Preparation method for copper indium gallium diselenide thin film

A copper indium gallium selenide thin film technology, applied in the field of preparation of copper indium gallium selenide thin film, can solve the problems of small grain size, poor quality of copper indium gallium selenide thin film, short film growth time, etc.

Active Publication Date: 2014-04-09
SHENZHEN INST OF ADVANCED TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, if the deposition rate is simply increased, due to the short film growth time, the grains cannot be fully grown, the grain size is small, and the grain boundaries increase; and the random orientation (112) increases, and the surface roughne

Method used

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  • Preparation method for copper indium gallium diselenide thin film
  • Preparation method for copper indium gallium diselenide thin film
  • Preparation method for copper indium gallium diselenide thin film

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preparation example Construction

[0029] Please also see figure 2 with image 3 , the preparation method of the copper indium gallium selenide thin film of an embodiment, comprises the following steps:

[0030] Step 1 ( S110 ): in a selenium atmosphere, gallium and indium are co-evaporated, so that the selenium, gallium and indium are deposited on the substrate.

[0031] The substrate is preferably a glass substrate deposited with a back electrode layer, stainless steel foil or titanium foil, and the like.

[0032] Put the substrate and four evaporation sources of copper (Cu), indium (In), gallium (Ga) and selenium (Se) in the evaporation system, heat the substrate to the required temperature, and keep the substrate temperature constant, Selenium is evaporated to create a selenium atmosphere, gallium and indium are evaporated at the same time, and the gas atoms evaporated from the surface of the high-temperature evaporation source are deposited on the substrate with a lower temperature, so that indium, gall...

Embodiment 1

[0068] Fabrication of Copper Indium Gallium Selenium Thin Films

[0069] T1=8 minutes and 45 seconds; T3=1 minute and 15 seconds; T1:T3=7:1

[0070] 1. Step 1: Heat the soda-lime glass substrate deposited with the back electrode layer to 350°C, maintain the substrate temperature at 350°C, and evaporate selenium at the source furnace temperature of 250°C to generate a selenium atmosphere; in the selenium atmosphere Gallium and indium were co-evaporated for 8 minutes and 45 seconds (this time is denoted as T1), so that selenium, gallium and indium were deposited on the back electrode layer of the substrate, and then the evaporation of gallium and indium was stopped. The evaporation temperature of the above-mentioned gallium is 1090°C, and the evaporation rate of gallium on the substrate surface is 2.0*10 -4 pa; the evaporation temperature of indium is 970°C, and the evaporation rate of indium on the substrate surface is 6.0*10 -4 pa;

[0071] 2. Step 2: Heating the substrate ...

Embodiment 2

[0075] Fabrication of Copper Indium Gallium Selenium Thin Films

[0076] T1=8 minutes and 35 seconds; T3=1 minute and 25 seconds; T1:T3=6:1

[0077] 1. Step 1: Heating the soda-lime glass substrate deposited with the back electrode layer to 350°C, and maintaining the substrate at 350°C, evaporating selenium at 250°C to generate a selenium atmosphere, co-evaporating gallium and indium in the selenium atmosphere For 8 minutes and 35 seconds (this time is denoted as T1), selenium, gallium and indium were deposited on the back electrode layer of the substrate, and then the evaporation of gallium and indium was stopped. Among them, the evaporation temperature of gallium is 1090°C, and the evaporation rate of gallium is 2.0*10 -4 pa; the evaporation temperature of indium is 970°C, and the evaporation rate of indium is 6.0*10 -4 pa;

[0078] 2. Step 2: Heating the substrate from 350°C to 590°C within 5 minutes, and maintaining the substrate at 590°C, evaporating copper in a selenium...

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Abstract

The invention relates to a preparation method for a copper indium gallium diselenide thin film. The preparation method for the copper indium gallium diselenide thin film comprises the steps of 1, co-evaporating gallium and indium in a selenium atmosphere to enable the selenium, the gallium and the indium to be deposited on a substrate; 2, heating the substrate, and evaporating copper in the selenium atmosphere to enable the selenium and the copper to be deposited on the substrate; 3, preserving the temperature of the substrate, and co-evaporating the gallium and the indium in the selenium atmosphere to form the copper indium gallium diselenide thin film. A ratio of the co-evaporating time in the step 1 to the co-evaporating time in the step 3 is (5:1)-(7:1). By virtue of rising of the evaporating temperature of the hot gallium and the indium, acceleration of thin film deposition and setting of the ratio relation between the evaporation amount in the step 1 and the evaporation amount in the step 3, the much indium can enter the thin film, and the gallium content of the surface of the thin film can be increased; therefore, the gradient distribution of all the elements can be obviously improved, defects on the surface of the copper indium gallium diselenide thin film can be reduced, the quality of the copper indium gallium diselenide thin film can be improved, and the energy consumption is reduced.

Description

technical field [0001] The invention relates to the technical field of photovoltaic device preparation, in particular to a method for preparing a copper indium gallium selenide thin film. Background technique [0002] In the laboratory of scientists, the co-evaporation process is currently the most widely used and efficient method for preparing copper indium gallium selenide (CIGS) thin film solar cells. The world record of 20.4% photoelectric conversion rate is established by the Swiss Federal Materials Testing and Development achieved by the co-evaporation method. The basic principle of the co-evaporation method is to place four evaporation source targets of copper (Cu), indium (In), gallium (Ga), and selenium (Se) in a vacuum chamber. When the target is heated to the surface with target molecules When detached from the evaporation source, deposition will occur on the substrate, and the target molecules on the substrate will react with each other, finally forming a CIGS c...

Claims

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Application Information

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IPC IPC(8): C23C14/24C23C14/06H01L31/18
CPCY02P70/50
Inventor 熊治雨肖旭东杨春雷
Owner SHENZHEN INST OF ADVANCED TECH
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