the cathode of the field emission structure, and place it in a high vacuum test chamber. First, a high voltage is applied between the cathode-grid or cathode-anode of the field emission structure to achieve field electron emission, and then a gas with heavy atomic mass (such as Ar) and a strongly reducing gas (such as H 2 ) successively introduced between the nanomaterial film and the anode to maintain a certain working pressure, and then use high voltage to form a plasma glow discharge. purpose of field emission characteristics. The method has the characteristics of simple equipment and cheap processing gas. The turn-on electric field and the threshold electric field of the tungsten oxide nanomaterial film processed by the method become lower, and the distribution uniformity and brightness distribution uniformity of field emission sites are effectively improved.

Description

Technical field [0001] The invention relates to an in-situ plasma glow treatment method for improving the field emission characteristics of a tungsten oxide nano material film, in particular to a plasma in-situ treatment method of inert gas with heavy atomic mass and strong reducing gas. Background technique [0002] Tungsten oxide nanomaterial is a field emission cold cathode material with application potential. To achieve cathode applications, the realization of low electric field emission and uniformity characteristics of the material is the key. Most researchers solve the problem of low electric field and uniform field emission characteristics of tungsten oxide nanomaterials from the perspective of material preparation, for example, by controlling the growth morphology of tungsten oxide nanomaterials (A.AgiralandJ.GEGardenier, J.Phys.Chem .C112 (2008) 15183), control the growth density of its nanostructures (F. Liuetal., Nanoscale 3 (2011) 1850) and so on. However, the abov...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
Inventor 刘飞许宁生莫富尧郭同义邓少芝陈军
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com