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Photoresist stripping agent containing fluorine-containing surfactant

A photoresist stripper and surfactant technology, applied in the field of positive photoresist, can solve the problems of inability to remove photoresist, limit the life of photoresist stripper bath, and high evaporation rate, so as to improve the ability to remove photoresist and efficiency, temperature reduction, low evaporation rate effect

Inactive Publication Date: 2014-03-12
THE CHEMOURS CO FC LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] In addition, because the components of many known photoresist strippers are highly volatile, they are prone to high evaporation rates, thereby limiting the bath life of these photoresist strippers, and during their storage and use, Special precautions for human and environmental safety are required
[0011] However, photoresist strippers of simple composition available so far cannot completely remove photoresist from various substrates.

Method used

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  • Photoresist stripping agent containing fluorine-containing surfactant
  • Photoresist stripping agent containing fluorine-containing surfactant
  • Photoresist stripping agent containing fluorine-containing surfactant

Examples

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Embodiment

[0080] Material:

[0081] Monoethanolamine (MEA): purchased from oriental union chemical corp.

[0082] N, N-Dimethylacetamide (DMAc): purchased from JiangShan Chemical Co. Ltd. (JiangShan Chemical Co. Ltd.).

[0083] Fluorosurfactant (FS): Use a non-ionic fluorosurfactant supplied by E.I. DuPont, which is a polyoxyethylene compound substituted by fluorinated fatty alcohol. The trade name is FS-3100.

[0084] Positive photoresist: model Echem TM120SL, purchased from eChem Solutions Corp.

[0085] Water: Use deionized water.

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Abstract

The invention discloses a photoresist stripping agent. The photoresist stripping agent comprises, by weight percent based on the total weight of the photoresist stripping agent, (a) 40 to 80wt% of monoethanolamine, (b) 18 to 58wt% of N,N-dimethyl acetamide , and (c) 0.001 to 2wt% of a fluorine-containing surfactant. The photoresist stripping agent and water are mutually soluble; and the photoresist stripping agent possesses no corrosivity on electronic building bricks taking aluminium or aluminium alloy as line materials, and less toxicity on the environment. In addition, the invention also discloses a method used for removing photoresists using the photoresist stripping agent.

Description

technical field [0001] The present invention relates to a photoresist stripper containing an alkylolamine, an alkylamide and a fluorosurfactant, in particular to the removal of Positive photoresist. Background technique [0002] The technology industry continues to develop and progress, and the technology of thin film transistor liquid crystal display (TFT-LCD) is constantly evolving, and because thin film transistor liquid crystal display has small size, no space, low power consumption, low radiation, and durable products, etc. Therefore, it has gradually replaced displays made of cathode ray tubes (CRT). Moreover, as the demand for displays continues to increase, the output of thin-film transistor liquid crystal displays is gradually increasing, and following the evolution of technology generations, five-generation, six-generation, seven-generation, eighth-generation, and even ten-generation factories are constantly being built. The amount invested in thin film transisto...

Claims

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Application Information

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IPC IPC(8): G03F7/42
Inventor 李豪浚李泰城吴富其方旭强
Owner THE CHEMOURS CO FC LLC
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