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Insulated gate bipolar transistor at non-complete emitter region and preparation method thereof

A bipolar transistor and insulated gate technology, which is applied in the field of preparation of insulated gate bipolar transistors, can solve the problems of small on-state voltage drop and increase the difficulty of device manufacturing, and achieve the effect of improving the application range

Inactive Publication Date: 2014-03-26
朱江
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Generally speaking, from the front structure of the IGBT, the IGBT can be divided into two types: planar type and trench gate type; from the breakdown characteristics of the IGBT, it can be divided into two types: the punch-through type and the non-punch-through type. The P+ surface on the back of the device has an N+ buffer layer, and its on-state voltage drop is smaller than that of the non-punch-through type, and the punch-through type device also increases the difficulty of manufacturing the device

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  • Insulated gate bipolar transistor at non-complete emitter region and preparation method thereof
  • Insulated gate bipolar transistor at non-complete emitter region and preparation method thereof

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Embodiment 1

[0012] figure 1 It is a cross-sectional view of an insulated gate bipolar transistor with a non-complete emitter region of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0013] An insulated gate bipolar transistor, comprising: N+ buffer layer 2, which is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 5E13cm -3 ~1E16cm -3 , with a thickness of 30um; the back P+ emitter region 1 is a P-conduction type semiconductor silicon material, and the back of the N+ buffer layer 2 is evenly distributed, with a width and spacing of 5um, a depth of 5um, and a boron atom surface doping concentration of 5E18cm -3 ; N-base region 3, located on the N+ buffer layer 2, is a semiconductor silicon material of N conductivity type, with a thickness of 200um and a doping concentration of phosphorus atoms of 5E13cm -3 ; P-type base region 4, located on the N-b...

Embodiment 2

[0021] figure 2 It is the sectional view of the second incomplete emitter region of the present invention insulated gate bipolar transistor, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0022] An insulated gate bipolar transistor, comprising: N+ buffer layer 2, which is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 5E13cm -3 ~1E17cm -3 , with a thickness of 30um; the back P+ emitter region 1 is a P-conduction type semiconductor silicon material, and the back of the N+ buffer layer 2 is evenly distributed, the width and spacing are 5um, the thickness is 5um, and the doping concentration of boron atoms on the surface is 5E18cm -3 ; N-base region 3, located on the N+ buffer layer 2, is a semiconductor silicon material of N conductivity type, with a thickness of 200um and a doping concentration of phosphorus atoms of 5E13cm -3 ; P-type base region 4, loca...

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Abstract

The invention discloses an insulated gate bipolar transistor at a non-complete emitter region. The back part region of a device is set as a P + emitter region by the insulated gate bipolar transistor disclosed by the invention, opening and conduction of the P + emitter region are automatically adjusted by a current when the device is conducted, the hole injection efficiency of an N-type base region by a back P+ emitter region is adjusted, and a high frequency characteristic application range of the device is improved. The invention further provides a preparation method of the insulated gate bipolar transistor at the non-complete emitter region.

Description

technical field [0001] The invention relates to an insulated gate bipolar transistor with a non-complete emission region, and also relates to a preparation method of the insulated gate bipolar transistor with a non-complete emission region. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a combination of gate voltage control characteristics of metal oxide semiconductor field effect transistor (MOSFET) and low on-resistance characteristics of bipolar transistor (BJT). Semiconductor power devices have the characteristics of voltage control, large input impedance, low driving power, small on-resistance, low switching loss and high operating frequency. They are ideal semiconductor power switching devices and have broad development and application prospects. [0003] Generally speaking, from the front structure of the IGBT, the IGBT can be divided into two types: planar type and trench gate type; from the breakdown characteristics of the IGBT, it can be ...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/7397H01L29/0804H01L29/36H01L29/66348
Inventor 朱江
Owner 朱江