Treatment method for unqualified silicon wafers

A processing method and technology for silicon wafers, applied in photovoltaic power generation, electrical components, climate sustainability, etc., can solve problems such as instability, complex manufacturing process, affecting product production qualification rate, etc., to avoid waste of resources and improve production. The effect of pass rate

Active Publication Date: 2014-11-19
HAINAN YINGLI NEW ENERGY
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Problems solved by technology

Among them, due to the complex manufacturing process, before the screen printing process, that is, in the texturing-coating process, due to equipment instability or human misopera

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  • Treatment method for unqualified silicon wafers

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[0032] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0033] As mentioned in the background art, due to the complexity of the process of making solar cells, before the screen printing process, that is, in the texturing-coating process, due to the instability of the equipment or human error, a large number of These unqualified silicon wafers directly affect the production pass rate of the product.

[0034] Based on this, the embodiment of the present application provides a method for processin...

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Abstract

The invention discloses a treatment method for unqualified silicon wafers. The treatment method comprises the steps that the unqualified silicon wafers are obtained; a hydrofluoric acid solution with a preset concentration is used for soaking the unqualified silicon wafers; a surface corrosive liquid is adopted for corroding the unqualified silicon wafers under the conditions of a first preset time and a first preset temperature; a potassium hydroxide solution with a preset volume fraction is adopted for cleaning the unqualified silicon wafers; a hydrogen chloride and hydrofluoric acid solution with a preset volume fraction is adopted for cleaning the unqualified silicon wafers under the conditions of a second preset time and a second preset temperature; a diffusion technology is carried out on the unqualified silicon wafers so that sheet resistance of the unqualified silicon wafers can be within a preset range of sheet resistance; a reflectance coating plating technology is carried out on the unqualified silicon wafers so that the thickness of reflectance coatings of the unqualified silicon wafers can be within a preset thickness range. By the adoption of the technical scheme, after the unqualified silicon wafers produced before a silk-screen printing technology is performed are treated, the unqualified silicon wafers can be recycled for manufacturing solar cells, resource waste is avoided, and the production yield of products is increased.

Description

technical field [0001] The invention relates to the technical field of solar cells, and more specifically, relates to a processing method for unqualified silicon chips. Background technique [0002] The environmental pollution caused by traditional fossil energy power generation is threatening the environment on which human beings live. Therefore, it is imperative to develop a green and pollution-free energy source. Solar cells, also known as photovoltaic cells, are semiconductor devices that directly convert the sun's light energy into electrical energy. Because they are green and environmentally friendly products, they will not cause environmental pollution. Therefore, in today's energy shortage situation, solar cells are A new type of product with development prospects. [0003] Generally, the manufacturing process of crystalline silicon solar cells includes: texturing-PN junction diffusion-etching-coating-screen printing-sintering. Among them, due to the complex manufa...

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Application Information

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IPC IPC(8): H01L31/18H01L21/02
CPCH01L21/02032H01L31/1804Y02E10/547Y02P70/50
Inventor 许明金符昌京邓清龙陈耀军
Owner HAINAN YINGLI NEW ENERGY
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