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The method of preparing a arsenic nitrogen film based on hydraulic extension technology

An indium arsenide nitrogen thin film and liquid phase epitaxy technology is applied in the field of mid-wave infrared detector materials and devices, can solve problems such as inability to prepare nitrogen-containing thin film materials, and achieves excellent crystal quality, low cost, and simple and easy preparation process. Effect

Active Publication Date: 2016-03-30
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] The object of the present invention is to provide a kind of InAs that prepares high nitrogen component based on liquid phase epitaxy technology 1-x N x The method of thin film materials solves the problem that liquid phase epitaxy technology cannot prepare InAs with high nitrogen content 1-x N x Difficulties with Thin Film Materials

Method used

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  • The method of preparing a arsenic nitrogen film based on hydraulic extension technology
  • The method of preparing a arsenic nitrogen film based on hydraulic extension technology
  • The method of preparing a arsenic nitrogen film based on hydraulic extension technology

Examples

Experimental program
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Effect test

Embodiment 1

[0023] First, put the cleaned and corroded fusion source material (7N In, non-doped InAs single wafer) into the corresponding cavity of the graphite boat, put it into the quartz tube, rapidly heat up to 650°C at 20°C / min and The temperature was kept constant for 3 hours, and the fan was turned on to rapidly lower the temperature of the melting source to room temperature to obtain the initial melting source material. Subsequently, the accurately weighed InN powder was randomly placed in the initial melting source material obtained above, and the temperature was rapidly raised to 630°C at 20°C / min and kept at a constant temperature for 2 hours to completely dissolve the InN powder, and the growth temperature was lowered to 600°C at 1°C / min. Keep the temperature constant for 15 minutes, and when the temperature begins to drop, push the boat to make the melting source contact the InAs substrate, and carry out InAs 1-x N x Growth of epitaxial thin films. The obtained epitaxial fi...

Embodiment 2

[0025] First, put the cleaned and corroded fusion source material (7N In, non-doped InAs single wafer) into the corresponding cavity of the graphite boat, put it into the quartz tube, rapidly heat up to 650°C at 20°C / min and The temperature was kept constant for 3 hours, and the fan was turned on to rapidly lower the temperature of the melting source to room temperature to obtain the initial melting source material. Subsequently, 1 / 3 of the total mass of the precisely weighed InN powder was evenly placed on the bottom of the initial melting source, and the remaining InN powder was evenly placed on the top of the initial melting source, and the temperature was rapidly raised to 630 °C at 20 °C / min and kept at a constant temperature for 1 hour. , the added InN powder is completely dissolved, 1 ℃ / min to the growth temperature of 600 ℃, constant temperature for 15 minutes, 0.3 ℃ / min when the temperature starts to drop, push the boat to make the melting source contact with the I...

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Abstract

The invention discloses a method for preparing an indium-arsenic-nitrogen film with a high-nitrogen component based on a liquid-phase epitaxy technology. According to the method, a two-time source-smelting process is carried out, wherein the first-time source-smelting is used for sufficiently melting the melting source materials In and InAs for a long time at a high temperature to obtain an initial melting source; InN powder is added during second-time source-melting, and by optimizing a placing way of the InN powder, not only are dissolved load and distribution uniformity of the InN powder in the initial melting source increased, but also the second-time high temperature source-melting time is effectively shortened, so that volatilization amount of a nitrogen element is reduced, and the InAs(1-x)Nx film material with nitrogen content of 0.66% is finally obtained. The method disclosed by the invention has the advantages of simple preparation process and low process cost; the obtained sample is high in nitrogen element content, less in crystal defects and high in crystal quality.

Description

technical field [0001] The invention belongs to the field of mid-wave infrared detector materials and devices, and specifically relates to the preparation of InAs-based indium arsenic nitrogen (InAs) with high nitrogen components by using traditional liquid phase epitaxy technology. 1-x N x ) film material. Background technique [0002] Ш-V-N compound semiconductor materials exhibit many unique properties due to the introduction of a small amount of nitrogen, such as reduced energy gap [1-2], increased electron effective mass [3] and reduced Auger recombination process [4]. These unique properties make it a potential material for the preparation of light-emitting diodes, laser light sources and wavelength-tunable detectors operating in the mid-infrared band [5-6]. The study found that at room temperature, the band gap of the InAs material is 0.36eV, and its band gap is further reduced after the introduction of nitrogen element. By adjusting the content of nitrogen element,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/38C30B19/00
Inventor 吕英飞胡淑红王洋孙常鸿邱锋俞国林戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI