Diffusion method of pn junction and se doping at one time
A diffusion method and PN junction technology are applied in the semiconductor field to achieve the effects of realizing continuous production, improving diffusion effect and reducing production cost.
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Embodiment 1
[0030] Such as figure 1 and figure 2 , this embodiment is a one-time diffusion process for the SE region and the PN junction region for silicon solar cells. The diffused object is a P-type single crystal or polycrystalline silicon wafer, and a special screen printing phosphor paste is used. The screen has figure 1 the graph shown. Among them, the part of the solid line is the SE area, and the graph of this area is a straight line, including thick lines above the order of millimeters and thin lines and borders of several microns to tens of microns perpendicular to the thick lines. The thick lines can be designed to be continuous or partially interrupted (The middle is connected in series), hollowed out, etc., the number of lines is two to more, the thin line part must be continuous, the number of lines is tens to hundreds, the border can be continuous or serpentine, and the width is consistent with the thin line; 2 is The PN junction area is composed of blank or several dis...
Embodiment 2
[0032] Such as figure 1 , figure 2 and image 3 , This embodiment is a one-time diffusion process for silicon solar cells with SE and PN junctions. The object to be diffused is a P-type single crystal or polycrystalline silicon chip, and the silicon chip has undergone a secondary coating process, and the screen pattern is as described in Example 1. The first coating is to print SE graphics on the surface of the silicon wafer by screen printing. The slurry used is phosphorous slurry, and then the silicon wafer is transported by the roller to the next spraying device, and the spraying device sprays a certain proportion of phosphoric acid. On the front surface of the silicon wafer, that is, covering the SE and PN regions, it is then transported horizontally by the roller table into a high-temperature furnace for high-temperature treatment. Since the SE region already has phosphorous slurry under the phosphoric acid, the final sheet resistance of the SE region reaches 20Ω·cm, ...
Embodiment 3
[0034] Such as figure 1 , figure 2 and image 3 , This embodiment is a one-time diffusion process for silicon solar cells with SE and PN junctions. The object to be diffused is a P-type single crystal or polycrystalline silicon chip, and the silicon chip has undergone a secondary coating process, and the screen pattern is as described in Example 1. The first coating is to spray SE graphics on the surface of the silicon wafer through a laser spraying device. The slurry used is phosphorous slurry. After drying at 200 ° C, the silicon wafer is transported by the roller to the next spraying device. The spraying device Spray a certain proportion of phosphoric acid on the front surface of the silicon wafer, that is, cover the SE and PN areas, and then spread it horizontally into the drying furnace and high-temperature furnace under the transmission of the roller table. Since the SE region already has phosphorous slurry under the phosphoric acid, the final sheet resistance of the...
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