Unlock instant, AI-driven research and patent intelligence for your innovation.

sio 2 /al Stress Adjustment Technology of Bi-material Composite Beam

A stress adjustment, composite beam technology, applied in metal material coating process, process for producing decorative surface effects, decorative arts, etc., can solve the distorted infrared chip imaging effect, the CCD detector cannot receive or receive reflections signal and other problems to achieve the effect of improving image quality

Active Publication Date: 2016-08-03
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This leads to the fact that the CCD detector on the optical axis cannot receive or receive the reflection signal of part of the reflector
As a result, the imaging effect of the infrared chip is severely distorted

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • sio <sub>2</sub> /al Stress Adjustment Technology of Bi-material Composite Beam
  • sio <sub>2</sub> /al Stress Adjustment Technology of Bi-material Composite Beam
  • sio <sub>2</sub> /al Stress Adjustment Technology of Bi-material Composite Beam

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A deformable beam used in a fully hollowed out uncooled infrared chip is SiO 2 / Al bi-material composite beam stress adjustment process, including the following steps:

[0030] ① Deposit a layer of SiO2 layer 2 with a thickness of 500 nanometers on the surface of bulk silicon 1 by using a deposition process. figure 1 shown;

[0031] ②Using ion implantation phosphorus process, the implantation energy is 15keV, the dose is 5e 14 cm-2, as attached figure 2 shown;

[0032] ③Adopt the furnace tube annealing process, the temperature is 800°C, and the time is 2h;

[0033] ④ Using evaporation or sputtering process, in SiO 2 Al film 3 with a thickness of 300 nm is formed on the surface of the layer, as attached image 3 shown;

[0034] ⑤Adopt the deposition process to deposit an amorphous silicon layer 4 with a thickness of 200 nanometers on the surface of the Al film, as attached Figure 4 .

[0035] ⑥ Using XeF 2 dry release process, the SiO 2 The amorphous silicon...

Embodiment 2

[0039] A deformable beam used in a fully hollowed out uncooled infrared chip is SiO 2 / Al bi-material composite beam stress adjustment process, including the following steps:

[0040] ① Deposit a layer of SiO2 layer 2 with a thickness of 400 nanometers on the surface of bulk silicon 1 by using a deposition process. figure 1 shown;

[0041] ②Using ion implantation phosphorus process, the implantation energy is 14keV, the dose is 5e 13 cm-2, as attached figure 2 shown;

[0042] ③Adopt the furnace tube annealing process, the temperature is 600°C, and the time is 1h;

[0043] ④ Using evaporation or sputtering process, in SiO 2 Al film 3 with a thickness of 200 nm is formed on the surface of the layer, as attached image 3 shown;

[0044] ⑤Adopt the deposition process to deposit an amorphous silicon layer 4 with a thickness of 250 nanometers on the surface of the Al film, as attached Figure 4 .

[0045] ⑥ Using XeF 2 dry release process, the SiO 2 The amorphous silicon...

Embodiment 3

[0049] A deformable beam used in a fully hollowed out uncooled infrared chip is SiO 2 / Al bi-material composite beam stress adjustment process, including the following steps:

[0050] ① Deposit a layer of SiO2 layer 2 with a thickness of 600 nm on the surface of bulk silicon 1 by using a deposition process. figure 1 shown;

[0051] ②Using ion implantation phosphorus process, the implantation energy is 16keV, the dose is 5e 15 cm-2, as attached figure 2 shown;

[0052] ③Adopt the furnace tube annealing process, the temperature is 900°C, and the time is 1h;

[0053] ④ Using evaporation or sputtering process, in SiO 2 Al film 3 with a thickness of 250 nm is formed on the surface of the layer, as attached image 3 shown;

[0054] ⑤Adopt the deposition process to deposit an amorphous silicon layer 4 with a thickness of 300 nanometers on the surface of the Al film, as attached Figure 4 .

[0055] ⑥ Using XeF 2 dry release process, the SiO 2 The amorphous silicon layer 4 a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a SiO 2 The stress adjustment process of Al / Al bimaterial composite beam includes the following steps: ① Deposit a layer of SiO on the surface of a bulk silicon 2 layer; ② for the above SiO 2 The P-type impurity layer is implanted by ion implantation process; ③ Annealed by furnace tube annealing process; ④ Evaporation or sputtering process is used for SiO 2 Deposit a layer of Al film on the surface of the Al film; ⑤ deposit an amorphous silicon layer on the surface of the above Al film; 2 The amorphous silicon layer on the composite beam formed by the layer and the Al film and the bulk silicon below are removed by etching; ⑦The oven annealing process is used for annealing treatment. This process enables the SiO 2 The residual stress of the / Al composite beam is adjusted, so that the radius of curvature of the composite beam is increased, and the angle of the reflector is small, thereby improving the SiO 2 / Al is the imaging quality of the uncooled infrared chip of the deformed beam. At the same time, the parameters of the process can be appropriately adjusted according to the application of the device to control the tension or compression stress of the composite beam.

Description

technical field [0001] The invention belongs to the field of microelectromechanical system processing, in particular, relates to a SiO 2 Stress adjustment process of / Al bimaterial composite beams. Background technique [0002] in SiO 2 In the fully hollow uncooled infrared chip where / Al is a deformed composite beam, due to the SiO 2 It is very difficult to match the stress of Al / Al, which causes the radius of curvature of the deformed composite beam to be small after the infrared chip is hollowed out, and the bending is serious, which leads to a large inclination angle of the reflector. Therefore, when the optical system is performing an imaging test, when the incident light is irradiated on the reflector, it will seriously deviate from the optical axis after being reflected by the reflector. In this way, the CCD detector on the optical main axis cannot receive or receive the reflection signal of part of the reflector. As a result, the imaging effect of the infrared ch...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 李志刚尚海平焦斌斌卢狄克孔延梅刘瑞文陈大鹏
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI