Device and process for a silicate phosphor and its surface-coated oxide diaphragm film
A surface coating, phosphor technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of difficult production process control, high temperature control requirements, high equipment requirements, etc.
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Embodiment 1
[0040] Select purchased Intermex orange phosphor powder 054465g as a sample, undeposited sample, denoted as 0#, deposit in a 4-inch model atomic layer deposition equipment, select a layer of phosphor deposition chamber, and deposit aluminum oxide diaphragm on the phosphor surface Thin film 30nm.
[0041] Put 5g of phosphor powder 05446 into the above-mentioned phosphor deposition chamber, then put the phosphor deposition chamber into the cavity, and proceed to the next step;
[0042] Turn on the carrier gas and pulse gas of the atomic layer deposition equipment, and set parameters: the chamber substrate temperature is set to 150°C, the chamber wall temperature is set to 180°C, the pulse actuator valve temperature is set to 160°C, and the precursor trimethylaluminum container The temperature is room temperature, the temperature of the precursor water container is set to 50°C, and the temperature of other pipelines is 150°C. The deposition process selects the precursor exposure...
Embodiment 2
[0046] Select purchased Intermex orange phosphor powder 054465g as a sample, undeposited sample, denoted as 0#, deposit in a 4-inch model atomic layer deposition equipment, select a layer of phosphor deposition chamber, and deposit aluminum oxide diaphragm on the phosphor surface Thin film 50nm.
[0047] Put 5g of phosphor powder 05446 into the above-mentioned phosphor deposition chamber, then put the phosphor deposition chamber into the cavity, and proceed to the next step;
[0048] Turn on the carrier gas and pulse gas of the atomic layer deposition equipment, and set parameters: the chamber substrate temperature is set to 150°C, the chamber wall temperature is set to 180°C, the pulse actuator valve temperature is set to 160°C, and the precursor trimethylaluminum container The temperature is room temperature, the temperature of the precursor water container is set to 50°C, and the temperature of other pipelines is 150°C. The deposition process selects the precursor exposure...
Embodiment 3
[0052] Select the purchased Intermex orange phosphor powder 055445g as the sample, the undeposited sample is denoted as 3#, deposit it in a 4-inch model atomic layer deposition equipment, select a layer of phosphor deposition chamber, and deposit aluminum oxide diaphragm on the phosphor surface Thin film 30nm.
[0053] Put 5g of phosphor powder 05544 into the above-mentioned phosphor deposition chamber, then put the phosphor deposition chamber into the cavity, and proceed to the next step;
[0054] Turn on the carrier gas and pulse gas of the atomic layer deposition equipment, and set parameters: the chamber substrate temperature is set to 150°C, the chamber wall temperature is set to 180°C, the pulse actuator valve temperature is set to 160°C, and the precursor trimethylaluminum container The temperature is room temperature, the temperature of the precursor water container is set to 50°C, and the temperature of other pipelines is 150°C. The deposition process selects the pre...
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