Pretreatment method of selective epitaxial growth process and semiconductor device manufacturing method

Abstract

The invention provides a pretreatment method of the selective epitaxial growth process and a semiconductor device manufacturing method. The surface of a semiconductor substrate is processed through halogen-contained gas. As the halogen-contained gas has the etching performance, unsmooth defects on the surface of the semiconductor substrate can be recovered, and epitaxial growth films with fewer defects or free of defects are accordingly obtained. As halogen atoms can be bonded with semiconductor substrate silicon, the surface of the semiconductor substrate is occupied by helium atoms; meanwhile, the adsorption capacity of the helium atoms on the silicon surface is higher than the adsorption capacity of oxygen atoms, so that oxygen on the surface of the surface of the semiconductor substrate can be further removed, and surface passivation can be formed. When silicon germanium or silicon carbide is selectively grown, the halogen atoms are replaced by germanium or carbon, and the selectivity of the epitaxial growth films is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a pretreatment method of a selective epitaxial growth process and a semiconductor device manufacturing method. Background technique [0002] The development of microelectronics technology has been proceeding in two directions. One is to continuously expand the wafer size to increase chip production and reduce chip costs; requirements for modernization, high reliability and system integration. As the feature size becomes smaller and the speed of the circuit becomes faster, the interaction between the PN junction inside the device and between the device and the device through the semiconductor substrate (such as the formation of parasitic MOS transistors, etc.) is becoming more and more serious. Therefore, as the feature size of MOSFET devices shrinks to the nanometer scale, scaling down technology is facing more and more severe challenges: leakage, increased thr...

AI Technical Summary

Problems solved by technology

[0005] In actual production, it is found that since the natural oxide layer of the semiconductor substrate must be removed before the selective epitaxial growth of the film, the hydrofluoric acid solution used is relatively corrosive, and the surface of the semiconductor substrate is easily corroded, causing the surface of the semiconductor substrate to be corroded. Insufficient uniformity and flatness, so that defects 150 (such as figure 1 shown), such as bumps, pits, dislocations, etc.

The existence of defects in this selective epitaxial growth film leads to problems such as transistor structure leakage, increased threshold voltage, increased power consumption density, and mobility degradation.

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