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Perovskite-based thin film solar cell and preparation method thereof

A thin-film solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of high battery production costs, unsatisfactory photocurrent and battery efficiency of perovskite-based thin-film solar cells, and achieve strong adaptability, Low cost, cost reduction effect

Active Publication Date: 2017-12-29
深圳市华物光能技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the perovskite is filled after the carbon counter electrode layer is prepared, an additional sintering step is required for the insulating spacer layer and the carbon counter electrode layer to form the mesoporous layer in this method, which undoubtedly pushes up the production cost of the cell
In addition, the photocurrent and cell efficiency of the perovskite-based thin-film solar cells obtained in this way are not very satisfactory, and it is urgent to develop new processes to prepare perovskite-based thin-film solar cells based on carbon counter electrode layers.

Method used

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  • Perovskite-based thin film solar cell and preparation method thereof
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specific Embodiment approach

[0046] Before describing the embodiments of the present invention in detail, the battery efficiency measurement method used in the present invention will be introduced first. The photoelectric performance of the battery was measured with a computer-controlled potentiostat / galvanostat (Princeton Applied Research, Model 263A). Connect the photoanode and photocathode of the prepared solar cell device to the working electrode and the counter electrode terminal of the potentiostat / galvanostat, respectively. The light source uses a 500W xenon lamp, and the incident light intensity is 100mw / cm 2 , the illuminated area is 0.1cm 2 . Unless otherwise specified, the photoelectric performance measurements in the following examples are all carried out at room temperature.

[0047] Terms used in the present invention, unless otherwise indicated, are to be understood according to their conventional meanings in the technical field.

[0048] The inventors of the present application have fo...

Embodiment 1

[0064] The perovskite-based thin film solar cell structure in this embodiment is as follows figure 1 shown.

[0065] First, a layer of TiO was screen-printed on the FTO glass 2 thin film layer, followed by screen printing a layer of TiO 2 After the nanocrystalline layer is heated at 450° C. for 30 minutes, a dense layer 12 with a thickness of 50 nm and a porous scaffold layer 13 with a thickness of 500 nm are obtained. Subsequently, a two-step liquid phase method was used to deposit CH into the porous scaffold layer 13 3 NH 3 PB 3 light-absorbing material. First place 1.2M of PbI 2 The dimethylformamide (DMF) solution was spin-coated on the surface of the porous scaffold layer 13 at a rotational speed of 3000 rpm. After continuous spin coating for 30 seconds, it was heated at 90° C. for 2 minutes, and then the porous scaffold layer 13 was added at a concentration of 10 mg / mL. CH 3 NH 3 Soak in isopropanol solution of I for 10 minutes, and finally heat at 90°C for 45 m...

Embodiment 2

[0070] The perovskite-based thin film solar cell structure in this embodiment is as follows figure 2 shown.

[0071] First, a layer of TiO was screen-printed on the FTO glass 2 thin film layer, followed by screen printing a layer of TiO 2 After the nanocrystalline layer is heated at 450° C. for 30 minutes, a dense layer 12 with a thickness of 50 nm and a porous scaffold layer 13 with a thickness of 500 nm are obtained. Subsequently, a two-step liquid phase method was used to deposit CH into the porous scaffold layer 13 3 NH 3 PB 3 light-absorbing material. First place 1.2M of PbI 2 The DMF solution is spin-coated on the surface of the porous support layer 13 at a speed of 3000rpm, and continuously spin-coated for 30 s After that, it was heated at 90°C for 2 minutes, and then the porous scaffold layer 13 was treated with CH at a concentration of 10 mg / mL. 3 NH 3 Soak in isopropanol solution of I for 10 minutes, and finally heat at 90°C for 45 minutes. Thus, part of C...

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Abstract

The invention provides a perovskite-based thin film solar cell and a preparation method thereof. The perovskite-based thin film solar cell comprises: a transparent substrate; a transparent conductive layer formed on the transparent substrate; a dense layer formed on the transparent conductive layer and being a semiconductor material; formed on the dense layer It is a porous support layer of semiconductor material, and the pores inside the porous support layer are filled with organic metal semiconductor light-absorbing materials of perovskite structure; a capping layer; and a counter electrode layer formed on the capping layer and being a conductive carbon material. The present invention adopts carbon material as the counter electrode material, and its cost is far lower than that of noble metal counter electrode prepared by evaporation method under the condition of equivalent performance.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a perovskite-based thin film solar cell and a preparation method thereof. Background technique [0002] Traditional inorganic semiconductor solar cells have problems such as high cost and high pollution, so it is necessary to find new materials that are easy to synthesize, low cost and environmentally friendly for the third generation of thin film solar cells. Perovskite-type organometallic halide materials (such as CH 3 NH 3 wxya 3 (X=I, Br, Cl)) has attracted the attention and research interests of many researchers in recent years due to its excellent photoelectric properties and easy synthesis. Through hard work, the highest efficiency of thin-film solar cells based on this material has reached 19% in the world at present, which has great application potential. Perovskite-based thin-film solar cells mainly include three types in terms of structure: (1) porous wide-band...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K30/81Y02E10/549Y02P70/50H10K85/50
Inventor 孟庆波杨月勇肖俊彦卫会云李冬梅罗艳红吴会觉
Owner 深圳市华物光能技术有限公司