Manufacturing method of substrate structure used for III-V group nitride growth

Abstract

The invention provides a manufacturing method of a substrate structure used for III-V group nitride growth. The manufacturing method comprises the following steps that (1) a buffer layer growth of a subsequent luminous epitaxial structure is formed on the surface of a growing substrate; (2) an SiO2 layer is formed on the surface of the buffer layer; (3) a plurality of SiO2 protrusions which are arranged at intervals are etched on the SiO2 layer through the inductive coupling plasma etching technology, and SiO2 base layers with a preset thickness are kept between the SiO2 protrusions; (4) the SiO2 base layers are etched by the adoption of the wet etching technology until the parts, located between the SiO2 protrusions, of the buffer layer are exposed out. According to the manufacturing method, a BN material layer or an AlN layer or an AlxGal-xN layer with a hexagonal lattice structure is manufactured first to serve as the buffer layer for growth of the luminous epitaxial structure, the SiO2 protrusions are manufactured through the two-step etching method, and the parts, located below the SiO2 protrusions, of the buffer layer can be well protected. The buffer layer and the SiO2 protrusions can guarantee the quality of crystals with grown luminous epitaxial structures and can also improve the light emitting efficiency of a light-emitting diode.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a method for manufacturing a substrate structure used for growing III-V nitrides. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-V compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semic...

AI Technical Summary

Problems solved by technology

However, for sapphire substrates with raised structures, direct deposition of GaN light-emitting epitaxial structures often brings huge crystal defects, which seriously affects the brightness of light-emitting diodes. H was performed on the surface of the sapphire substrate with the raised structure left and right 2 Reduction treatment, and then the reaction source is introduced, and a low-temperature GaN layer is deposited on the surface of the sapphire substrate by low-temperature chemical vapor deposition, and then the reaction source is stopped, and the temperature is raised to about 1050°C to make the layer of low-temperature GaN layer on the sapphire substrate. Reorganize on the platform on the bottom surface to form the nucleation site of the GaN-based light-emitting epitaxial structure, and finally start to deposit the GaN-based light-emitting epitaxial structure to complete the preparation of the subsequent light-emitting diodes

[0004] For the above light-emitting diode preparation method, multiple steps are required to form the nucleation site of the GaN-based light-emitting epitaxial structure. The raised structure also has great restrictions on the improvement of the light output rate of the LED

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