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Method for preparing efficient ingot casting polycrystal

An ingot casting and high-efficiency technology, which is applied in the field of preparing high-efficiency ingot polycrystalline, can solve the problems of high crystal defect density and not being widely used, and achieve the effect of low defect density and simple process

Active Publication Date: 2014-10-08
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The appearance of the obtained crystal looks like a single crystal, but in fact, due to the internal stress concentration, the defect density in the crystal is still high, and this technology is not widely used at present

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A method for preparing high-efficiency ingot polycrystals, comprising the steps of:

[0028] 1. Use a silicon wafer with a thickness of 180 microns commonly used in the industry as a soft template; the thickness of the silicon wafer can be 180±20 microns; the silicon wafer can be a single crystal silicon wafer or a polycrystalline silicon wafer or a similar single crystal silicon wafer;

[0029] 2. Clean and remove the damaged layer on the surface of the silicon wafer (both sides); wherein, the treated liquid can be acid liquid or alkaline liquid or TMAH and other liquids, and the thickness removed on one side is 1-20 microns, and the damaged layer The surface morphology of the removed silicon wafer can be a flat plane or a pyramidal alkali texture or a pitted acid texture;

[0030] 3. Use graphene solution for spraying. The solvent for dispersing graphene is ethanol, isopropanol or deionized water. The concentration of dispersion is 0.001-0.1g / L. Residual solid conten...

Embodiment 2

[0033] A method for preparing high-efficiency ingot polycrystals, comprising the steps of:

[0034] 1. Use a silicon wafer with a thickness of 180 microns commonly used in the industry as a soft template; the thickness of the silicon wafer can be 180±20 microns; the silicon wafer can be a single crystal silicon wafer or a polycrystalline silicon wafer or a similar single crystal silicon wafer;

[0035] 2. Clean and remove the damaged layer on the surface of the silicon wafer (both sides); wherein, the treated liquid can be acid liquid or alkaline liquid or TMAH and other liquids, and the thickness removed on one side is 1-20 microns, and the damaged layer The surface morphology of the removed silicon wafer can be a flat plane or a pyramidal alkali texture or a pitted acid texture;

[0036] 3. Oxidize one side of the silicon wafer in an oxidation furnace to form a silicon oxide film with a thickness of 20 to 5000 nm; the oxidation process can be dry oxygen oxidation (the oxygen...

Embodiment 3

[0039] A method for preparing high-efficiency ingot polycrystals, comprising the steps of:

[0040] 1. Use a silicon wafer with a thickness of 180 microns commonly used in the industry as a soft template; the thickness of the silicon wafer can be 180±20 microns; the silicon wafer can be a single crystal silicon wafer or a polycrystalline silicon wafer or a similar single crystal silicon wafer;

[0041] 2. Clean and remove the damaged layer on the surface of the silicon wafer (both sides); wherein, the treated liquid can be acid liquid or alkali liquid or TMAH and other liquids, and the thickness removed on one side is 1-20 microns, and the damaged layer The surface morphology of the removed silicon wafer can be a flat plane or a pyramidal alkali texture or a pitted acid texture;

[0042] 3. Deposit a layer of silicon nitride film on one side of the silicon wafer in a PECVD deposition furnace, with a thickness of 20-5000nm; wherein, the deposition furnace can be a plate furnace...

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Abstract

The invention discloses a method for preparing efficient ingot casting polycrystal. The method comprises the steps of (a) providing a silicone sheet as a soft template; (b) cleaning two sides of the silicone sheet and removing affected layers; (c) preparing a high-melting-point silicon-containing membrane on one side of the silicone sheet, wherein the membrane is used as a hard template, the melting point of the silicon-containing membrane is higher than the melting point of silicon, and the original ordered atom arrangement on the surface of the silicon sheet is kept at the interface of the silicon-containing membrane and the silicon sheet; and (d) arranging the silicon sheet with the silicon-containing membrane at the bottom of a growing vessel upside down, and stacking silicon raw material on the side without with the silicon-containing membrane, wherein the side with the silicon-containing membrane faces the bottom of the growing vessel. The ingot casting polycrystal is induced to grow by reasonable preparation of the inducing membrane, so that low-defect-density efficient ingot casting polycrystal is obtained and the method is simple.

Description

technical field [0001] The invention relates to a method for preparing high-efficiency ingot polycrystalline, which is mainly used in the growth of ingot polycrystalline silicon in the photovoltaic field. Background technique [0002] At present, polysilicon photovoltaic cells occupy the mainstream position of silicon-based photovoltaics due to their lower cost. Reducing the defect density of ingot polysilicon and improving its crystal quality is one of the main development directions of the industry. [0003] In the traditional ingot polycrystalline crystal growth technology, the silicon melt begins to nucleate at the bottom of the crucible sprayed with silicon nitride powder and grows upward gradually. The high-temperature wettability of silicon melt to silicon nitride is very poor, and the nucleation is very uneven, resulting in different grain sizes during the crystal growth process, and no place for stress release, resulting in defects and rapid proliferation. The resul...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 熊震叶宏亮
Owner TRINA SOLAR CO LTD