A method for improving the electrical conductivity of graphene films

Abstract

The invention discloses a method for improving conductivity of a grapheme film. Firstly, the grapheme film attached to a substrate is processed through ozone or ultraviolet light and ozone, and then the grapheme film attached to the substrate is processed through non-metal inorganic acid. Sheet resistance of the grapheme film processed in the method can be reduced. More importantly, the sheet resistance of the grapheme film keeps stable for a long time and does not change much at high temperature. Accordingly, later patterning and other processing are facilitated, and wide application of the grapheme film in the display technology and other industrial fields with high requirements for sheet resistance and light transmittance of transparent conductive films is promoted.

Description

technical field [0001] The invention relates to a graphene film processing method, in particular to a method for improving the electrical conductivity of the graphene film. Background technique [0002] ITO (indium tin oxide) film is the most widely used transparent conductive film on the market. It is synthesized from indium oxide and tin oxide at a ratio of 9:1, and is usually deposited on hard (glass) or soft ( plastic) substrates. Although the ITO film produced according to the existing process has high conductivity and transparency, which can basically meet the technical index requirements of some electronic products, there are still many problems that are difficult to overcome: (1) ITO is highly brittle and easy to wear or appear when it is bent. (2) After ITO film formation, high temperature treatment is required to achieve high conductivity; (3) Indium in ITO is a rare earth element with limited reserves. The above technical defects plus the market's demand for lig...

AI Technical Summary

Problems solved by technology

Although the ITO film produced according to the existing process has high conductivity and transparency, which can basically meet the technical index requirements of some electronic products, there are still many problems that are difficult to overcome: (1) ITO is highly brittle and easy to wear or appear when it is bent. Cracks, shedding, etc.; (2) After ITO film formation, high temperature treatment is required to achieve high conductivity; (3) Indium in ITO is a rare earth element with limited reserves

[0004] At present, the preparation methods of graphene film mainly include mechanical exfoliation method, silicon carbide epitaxial growth method, redox method and chemical vapor deposition method. Unstable, after one day at room temperature, the square resistance will rise sharply, which will affect the subsequent patterning process and other processes. If the graphene film is stacked in multiple layers, although the square resistance can be effectively reduced, the superposition of graphene film At the same time, the transmittance of graphene films will also decrease, which limits the application of graphene films in industrial fields such as display technology that require high square resistance and light transmittance of transparent conductive films.