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Preparation technology for graphene nanosheet thin film

A technology of nano-chips and preparation process, which is applied in the field of preparation technology of graphene nano-chips with two-dimensional highly ordered arrangement to form films, can solve the problem of low order degree of graphene nano-chips, high process requirements and difficulty in production. Industrial application and other issues, to achieve the effect of simple and easy process, simple process and low production cost

Active Publication Date: 2014-04-09
青岛科孚纳米技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires a high-temperature heat treatment of up to 3000°C after the chemical reaction. The process is complicated, there is certain environmental pollution, and the cost is high, so it is difficult to achieve large-scale industrial application.
[0006] It can be seen that the graphene nano-microsheet film produced by the preparation process of the above invention patent has a low degree of order, high process requirements, large loss of materials, and extremely high energy consumption.

Method used

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  • Preparation technology for graphene nanosheet thin film
  • Preparation technology for graphene nanosheet thin film
  • Preparation technology for graphene nanosheet thin film

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Experimental program
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Effect test

Embodiment 1

[0052] 1. Preparation of graphene dispersion solution: Distilled water, isopropanol (IPA), N,N-dimethylformamide (DMF) according to the volume ratio of isopropanol:N,N-dimethylformamide is 1: 2-1:10, the volume ratio of isopropanol and N,N-dimethylformamide:distilled water is 1:1-3:1 to prepare a graphene dispersion solution, and use ammonia water, acetic acid, dilute hydrochloric acid, hydrogen One or more of sodium oxide solution and tetramethylamine to adjust the pH value between 6 and 11;

[0053] 2. Add an appropriate amount of graphene nano-chip powder to the prepared dispersion solvent to form a mixed slurry;

[0054] 3. Ultrasonic treatment of the mixed slurry (ultrasonic frequency not lower than 28KHZ, ultrasonic power not lower than 200W), ultrasonic dispersion time not less than 30 minutes;

[0055] 4. Add an appropriate amount of boric acid (H 3 BO 3 ), continue ultrasound for no less than 30 minutes;

[0056] Five, the obtained graphene dispersion slurry is pr...

Embodiment 2

[0060] 1. Prepare graphene dispersion solution: Distilled water, isopropanol (IPA), N-methylpyrrolidone, according to the volume ratio of isopropanol:N-methylpyrrolidone is 1:2-1:10, isopropanol and N-Methylpyrrolidone: The volume ratio of distilled water is 1:1-3:1 to prepare a graphene dispersion solution, and adjust the pH value to 6 to 6 with one or more of ammonia water, acetic acid and tetramethylamine Between 11;

[0061] 2. Add an appropriate amount of graphene nano-chip powder to the prepared dispersion solvent to form a mixed slurry;

[0062] 3. Ultrasonic treatment of the mixed slurry (ultrasonic frequency not lower than 28KHZ, ultrasonic power not lower than 200W), ultrasonic dispersion time not less than 30 minutes;

[0063] 4. Add an appropriate amount of boric acid organic derivatives (BR) with a planar molecular structure into the mixed slurry 3 ), continue ultrasound for no less than 30 minutes;

[0064] Five, the obtained graphene dispersion slurry is prep...

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Abstract

The invention discloses a preparation technology for a graphene nanosheet thin film. According to the preparation technology for the graphene nanosheet thin film, the dispersion property of a graphene nanosheet is improved in water and a normal-temperature organic solvent by a molecule self-assembling technology; a two-dimensional sheet can be stretched and not folded; therefore, the two-dimensional arrangement order degree of the graphene nanosheet is increased. The technical method is low in energy consumption, green and environmentally friendly, simple, low in production cost and favorable for implementation of industrial production. The graphene film prepared by the technology disclosed by the invention is high in heat conduction characteristics; the heat conduction coefficient ranges from 500 to 1,300w / mk; the graphene film has a large application prospect in the field of electronic device heat dissipation and can be thinned to 500nm.

Description

technical field [0001] The invention belongs to the field of preparation of graphene functional materials, and in particular relates to a preparation process for realizing two-dimensional highly ordered arrangement of graphene nano-chips into a film by using molecular self-assembly technology. Background technique [0002] Graphene is the core functional material of this century, and its physical properties are anisotropic. In a two-dimensional crystal structure, it shows excellent chemical stability, electrical conductivity, high thermal conductivity, high specific surface area, and mechanical properties characterized by thinness, softness, and strength, etc. Its industrial application prospect is broad, and it will bring about a leap in the material industry in the 21st century. [0003] Due to the two-dimensional crystal structure of graphene, in the preparation process of graphene nano-flake films, the orderly arrangement between the flakes is very important. Because t...

Claims

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Application Information

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IPC IPC(8): C01B31/04B82Y30/00B82Y40/00C01B32/184
Inventor 萧小月徐燕
Owner 青岛科孚纳米技术有限公司
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