A kind of aluminum/iron-doped amorphous carbon film/aluminum nano film memristor storage device and preparation method thereof

A technology of memristor and amorphous carbon film is applied in the field of memory storage, which can solve the problems of cumbersome preparation process and achieve the effects of strong repeatability, simple structure and fast reading and writing speed.

Active Publication Date: 2016-09-14
HUAIYIN TEACHERS COLLEGE
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the patented technology needs to be annealed and oxidized at high temperature for 5 hours to obtain copper oxide. The preparation process is cumbersome, and the excessive resistance of up to 100,000 ohms is formed, which is still far from practical application.

Method used

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  • A kind of aluminum/iron-doped amorphous carbon film/aluminum nano film memristor storage device and preparation method thereof
  • A kind of aluminum/iron-doped amorphous carbon film/aluminum nano film memristor storage device and preparation method thereof
  • A kind of aluminum/iron-doped amorphous carbon film/aluminum nano film memristor storage device and preparation method thereof

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Embodiment Construction

[0022] Prototypes were made according to the above-mentioned technical scheme. Take quartz glass (SiO 2 ) substrate as the substrate, the iron-doped amorphous carbon (a-C:Fe) film was prepared by the pulsed laser deposition method, and the graphite with a purity of 99.99% and the metal Fe with a purity of 99.9% were used as the target source for the coating, and the metal Fe chip was attached On the graphite target, uniform doping is achieved by the rotation of the target and the sample substrate during operation, the Fe doping amount is about 10-15%, the laser energy is 320 mJ / pulse, and the vacuum degree of the cavity is 1×10 -6 mBar, the substrate temperature is 400-600°C, the distance between the target and the substrate is 4-6 cm, anneal for 30-60 minutes after coating, and cool down to room temperature naturally. Complete the fabrication of iron-doped amorphous carbon (a-C:Fe) film.

[0023] Then use the vacuum thermal evaporation method, that is, through the control ...

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Abstract

The invention discloses an aluminum / iron-doped amorphous carbon film / aluminum nano-thin-film memory resistor storage device and a manufacturing method thereof. According to the method, a quartz glass substrate serves as a substrate, an iron-doped amorphous carbon film is prepared through a pulsed laser deposition method, then two aluminum layers are evaporated on the amorphous carbon film through a vacuum hot evaporating method to serve as electrodes, a voltage trigger is connected, and the memory resistor storage device is prepared. Under room temperature, the memory resistor storage device is in a high resistance state or a low resistance state, the resistance switching phenomenon is extremely obvious, writing can be conducted through simple pulse voltage, and reading is achieved by detecting the resistance states. The aluminum / iron-doped amorphous carbon film / aluminum nano-thin-film memory resistor storage device has the advantages of being high in writing speed and repeatability, simple in structure, stable, resistant to vibration, concise in process, free of pollution to the environment, low in raw material price, easy to recycle and the like.

Description

technical field [0001] The invention relates to memory storage technology, in particular to an aluminum / iron-doped amorphous carbon film / aluminum nano film memory resistance storage device and a preparation method thereof. technical background [0002] A memory storage device is a physical medium for storing and reading information. After integration, it can be made into unit devices such as memory, hard disk, and optical disk. According to different working principles, it can be divided into magnetic memory, electric memory and so on. Among them, magnetic memory uses ferromagnetic materials to spontaneously polarize atoms under an external magnetic field. When the external magnetic field is removed, this spontaneous polarization can continue to be maintained, thereby recording the instantaneous external field change as a data signal. Electric memory uses ferroelectric materials to spontaneously polarize atoms under an external electric field, and records the instantaneous ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 翟章印姜昱丞付浩
Owner HUAIYIN TEACHERS COLLEGE
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