Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A trithienophenyl star-shaped silicon-containing polymer and its preparation method and application

A technology of phenophenyl star and silicon polymer is applied in the field of star-shaped silicon-containing polymer and its preparation to achieve the effects of improving solubility, universality and electrical performance.

Active Publication Date: 2016-08-24
杭州奥得科技有限公司
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The Chinese patent application number 201180019788.5 discloses a polymer of benzodithiophene and its use as an organic semiconductor. The polymer in this patent is a linear polymer, and there are certain problems in solubility

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) Heat a 250ml single-necked round-bottom flask with a heating gun and pump air at the same time. After heating and pumping for 20 minutes, stop heating and pumping. After the flask is cooled, add benzo[1,2-B: 3 , 4-B': 5,6-B'] trithiophene (1.23g, 5mmol), then pump and inflate the flask (nitrogen) 10 times, add 100ml of tetrahydrofuran into the flask, and put the flask into a liquid nitrogen tank Slowly add butyl lithium solution (25mmol, 10.42 ml) dropwise to the flask after the reaction temperature is lowered to -78°C. The dropping process should be completed within 45 minutes. After rising to room temperature, react for 1 hour, add tributyltin chloride (25mmol, 6.78ml) after dropping the temperature to -78°C, remove the liquid nitrogen tank after the dropwise addition, and react for 24 hours after the temperature of the system rises to room temperature, the whole The experimental process was carried out under the protection of nitrogen, and a brown-black solution ...

Embodiment 2

[0035] (1) Heat a 250ml single-necked round-bottom flask with a heating gun and pump air at the same time. After heating and pumping for 20 minutes, stop heating and pumping. After the flask is cooled, add benzo[1,2-B: 3 , 4-B': 5,6-B'] trithiophene (1.23g, 5mmol), then pump and inflate the flask (nitrogen) 10 times, add 100ml of tetrahydrofuran into the flask, and put the flask into a liquid nitrogen tank Slowly add butyllithium solution (15mmol, 6.252ml) dropwise to the flask after lowering the reaction temperature to -50°C. The dropping process should be completed within 60 minutes. After rising to room temperature, react for 90 minutes, add tributyltin chloride (15mmol, 4.068ml) after dropping the temperature to -50°C, remove the liquid nitrogen tank after the dropwise addition, and react for 12 hours after the system temperature rises to room temperature, The whole experimental process was carried out under the protection of nitrogen, and a brown-black solution was obtain...

Embodiment 3

[0038] (1) Heat a 250ml single-necked round-bottom flask with a heating gun and pump air at the same time. After heating and pumping for 20 minutes, stop heating and pumping. After the flask is cooled, add benzo[1,2-B: 3 , 4-B': 5,6-B'] trithiophene (1.23g, 5mmol), then pump and inflate the flask (nitrogen) 10 times, add 100ml of tetrahydrofuran into the flask, and put the flask into a liquid nitrogen tank Slowly add butyllithium solution (35mmol, 14.588ml) dropwise into the flask after reducing the reaction temperature to -60°C. The dropping process should be completed within 30 minutes. After rising to room temperature, react for 30 minutes, add tributyltin chloride (35mmol, 9.492ml) after dropping the temperature to -60°C, remove the liquid nitrogen tank after the dropwise addition, and react for 36 hours after the system temperature rises to room temperature, The whole experimental process was carried out under the protection of nitrogen, and a brown-black solution was obt...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of organic semiconductor materials. In order to solve the problems of low solubility and low electrical properties of organic semiconductor materials, the invention proposes a star-shaped silicon-containing polymer with trithienoacene as the core and a preparation method thereof In terms of application and application, the trithienophenyl group introduced in the present invention has a larger coplanar π-conjugated structure, which is beneficial to expanding the range of charge delocalization, thereby facilitating obtaining higher electrical properties. In addition, the introduction of the star configuration is also beneficial to improve the solubility of the compound, thus obtaining a polymer with higher solubility. The trithienophenyl star-shaped silicon-containing polymer has a structural formula as shown in formula (I): (I).

Description

technical field [0001] The invention relates to the technical field of organic semiconductor materials, in particular to a star-shaped silicon-containing polymer and a preparation method thereof. Background technique [0002] In recent years, the development of organic semiconductor materials has been extremely rapid. Organic semiconductor materials play an important role in organic optoelectronic devices such as field effect transistors (OFETs), organic light emitting diodes (OLED), organic solar photovoltaic cells (OPV) and other organic optoelectronic devices. potential application value. [0003] Organic field-effect transistors (OFETs) are widely used in switches, smart cards, sensors, ring oscillators, etc. , flat panel display, identification labels and integrated circuits and other fields have potential applications, which has attracted great attention. After more than two decades of development, OFETs have made great progress and become one of the important electr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C08G61/12
Inventor 高建华杨成东王英峰郝望龙张海霞邹素芬谢辉
Owner 杭州奥得科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com