Compound semiconductor device and manufacturing method thereof
A semiconductor and compound technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of no developed current, reduced output current, collapse, etc.
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no. 1 example ）
[0024] In this embodiment, an AlGaN / GaN HEMT of a nitride semiconductor is disclosed as a compound semiconductor device.
[0025] Figure 1A to Figure 1C to Figure 3A and Figure 3B is a schematic cross-sectional view illustrating the method of manufacturing the AlGaN / GaN HEMT according to the first embodiment in the order of processing.
[0026] First, if Figure 1A As shown, a compound semiconductor layered structure 2 is formed on, for example, a semi-insulating SiC substrate 1 as a growth substrate. A Si substrate, a sapphire substrate, a GaAs substrate, a GaN substrate, or the like may be used as the growth substrate instead of the SiC substrate. The conductivity of the substrate can be semi-insulating or conductive.
[0027] The compound semiconductor layered structure 2 includes a buffer layer 2a, an electron transport layer 2b, an intermediate layer 2c, and an electron supply layer 2d.
[0028] In the compound semiconductor layered structure 2 , a two-dimensional...
no. 2 example ）
[0093] This embodiment discloses the structure and method of manufacturing a Schottky-type AlGaN / GaN HEMT like the first embodiment, but differs from the first embodiment in that the formation state of the first protective insulating film is different. Note that the same constituent elements and the like as in the first embodiment are denoted by the same reference numerals, and a detailed description thereof is omitted.
[0094] Figure 6A to Figure 6C as well as Figure 7A and Figure 7B is a cross-sectional schematic diagram illustrating main processes in the method of manufacturing the AlGaN / GaN HEMT according to the second embodiment.
[0095] First, proceed with the first example Figure 1A to Figure 2A The processing is the same as that of . Figure 6A Illustrated what it looks like at this point.
[0096] Subsequently, if Figure 6B As shown, gate electrode 4 and field plate electrode 5 are formed, and the surface layer of first protective insulating film 3 is etc...
no. 3 example ）
[0157] The present embodiment discloses a power supply device to which one type of AlGaN / GaN HEMT selected from the AlGaN / GaN HEMTs of the first and second embodiments and modified examples thereof is applied.
[0158] Figure 13 is a connection diagram illustrating a schematic configuration of a power supply device according to the third embodiment.
[0159] The power supply device according to the present embodiment includes a high-voltage primary-side circuit 21 , a low-voltage secondary-side circuit 22 , and a transformer 23 interposed between the primary-side circuit 21 and the secondary-side circuit 22 .
[0160] The primary-side circuit 21 includes an AC (Alternating Current) power source 24 , a so-called bridge rectifier circuit 25 , and a plurality of (here, four) switching elements 26 a , 26 b , 26 c , and 26 d . Furthermore, the bridge rectifier circuit 25 has a switching element 26e.
[0161] The secondary side circuit 22 includes a plurality of (here, three) swi...
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Abstract
Description
Claims
Application Information
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