Method for exfoliation and transfer of GaN-on-Si epitaxial layer

Abstract

The invention relates to a method for peeling and transferring silicon-based gallium nitride epitaxial layer, which comprises the following steps: 1) cleaning the silicon-based gallium nitride epitaxial wafer and the surface of the temporary carrier with hydrochloric acid, then rinsing with deionized water, and then putting the 2) Spin-coat photoresist on the front side, and paste the silicon-based GaN epitaxial wafer on the temporary carrier through the photoresist; 3) Configure the etching solution for etching the silicon substrate; 4) Bond the The final wafer is placed in an etching solution for etching; 5) Spin-coat BCB on the exposed GaN-on-Si epitaxial layer; 6) After natural cooling, the GaN-on-Si epitaxial layer on the temporary carrier and the target The front side of the substrate is bonded at a temperature of 250 degrees Celsius; 7) Remove the temporary carrier. Advantages: the method of the present invention can completely transfer the gallium nitride epitaxial layer film on the silicon-based gallium nitride epitaxial wafer to the required substrate, the process is simple, the yield is high, and the gallium nitride epitaxial layer will not damaged.

Description

technical field [0001] The invention relates to a method for stripping and transferring silicon-based gallium nitride epitaxial layers, belonging to the technical field of semiconductor technology. Background technique [0002] With the maturity of semiconductor technology, in order to give full play to the performance advantages of different semiconductor materials, the use of heterogeneous integration technology to achieve three-dimensional integration of different materials on the same wafer has become a current research hotspot. [0003] Conventional on-chip heterogeneous integration uses the method of heteroepitaxial growth. However, due to the large lattice mismatch between conventional semiconductor materials, the heteroepitaxially grown semiconductor material contains a high dislocation density, making the material The characteristics are completely degraded and the device cannot be used. Despite various remedial measures, there was little improvement. Heteroepitax...

AI Technical Summary

Problems solved by technology

Heteroepitaxial growth technology has inherent disadvantages for heterogeneous materials with large mismatches, which limits the development and application of this technology.

For example, the epitaxial layer materials of gallium nitride can only be grown on silicon carbide, gallium nitride and silicon materials at present. Due to the inherent properties of the materials themselves, they cannot be grown on other substrate materials with large lattice mismatch.

[0004] For this problem, researchers do not have a good solution at present, and can only perform heteroepitaxial growth on a limited number of semiconductor materials with small mismatches, which severely limits the development of on-chip heterogeneous integration technology.

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