Compound semiconductor device and method of manufacturing the same
A semiconductor and compound technology, applied in the field of compound semiconductor devices and its manufacturing, can solve problems such as current collapse
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no. 1 approach ）
[0025] In the present embodiment, an AlGaN / GaN HEMT as a compound semiconductor device is disclosed.
[0026] Figure 2A to Figure 2C to Figure 5A to Figure 5B is a schematic sectional view showing the method of manufacturing the AlGaN / GaN HEMT according to the first embodiment in order of steps.
[0027] First, if Figure 2A As shown, a compound semiconductor laminated structure 2 is formed on, for example, a semi-insulating SiC substrate 1 as a growth substrate. As the growth substrate, a Si substrate, a sapphire substrate, a GaAs substrate, a GaN substrate, or the like can be used instead of the SiC substrate. The conductivity of the substrate can be semi-insulating or conductive.
[0028] The compound semiconductor stacked structure 2 includes a buffer layer 2a, an electron transit layer 2b, an intermediate layer 2c, and an electron supply layer 2d.
[0029] In the completed AlGaN / GaN HEMT, a two-dimensional electron gas (2DEG) is generated near the interface of the ...
no. 2 approach ）
[0072] This embodiment discloses a structure and a method of manufacturing a Schottky-type AlGaN / GaN HEMT as in the first embodiment, but differs from the first embodiment in that an interlayer insulating film is formed with more layers. Note that the same constituent elements and the like as those of the first embodiment will be denoted by the same reference numerals, and a detailed description thereof will be omitted.
[0073] Figure 6A to Figure 6C as well as Figure 7A to Figure 7C is a schematic sectional view showing main steps of the method of manufacturing the AlGaN / GaN HEMT according to the second embodiment.
[0074] First, execute the same as the first embodiment's Figure 2A to Figure 5A Same steps. exist Figure 6A The appearance at that time is shown in . exist Figure 6A In this case, the first insulating film 8a, the second insulating film 8b, and the third insulating film 8c are formed as a plurality of layers as a part of the interlayer insulating film. ...
no. 3 approach ）
[0106] The present embodiment discloses a power supply device including the AlGaN / GaN HEMT according to the first embodiment or the second embodiment.
[0107] Figure 10 is a connection diagram showing a schematic configuration of a power supply device according to a third embodiment.
[0108]The power supply device according to the present embodiment includes a high-voltage primary circuit 21 , a low-voltage secondary circuit 22 , and a transformer 23 interposed between the primary circuit 21 and the secondary circuit 22 .
[0109] The primary side circuit 21 includes an AC power source 24 , a so-called bridge rectification circuit 25 , and a plurality (here, four) of switching elements 26 a , 26 b , 26 c , and 26 d. Furthermore, the bridge rectifier circuit 25 has a switching element 26e.
[0110] The secondary side circuit 22 includes a plurality (here, three) of switching elements 27 a , 27 b , and 27 c .
[0111] In the present embodiment, the switching elements 26a, ...
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Abstract
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