A Nanowire Arrangement and Positioning Method Based on Ridge Electrode Structure
A technology of electrode structure and positioning method, applied in microstructure technology, microstructure device, manufacturing microstructure device, etc., can solve problems such as expensive, damaged nanowires, breakdown, etc.
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example 1
[0042] First, a layer of SiO is oxidized on the surface of the silicon substrate 1 2 Thin layer, by photolithography, etching process on the surface of the silicon substrate to prepare thin strips of SiO 2 thin layer as a mask 6( Figure 6 ); Next, anisotropic wet etching ( Figure 8 a and Figure 8 Shown in b), the ridge structure 2 is prepared on the silicon substrate 1 ( figure 1 a and figure 1 as shown in b);
[0043] Secondly, by photolithography and coating process, two strip electrodes 3 are respectively prepared at the two ends of the ridge structure 2 ( figure 2 a and figure 2 Shown in b); Then on the substrate 1 that has prepared ridge structure 2 and electrode, spin coating colloid 4 thin layers ( image 3 a and image 3 as shown in b);
[0044] Finally, the solution containing GaAs nanowires 5 is dropped on the surface of the substrate 1; since the electric field intensity at the tip is the largest, the AC electric field force applied on the electrodes m...
example 2
[0046] First, grow a layer of SiN on the surface of GaAs substrate 1 x Thin layer, by photolithography, etching process on the surface of the substrate 1 to prepare thin strips of SiN x thin layer as a mask 6( Figure 6 ); Next, wet etching ( Figure 7 a and Figure 7 Shown in b), the ridge structure 2 is prepared on the silicon substrate 1 ( figure 1 a and figure 1 as shown in b);
[0047] Secondly, by photolithography and coating process, two strip electrodes 3 are respectively prepared at the two ends of the ridge structure 2 ( figure 2 a and figure 2 shown in b); then cover the colloid on the substrate with ridge structure and electrode ( image 3 a and image 3 as shown in b);
[0048] Finally, the solution containing GaN nanowires 5 is dropped on the surface of the substrate 1; since the electric field intensity at the tip is the largest, the electric field force applied on the two electrodes makes the nanowires 5 positioned on the top of the ridge electrode (...
example 3
[0050] First, grow a layer of SiO on the surface of the silicon substrate 2 Thin layer, prepare two slender strips of SiO on the surface of silicon substrate 1 by photolithography and etching process 2 thin layer as a mask 6( Figure 6 ); Next, anisotropic wet etching ( Figure 8 a and Figure 8 As shown in b), prepare two sections of ridge structures 2 on the silicon substrate 1 ( Figure 9 a and Figure 9 as shown in b);
[0051] Secondly, by photolithography and coating process, two strip electrodes 3 are respectively prepared on the two sections of ridge structures; then the substrate with ridge structures 2 and electrodes 3 is covered with colloid ( Figure 9 a and Figure 9 as shown in b);
[0052] Finally, the solution containing InAs nanowires 5 is dropped on the surface of the substrate 1; since the electric field intensity at the tip of the ridge structure 2 is the largest, the electric field force applied on the two electrodes makes the nanowires positioned o...
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