A method for forming a gate dielectric layer on the surface of graphene and preparing a transistor

Abstract

This invention discloses a method for forming a gate dielectric on the surface of graphene and producing a field effect transistor and relates to the field of electronic device technology, wherein a large area of high quality, uniform gate dielectric layer is formed. The method comprises the following: allowing the graphene surface to absorb a hydrophilic volatile gase; placing the substrate on which graphene is formed in an ALD reaction chamber and injecting water vapor to be absorbed by the hydrophilic volatile gas on the surface of the graphene surface; raising the temperature of the ALD reaction chamber to a predetermined temperature then injecting the gate dielectric source gas to allow said vapor and gate dielectric source gas to react, producing a monolayer of a gate dielectric layer and allowing the hydrophilic volatile gas to evaporate; and repeating the process of injecting water vapor and the gate dielectric source gas into the ALD reaction chamber to form multiple monolayers of a gate dielectric layer, thereby forming a gate dielectric layer. The method is used in fabricating FETs.

Description

technical field [0001] The invention relates to the technical field of electronic components, in particular to a method for forming a gate dielectric layer on the surface of graphene and preparing field effect transistors (Field Effect Transistors, FET for short). Background technique [0002] Graphene is a two-dimensional film material formed by carbon atoms arranged in a regular hexagonal honeycomb lattice. Its unique electronic structure endows graphene with many superior and peculiar electrical properties. When the sheet-like graphene carrier concentration is n=10 12 cm -3 , the mobility can theoretically reach 200,000cm 2 V -1 the s -1 , is 140 times that of silicon materials, and the conductivity can reach 10 6 S / m is known as the next-generation electronic material that can replace silicon. [0003] Due to its excellent electrical properties, graphene is widely used in many electronic devices. Among them, the most representative electronic device is the field ...

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Problems solved by technology

[0006] However, the use of common water-based ALD methods to grow top-gate dielectric layers on the surface of graphene has the following problems: due to the hydrophobic surface of graphene, it is difficult for water molecules to adsorb on the surface of graphene, which makes it difficult to form a film or film of the grown gate dielectric Poor compactness leads to inability to insulate

However, the introduction of the seed layer in this method will, on the one hand, increase the overall thickness of the top gate dielectric layer, making it difficult to meet the requirements of an ultra-thin gate dielectric layer; on the other hand, the existence of the seed layer reduces the purity of the gate dielectric layer and increases the interface effect. The performance of graphene FETs is affected

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