NP-type CMOS avalanche photodiode with deep N-trap

An avalanche photoelectric, NP-type technology, applied in the field of photoelectric detection, can solve the problems of NP-type APD device speed, response frequency, low bandwidth, slow diffusion speed, etc., and achieve fast diffusion speed, increased diffusion speed, and improved response speed Effect

Active Publication Date: 2014-06-25
CHONGQING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the slow diffusion motion, the rate, response

Method used

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  • NP-type CMOS avalanche photodiode with deep N-trap
  • NP-type CMOS avalanche photodiode with deep N-trap
  • NP-type CMOS avalanche photodiode with deep N-trap

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Embodiment Construction

[0019] A non-limiting embodiment is given below in conjunction with the accompanying drawings to further illustrate the present invention.

[0020] have to be aware of is, Figure 1 and Figure three Represents only a schematic simplified view of a CMOS APD, therefore the two figures are not drawn to scale.

[0021] Such as Figure 1 Shown is the structural diagram of a conventional NP-type CMOS APD optoelectronic device. A conventional NP-type CMOS APD includes a substrate 11 (typically made of Si material), an avalanche region 12 (typically made of PN structure, the P-type semiconductor is made of boron-doped Si material, and the N-type semiconductor is made of phosphorus Doped Si material), P-type contact 13 (typically, composed of heavily P-doped Si material), N-type contact 14 (typically, composed of heavily N-doped Si material), STI15 (also known as Shallow trench isolation, typically made of SIO2 material), electrode 16 (typically made of Al material). It should be...

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Abstract

The invention discloses an NP-type CMOS avalanche photodiode with a deep N-trap. The NP-type CMOS avalanche photodiode comprises a P-type substrate, an N-trap layer and an avalanche area. The N-trap layer and the avalanche area are arranged on the P-type substrate, the avalanche area is arranged between the P-type substrate and the N-trap layer to form a PN junction, a light absorbing layer is further arranged between the P-type substrate and the avalanche area, the light absorbing layer is the deep N-trap arranged on the P-type substrate, and the dosage concentration of the deep N-trap is larger than that of the P-type substrate. By means of the NP-type CMOS avalanche photodiode, the rate, the frequency response and bandwidth of avalanche photodiode devices are improved.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, to the structure of a photoelectric device, in particular to a deep N-well NP-type CMOS avalanche photodiode. Background technique [0002] Avalanche photodiode, also known as APD (avalanche photodiode), works on the principle that the photogenerated carriers (hole-electron pairs) generated by the photoelectric effect are rapidly accelerated when moving in the high electric field region (reverse voltage on the PN junction) , One or more collisions may occur during the movement, and secondary and tertiary new hole-electron pairs are generated through the impact ionization effect, resulting in an avalanche multiplication effect, which rapidly increases the number of carriers, thereby forming a relatively large optical signal current. In terms of low light intensity, high sensitivity and high speed applications, APD devices are very attractive. For example, long-distance optical comm...

Claims

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Application Information

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IPC IPC(8): H01L31/107H01L31/0352
CPCH01L31/035272H01L31/107
Inventor 王巍王川颜琳淑胡洁王婷杜超雨王振袁军
Owner CHONGQING UNIV OF POSTS & TELECOMM
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