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Sputtering thin film forming apparatus

A sputtering thin film and antenna configuration technology, which is applied in the field of sputtering thin film forming devices, can solve the problems of reduced film forming speed, reduced plasma density, and difficulty in forming oxide films, and achieves the effect of increasing density and film forming speed

Active Publication Date: 2014-04-30
ELECTRO-MOTIVE DIESEL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the plasma density decreases, and the film formation speed on the substrate is significantly reduced
Therefore, it is difficult to form an oxide thin film at high speed in the conventional parallel plate type sputtering thin film forming apparatus or magnetron sputtering thin film forming apparatus.

Method used

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  • Sputtering thin film forming apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1）

[0046] use figure 1 and figure 2 , the sputtering thin film forming apparatus 10 of the first embodiment will be described. This sputtering thin film forming apparatus 10 is an apparatus that sputters a rectangular plate-shaped target T using plasma to form a predetermined thin film on the surface of a substrate S. As shown in FIG.

[0047] The sputtering thin film forming apparatus 10 has a vacuum container 11, which can make the inside vacuum by using a vacuum pump (not shown); a plasma generating gas introduction part 19, which is used to introduce plasma generating gas into the vacuum container; magnetron sputtering Shooting magnet 12, it is arranged on the bottom of vacuum container 11 as shown in the following; High-frequency antenna 13, it is arranged on the bottom of vacuum container 11 as shown in later; Target base 14, it is arranged on magnetron sputtering the upper surface of the magnet 12; and the substrate holder 15, which is disposed opposite to the target ho...

Embodiment 2）

[0062] use image 3 , the sputtering thin film forming apparatus 20 of the second embodiment will be described. The sputtering thin film forming apparatus 20 of this embodiment is an apparatus for sputtering a rectangular target corresponding to the shape of the substrate in order to form a thin film on the rectangular substrate. In this sputtering thin film forming apparatus 20 , the upper surface of the magnet 12A for magnetron sputtering and the target holder 14A are also rectangular to correspond to the rectangular target. 182 A of radio-frequency antenna arrangement|positioning chambers are provided in both sides of the long side of the magnet 12A for magnetron sputtering, and have the shape extended along the long side direction. A rectangle corresponding to the shape of the high-frequency antenna arrangement chamber 182A is used for the dielectric window 183A. In 182 A of radio-frequency antenna arrangement rooms, a plurality of (in this example, 4 per room) radio-fre...

Embodiment 3）

[0066] use Figure 5 , the sputtering thin film forming apparatus 30 of the third embodiment will be described. In the sputtering thin film forming apparatus 30 of the present embodiment, an exhaust pipe 186 for making the inside of the high-frequency antenna arrangement chamber 182A vacuum is provided in the cover 185A instead of the sputtering thin film forming apparatus 10 of the first embodiment. Dielectric system fill material 184 . Therefore, since the high-frequency antenna arrangement chamber 182A is also vacuumed in addition to the internal space 113 of the vacuum container 11 , it is possible to more efficiently generate a high-frequency induction electric field in the internal space 113 . In addition, since there is no pressure difference between the front and rear sides of the dielectric window 183, the mechanical strength of the dielectric window 183 does not become a problem, and the thickness of the dielectric window 183 can be reduced, and the protection of th...

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Abstract

Provided is a sputtering thin film forming apparatus, which has high film-forming speed, and can form a thin film having high qualities. A sputtering apparatus (10) is provided with: a target holder (14) that is provided in a vacuum container (11); a substrate holder (15) that is provided to face the target holder (14); a means (19) that introduces a plasma generating gas into the vacuum container (11); a means (161) that generates an electrical field for sputtering, said electrical field being in a region that includes a surface of a target (T); a high-frequency antenna disposing chamber (182), which is provided between an inner surface and outer surface of a wall of the vacuum container (11), and is partitioned from the inside of the vacuum container by means of a dielectric material window (183); and a high-frequency antenna (13), which is disposed inside of the high-frequency antenna disposing chamber (182), and generates a high-frequency induction field in the region that includes the surface of the target held by means of the target holding means.

Description

technical field [0001] The present invention relates to a sputtering thin film forming device which forms a predetermined thin film on the surface of a substrate by sputtering a target using plasma. Background technique [0002] Conventionally, a parallel-plate type sputtering thin-film forming apparatus in which a metal sputtering target (cathode) is arranged facing a substrate in a vacuum vessel has been commonly used. In this device, an inert gas such as argon gas is introduced into a vacuum container, and a DC voltage or a high-frequency voltage is applied to a target to generate a vertical electric field on the surface of the target, thereby generating discharge plasma near the target. The target is sputtered with ions in the plasma generated in this way, and a desired thin film is formed on the surface of the substrate. [0003] However, in this parallel plate type sputtering thin film forming apparatus, the sputtering rate cannot be sufficiently high. When the elect...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/35H05H1/46
CPCH01J37/3411H01J37/3408C23C14/358C23C14/3471H01J37/321H01J37/3211H01J37/3417
Inventor 节原裕一江部明宪
Owner ELECTRO-MOTIVE DIESEL
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