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Linear plasma-enhanced chemical vapor deposition system with remote magnetic-mirror field constraint

A plasma-enhanced chemical technology, applied in the field of ion and thin-film material science research, can solve problems such as unfavorable continuous operation of coating, achieve the effect of improving feasibility and flexibility, reducing development difficulty, and continuous deposition

Active Publication Date: 2014-04-02
INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This structure greatly reduces the development difficulty of high-performance plasma deposition thin film equipment, but there is a skin effect when depositing certain semiconductors or doped semiconductors, which is not conducive to the continuous operation of the coating

Method used

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  • Linear plasma-enhanced chemical vapor deposition system with remote magnetic-mirror field constraint
  • Linear plasma-enhanced chemical vapor deposition system with remote magnetic-mirror field constraint
  • Linear plasma-enhanced chemical vapor deposition system with remote magnetic-mirror field constraint

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Embodiment

[0024] Such as figure 1 and figure 2 As shown, the remote magnetic mirror confined linear plasma enhanced chemical vapor deposition system includes inlet pipes 1 and 3 connected to the gas source, a coaxial circular waveguide 2 connected to the coaxial microwave source, and a "convex" shaped non-magnetic stainless steel A vacuum chamber 11, a rectangular deposition chamber door 4, an observation window 7, a built-in heating and biasing substrate table 5, a vacuum unit 6, and a magnetic field assembly composed of permanent magnets 8, 9, 10. In this remote magnetic mirror confined linear plasma enhanced chemical vapor deposition system, mechanical pump-molecular pump cascade vacuum unit 6 is used for vacuuming, and the background vacuum can reach 10 -4 Pa level. The working gas used for deposition enters the vacuum chamber through the upper inlet pipe 1 and the lower inlet pipe 3, wherein the inert gas and the reducing gas pass through the inlet pipe 1, and the reactive precu...

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Abstract

The invention discloses a linear plasma-enhanced chemical vapor deposition system with a remote magnetic-mirror field constraint. The linear plasma-enhanced chemical vapor deposition system comprises a deposition chamber, wherein the deposition chamber is divided into a plasma generation region and a material surface treatment region; a permanent magnet is arranged at each of the top end and two sides of the deposition chamber; upper and lower gas inlet pipes and a coaxial circular waveguide connected with a coaxial microwave source are arranged inside the plasma generation region of the deposition chamber; a substrate table is arranged inside the material surface treatment region of the deposition chamber; a vacuum unit is arranged at the bottom of the deposition chamber; the coaxial circular waveguide is utilized to stimulate a working gas to generate linear microwave plasma inside the deposition chamber under the condition of the linear magnetic-mirror field constraint generated by permanent magnet components; and the introduced working gas forms a film on the substrate surface of the substrate table under the effect of the linear microwave plasma. By adopting the linear plasma-enhanced chemical vapor deposition system, the large-size uniform deposition of a semiconductor film and a doped semiconductor film can be realized, fast and continuous deposition of the film is realized by remotely introducing a reaction gas, and industrial continuous production is easily realized.

Description

technical field [0001] The invention belongs to the scientific research field of plasma and thin film materials, and in particular relates to a remote magnetic mirror-constrained linear plasma-enhanced chemical vapor deposition system. Background technique [0002] Low-temperature plasma-enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) is applied in large-scale integrated circuits, solar thin-film photovoltaic cells, flat panel displays, material surface modification, functional group grafting, and fuel cell ion exchange membranes. With the rapid development of the industry, there is an urgent need for a low-temperature plasma generation technology that can produce high deposition / etch rates, large-area uniformity, and stability. In order to achieve a breakthrough in this technology, experts in the plasma industry at home and abroad have made unremitting efforts and adopted many methods: First, use more superior plasma discharge excitatio...

Claims

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Application Information

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IPC IPC(8): C23C16/513C23C16/54
Inventor 陈龙威左潇魏钰孟月东王祥科
Owner INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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