Flexible substrate ZnS film preparation method
A flexible substrate and thin film technology, which is applied in the field of semiconductor optoelectronic thin film materials, can solve the problems of low ZnS sputtering rate and pollution of sputtering equipment, and achieve the effect of low cost, simple process and pollution reduction
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0028] Stainless steel sheets were used as flexible substrate materials, and the stainless steel sheet substrates were cleaned ultrasonically with acetone, ethanol, and deionized water, and then dried with N 2 Blow dry, and put the stainless steel sheet substrate into the magnetron sputtering vacuum chamber. Evacuate the vacuum chamber to a background vacuum of 4.0×10 -4 Pa, then high-purity Ar is introduced as the working gas, the Ar flow rate is 20ml / min, and the working pressure is adjusted to 0.5Pa through the gate valve. A single metal Zn target was used for DC magnetron sputtering, the sputtering power was 50W, the sputtering time was 300 seconds, and the substrate was not heated during the sputtering process. After the sputtering is completed, the sample is transferred to a tube furnace for vulcanization treatment. The vulcanization source material is solid sulfur powder. During the vulcanization process, no protective gas is introduced, and the tube furnace is vacuume...
Embodiment 2
[0030] Using polyimide as a flexible substrate material, the polyimide substrate was cleaned ultrasonically with acetone, ethanol, and deionized water, and then dried with N 2 Blow dry, and put the polyimide substrate into the magnetron sputtering vacuum chamber. Evacuate the vacuum chamber to a background vacuum of 4.0×10 -4 Pa, then high-purity Ar is introduced as the working gas, the Ar flow rate is 20ml / min, and the working pressure is adjusted to 0.5Pa through the gate valve. A single metal Zn target was used for DC magnetron sputtering, the sputtering power was 50W, the sputtering time was 300 seconds, and the substrate was not heated during the sputtering process. After the sputtering is completed, the sample is transferred to a tube furnace for vulcanization treatment. The vulcanization source material is solid sulfur powder. During the vulcanization process, no protective gas is introduced, and the tube furnace is vacuumed with a mechanical pump. The vulcanization te...
Embodiment 3
[0032] Using titanium foil as a flexible substrate material, the titanium foil substrate was cleaned ultrasonically with acetone, ethanol, and deionized water, and then dried with N 2 Blow dry, and put the titanium foil substrate into the magnetron sputtering vacuum chamber. Evacuate the vacuum chamber to a background vacuum of 4.0×10 -4 Pa, then high-purity Ar is introduced as the working gas, the Ar flow rate is 20ml / min, and the working pressure is adjusted to 0.5Pa through the gate valve. A single metal Zn target was used for DC magnetron sputtering, the sputtering power was 50W, the sputtering time was 300 seconds, and the substrate was not heated during the sputtering process. After the sputtering is completed, the sample is transferred to a tube furnace for vulcanization treatment. The vulcanization source material is solid sulfur powder, and N is injected during the vulcanization process. 2 As a protective gas, the vulcanization temperature is 450°C, and the vulcaniz...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More