Method and Application of Depositing High-k Gate Dielectric on Graphene Material

Abstract

Disclosed are a method for depositing a high k gate medium on a graphene material and use thereof, belonging to the field of integrated circuit techniques. In the method, firstly, a graphene material having a flat surface without defects or with less defects is selected as a substrate sample for depositing a high k medium; the substrate sample is placed in a vacuum cavity of a scanning electron microscope, which is evacuated to be in a range of 5E-4 to 1E-7, and the surface of the substrate sample is scanned using a low-energy focused electron beam for 30 s to 5 min, the low-energy electron beam having an acceleration voltage of 1-15 kV; a thin layer of an amorphous carbon thin film having a thickness in a range of 0.3 nm to 3 nm is deposited on the surface of the substrate sample in the scanning process; and the substrate sample treated by the electron beam is placed in an ALD device to be deposited with the high k medium material. In the present invention, the medium deposition can also be performed on the surface of a material without dangling bonds using the ALD to obtain a continuous, uniform and dense high-quality material, which greatly extends the applicable scope of the ALD.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a method for depositing a high-k gate dielectric on the surface of a graphene material or a device structure based on the graphene material. Background technique [0002] In the preparation process of field effect transistor (FET) and radio frequency field effect transistor (RF-FET) based on carbon nanotubes, graphene and graphene-like materials, the preparation of gate dielectric is a key process, high performance FET and RF -FET requires a high-quality, ultra-thin gate dielectric as a prerequisite. Atomic layer deposition (ALD) is the most commonly used method for depositing high-k gate dielectrics. It has the advantages of high deposition quality and precise controllable deposition thickness. ALD uses self-limiting surface chemical reactions to deposit insulating dielectric materials layer by layer on the surface of the target substrate with an atomic-...

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Problems solved by technology

[0008] (1) None of them can accurately control the specific position of graphene surface pretreatment, and can only perform overall treatment on the entire silicon wafer or the entire graphene film, which will inevitably have a certain impact on the subsequent process

[0009] (2)O 3 or NO 2 The treatment method also causes new and additional defects in graphene, so that the performance (such as: carrier mobility) is significantly reduced

[0010] (3) The buffer layer or Al seed layer will increase the overall thickness of the gate dielectric, making it difficult to meet the requirements of high-quality ultra-thin gate dielectric

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