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Method for preparing Te-N co-doped zinc oxide thin film through atomic layer deposition

An atomic layer deposition, zinc oxide thin film technology, applied in chemical instruments and methods, coatings, gaseous chemical plating and other directions, can solve the problem of less preparation, achieve the effect of simple method and promote the formation of p-type conductivity

Inactive Publication Date: 2014-06-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

ALD technology is a deposition technology that can precisely control the thickness and doping level of thin film deposition at the atomic level, but the use of ALD technology to realize the preparation of Te-N co-doped ZnO thin films is less studied

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  • Method for preparing Te-N co-doped zinc oxide thin film through atomic layer deposition

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Embodiment Construction

[0018] see figure 1 , a method for preparing a Te-N co-doped p-type zinc oxide film provided in an embodiment of the present invention, comprising: treating a silicon substrate or a glass substrate with concentrated sulfuric acid hydrogen peroxide, and then ultrasonically cleaning with ultrapure water, N 2 Blow dry, wherein concentrated sulfuric acid:hydrogen peroxide=4:1. Put the substrate into the atomic layer deposition chamber, turn on the atomic layer deposition equipment, adjust the working parameters, vacuumize and heat the bottom to achieve various working environments required for the experiment; conduct multiple groups of Te-N co-doped zinc oxide thin films Composite deposition, namely Zn(C 2 h 5 ) 2 / N 2 / plasma N 2 / N 2 / Te(CH 3 ) 2 / N 2 / H 2 O / N 2 =0.75s / 50s / 5s / 50s / 0.07s / 50s / 0.08s / 50s / . Wherein the flow of nitrogen is 1sccm-1000sccm, preferably 15sccm, Zn(C 2 h 5 ) 2 The air intake time is 0.04s-5s, preferably 0.75s, the cleaning time is 5s-150s, pr...

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Abstract

The invention discloses a method for preparing a Te-N co-doped zinc oxide thin film through atomic layer deposition. The method comprises the steps: carrying out cleaning treatment and surface pretreatment of a substrate; placing the substrate in a reaction chamber of an atomic layer deposition device; heating the substrate, a pipeline and the chamber; and then successively respectively carrying out zinc source deposition, N doping source deposition, Te doping source deposition and oxygen source deposition. According to the method for preparing the Te-N co-doped zinc oxide thin film through the atomic layer deposition, the Te-N co-doped zinc oxide thin film is grown through the ALD layer-by-layer cyclic growth mode; moreover, the method is simple, and with utilization of the characteristic of single-layer cyclic growth of the atomic layer deposition, uniform doping in a whole thin film structure is achieved during the zinc oxide thin film growth process; and the zinc oxide thin film after co-doping is in favor of promoting formation of p-type electric conductance.

Description

technical field [0001] The invention relates to the technical field of preparation of zinc oxide thin films, in particular to a method for preparing Te-N co-doped zinc oxide thin films by atomic layer deposition. Background technique [0002] Zinc oxide, as a new type II-VI compound with direct bandgap and wide bandgap, is one of the third-generation semiconductor materials. It has a large room temperature bandgap of 3.37eV, and the free exciton binding energy is as high as 60meV. are getting more and more attention. Compared with other wide-bandgap semiconductor materials, ZnO film has low growth temperature, good radiation resistance, low threshold power of stimulated radiation and high energy conversion efficiency. The key basic materials for high and new technologies to continue to develop after the 12th Five-Year Plan. [0003] To make ZnO-based optoelectronic devices, such as light-emitting diodes, laser diodes, etc., it is necessary to prepare n-type and p-type ZnO ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/44H01L21/205C30B25/02
Inventor 卢维尔夏洋李超波董亚斌李楠
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI