On-chip array thermoelectric converter of field effect transistor and fully-automatic alignment manufacturing technology thereof

Abstract

The invention belongs to the technical field with the bulk silicon micromechanical manufacturing technology and the silicon gate automatic alignment CMOS integrated circuit technology combined and particularly relates to an on-chip array thermoelectric converter of a field effect transistor and a fully-automatic alignment manufacturing technology of the on-chip array thermoelectric converter. To solve the technical problems, the on-chip array thermoelectric converter of the field effect transistor is provided and comprises a P-type silicon substrate, silicon islands, heavy boron doped silicon layers, deep grooves, heavy boron doped silicon layers in the deep grooves, polycrystalline silicon and field region oxide layers. The two silicon islands are machined on the P-type silicon substrate, the heavy boron doped silicon layers are injected into the bottoms of the regions, corresponding to the silicon islands, of the P-type silicon substrate, the square deep grooves are formed in the peripheral edges of the P-type silicon substrate, the heavy boron doped silicon layers are injected into the deep grooves, the deep grooves are filled with the polycrystalline silicon, and the deep grooves and the silicon islands as well as the silicon islands are connected through the field region oxide layers. The on-chip array thermoelectric converter of the field effect transistor has the advantages of being high in response speed, wide in measurement frequency band, excellent in dynamic and overload characteristic and novel in structure.

Description

technical field [0001] The invention belongs to the technical field of the combination of bulk silicon micromachine manufacturing technology and silicon gate self-alignment CMOS integrated circuit technology, and specifically relates to an array thermoelectric converter on a field effect tube chip and its full self-alignment manufacturing technology. Background technique [0002] The traditional thermoelectric converter converts the electrical power to be measured generated by the product of voltage and current into Joule heat through a heating resistor. Then, the temperature change of the heating resistor is sensed by a thermocouple temperature measuring element and a voltage signal is output. This kind of thermoelectric converter has various forms, the conversion principle conforms to the original definition of electric power, the detection process has the compensation principle, and the accuracy is better than 0.1%. In this traditional thermoelectric converter, although ...

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Problems solved by technology

[0005] In order to overcome the shortcomings of the existing thermoelectric conversion mode, such as narrow frequency band, slow response speed, poor dynamic characteristics, insufficient overload capacity, complicated processing technology and high cost, the technical problem to be solved by the present invention is to provide a wide frequency band, fast response speed As well as better dynamic characteristics and overload characteristics, novel structure, simple processing technology, and low cost field effect tube-on-chip array thermoelectric converter and its fully self-aligned manufacturing process

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