Non-blocking 2 * 2 optical switching node based on embedded type silicon substrate micro-ring resonant cavities

Abstract

The invention discloses a non-blocking 2 * 2 optical switching node based on embedded type silicon substrate micro-ring resonant cavities and belongs to the technical field of optical fiber communication. The non-blocking 2 * 2 optical switching node comprises two embedded type silicon substrate micro-ring resonant cavities which are arranged in a central-symmetry mode and are made of silicon wafers on insulators, and the resonant cavities are of an S-shaped structure. Two opposite U-shaped waveguides of the embedded type silicon substrate micro-ring resonant cavities form a directional coupler in a coupling mode. The outer sides of the two U-shaped waveguides are respectively provided with a micro-ring resonator. The optical switching node comprises four input-output switching ports which form two groups. Under crossing and shoot-through states, actually-measured extinction ratios reach 44.7 dB and 38.0 dB respectively, crosstalk values are lowered to -37.5 dB and -45.2 dB respectively, and for 10 Gb / s and 12.5 Gb / s non-return-to-zero (NRZ) signals, an error-code-free node switching function can be achieved.

Description

technical field [0001] The invention relates to a device in the technical field of optical fiber communication, in particular to a non-blocking 2×2 optical switching node based on a nested silicon-based micro-ring resonant cavity. Background technique [0002] With the development of semiconductor technology, the transmission and processing speed of modern communication is constantly increasing. While the ability of multi-core processors to process information has been steadily improving, the interconnection between chips has become a huge limiting factor. The wires that connect chips, boards, and systems will struggle to keep up with Moore's Law. Traditional on-chip interconnection technology is restricted by the physical characteristics of electrical interconnection, and the improvement of physical characteristics such as delay, bandwidth, and power consumption in transmission has become a bottleneck in the improvement of communication capacity. Optical interconnect tech...

AI Technical Summary

Problems solved by technology

In practical applications, too low extinction ratio and too high crosstalk will increase the power consumption of switching nodes and reduce the quality of switched signals

Considering the conditions for large-scale on-chip integrated development, the power consumption and switching quality of a single switching node will affect the power consumption and signal quality of the entire system. The optical switching nodes in the above scheme still have further improvements and improvements in terms of extinction ratio and crosstalk performance. optimized space

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