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Method for improving total dosage effect of anti-ionizing radiation of device

A total dose effect and anti-ionization technology, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., to achieve the effect of improving the total dose effect of anti-ionizing radiation, small packaging quality, and good shielding effect

Inactive Publication Date: 2014-08-20
XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

[0005] Low / mid-Z materials are better for proton shielding, but for a given shielding effectiveness, the material needs to be thicker, which may not be desirable for volume constraints

Method used

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  • Method for improving total dosage effect of anti-ionizing radiation of device
  • Method for improving total dosage effect of anti-ionizing radiation of device
  • Method for improving total dosage effect of anti-ionizing radiation of device

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Experimental program
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Embodiment Construction

[0032] The process of the inventive method:

[0033] 1. Using the Monte Carlo particle transport method to simulate and calculate the transmission coefficient of a single material

[0034] Theoretical simulation calculations use the Monte Carlo particle transport method. Two-dimensional TIGERP simulation calculation with ITS series program. According to the above irradiation conditions, theoretical calculation models are established for several typical materials, and 200,000 particles are tracked for each calculation. All secondary processes of electrons and the resulting secondary photons and secondary electrons are simulated and tracked in the calculation. The calculation process fully considers the photon-electron coupling process, and considers the bremsstrahlung, atom ionization to produce impact electrons and the annihilation of positron-electron pairs for the secondary events caused by electrons. For the relaxation process of atoms and electrons, the corresponding el...

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Abstract

The invention relates to a method for improving the total dosage effect of anti-ionizing radiation of a device. The method comprises the first step of manufacturing a single-layer structure composite material, the second step of manufacturing a multi-layer structure composite material, the third step of measuring transmission coefficients of an electron beam in the composite materials, the fourth step of simulating and calculating theoretical transmission coefficients of the materials based on the Monte Carlo particle transporting method, the fifth step of correcting the electronic transmission coefficients, and the sixth step of carrying out secondary packing on corresponding chips of the device through the composite materials with the best shielding effect. By means of the method, the shielding effect is best, the packing weight is minimal, and the total dosage effect of anti-ionizing radiation of the spacecraft device can be improved.

Description

technical field [0001] The invention belongs to the application of electronic technology and nuclear technology in the field of aerospace electronics, and specifically relates to a method for improving the ability of devices to resist the total dose effect of ionizing radiation by using local shielding design. Background technique [0002] The space radiation environment mainly includes cosmic rays, Van Allen Belt (Van Allen Belt), solar flares, solar electromagnetic radiation and auroral radiation. Different orbits have different radiation environments. The greatest threat to spacecraft orbiting the earth is the inner and outer Van Allen radiation belts located above the equator. They are mainly composed of high-energy protons (10-100 MeV) and high-energy electrons (0.4-7 MeV). Respectively reach 1Gy(Si) / h and tens of Gy(Si) / h. For LEO (Low Earth Orbit), the radiation dose includes electrons and protons in the capture zone, while for geosynchronous orbit, the dose is main...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/552G21F1/12
Inventor 郭红霞陈伟郭旗何承发罗尹虹文林王玲张凤祁赵雯肖尧
Owner XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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