Unlock instant, AI-driven research and patent intelligence for your innovation.

A heat sink for p-down packaging of semiconductor lasers and method of making the same

A laser and semiconductor technology, applied in the direction of semiconductor lasers, lasers, laser parts, etc., can solve the problem of difficult p-side-down packaging, and achieve the effects of easy integration, low thermal resistance, and extended life

Active Publication Date: 2016-06-01
BEIJING PEONY ELECTRONICS GROUP CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a heat sink for p-side-down packaging of semiconductor lasers and its manufacturing method, which is used to solve the difficulty in realizing p-side-down due to the existence of the p-electrode separation structure in the prior art. encapsulation problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A heat sink for p-down packaging of semiconductor lasers and method of making the same
  • A heat sink for p-down packaging of semiconductor lasers and method of making the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The specific implementation process of embodiment one includes:

[0035] Step 1, prepare the base material layer 1, and grow the upper metal layer 2 and the lower metal layer 3 respectively on the upper and lower surfaces of the base material layer 1, and the side of the base material layer 1 is not coated with a metal layer, so as to ensure that the upper metal layer 2 and the lower metal layer There is an open circuit between the metal layers 3.

[0036] Step 2, preparing an insulating isolation groove, and separating the upper metal layer 2 into independent first positive electrode 4, second positive electrode 5 and negative electrode 6 through the insulating isolation groove;

[0037] Step 3, solder layer 8 is plated on the first positive electrode 4 and the second positive electrode 5, the first positive electrode 4 is connected with the ridge waveguide region of the semiconductor laser 7 through the solder layer 8, and the second positive electrode 5 is passed thr...

Embodiment 2

[0040] The second embodiment is based on the first embodiment, specifically a method of packaging the p-side down of a GaAs-based p-electrode separation semiconductor laser chip. It uses silicon nitride ceramics as the material of the base material layer, and the size of the base material layer is 5.5mm×4.5mm×1mm, and the upper metal layer and the lower metal layer use titanium gold, titanium platinum gold or gold germanium nickel with a total thickness of 1um. Gold, and use the solder layer of gold-tin material to sinter the p-electrode separation semiconductor laser chip p-side down on the heat sink. The implementation process mainly includes the following steps:

[0041] Step A, using the method of magnetron sputtering, sputtering titanium gold, titanium platinum gold or gold germanium nickel gold with a thickness of 1um on the upper and lower surfaces of the silicon nitride ceramic base material layer as the metal layer, and the side of the base material layer is not plated...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a heat sink used for downward encapsulation of the p side of a semiconductor laser unit. The heat sink comprises a basis material layer, an upper metal layer and a lower metal layer, wherein the upper metal layer and the lower metal layer are grown on the upper surface of the basis material layer and on the lower surface of the basis material layer respectively, the upper metal layer is divided into a first positive electrode, a second positive electrode and a negative electrode which are independent of one another by insulation and isolation layers, the first positive electrode is used for providing electric signals needed by working of a ridged waveguide area of the semiconductor laser unit, the second positive electrode is used for providing electric signals needed by working of a conical gain area of the semiconductor laser unit, and the negative electrode is connected with the electrode on the n side of the semiconductor laser unit. By the adoption of the heat sink, downward encapsulation of the p side of the semiconductor laser unit provided with a p electrode separated structure can be achieved easily, electric signals can be injected into the separated p electrode independently, the radiating capacity of the semiconductor laser unit is improved, the service life of the semiconductor laser unit is prolonged, and the laser unit is made to be integrated with a system easily.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a heat sink for realizing p-side-down packaging of a semiconductor laser with a p-electrode separation structure and a method for manufacturing the heat sink. Background technique [0002] With the continuous development of science and technology, semiconductor lasers with high output power and good beam quality have very important applications in fields such as medical and health care, biological imaging, laser display, optically pumped solid-state lasers, nonlinear optics, and optical fiber communications. The end-emitting mode-locked semiconductor laser with tapered waveguide structure can provide higher output power and better beam quality, and can realize single-mode output. A tapered mode-locked semiconductor laser usually consists of two parts: a ridge-shaped waveguide region and a tapered gain region. The ridge-shaped waveguide area is used for mode filtering to achie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/024H01S5/042
Inventor 李刚张松崔碧峰徐旭红赵瑞计伟
Owner BEIJING PEONY ELECTRONICS GROUP CORP