Technology for increasing capacity of silicon-based heterojunction solar cells

Abstract

The invention relates to a technology for increasing the capacity of silicon-based heterojunction solar cells. The technology comprises the steps that a production device, which comprises a wafer inlet chamber and a deposition chamber, of the silicon-based heterojunction solar cells is provided, and the deposition chamber is internally provided with a heater which implements heat treatment on silicon wafers; the surfaces of the silicon wafers are cleaned and dried in a wet chemical cleaning method; the silicon wafers are transmitted to the wafer inlet chamber, and vacuumizing is carried out; the silicon wafers are transmitted from the wafer inlet chamber to the deposition chamber, the internal of the deposition chamber includes a vacuum environment, and the preset temperature of the heater is greater than the technical temperature for preparing silicon-based films; and when the surface temperature of the silicon wafers is increased to the technical temperature of the silicon-based films due to heating, the silicon-based films are prepared in a chemical vapor deposition method in the deposition chamber. The technology can improve the equipment capacity and reduce the production cost while ensuring the quality of films.

Description

[0001] technical field [0002] The invention relates to the field of silicon-based heterojunction solar cells and the field of semiconductor manufacturing, in particular to a process capable of increasing the production capacity of silicon-based heterojunction solar cells. technical background [0003] At present, the common preparation of single-sided or double-sided silicon-based heterojunction solar cells requires the deposition of silicon-based or carbon-based films on silicon wafers, such as amorphous silicon films, microcrystalline silicon films, nano-silicon films, silicon oxide films, carbonized Silicon film, silicon nitride film, etc. These thin film preparation processes all include the following two steps: first, heat the silicon wafer to the process temperature (130-350°C) in vacuum, and then deposit a very thin film layer (2-20nm) on the surface of the silicon wafer under the process temperature condition . At present, people usually use two ways to complete ...

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Problems solved by technology

However, since the feeding chamber is often exposed to the atmosphere, heating here will cause some residual oxygen, water vapor and other substances to exist in the chamber, and these substances are likely to react on the surface of the silicon wafer at high temperature, affecting the passivation of the heterojunction interface. effect, which affects the efficiency of solar cells

On the other hand, when the film feeding chamber is connected to the atmosphere, the heat will be continuously transferred from the outside to the film feeding chamber, affecting its temperature environment, resulting in unstable heating environment, affecting the production yield of products and making the heating parts easy to damage

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