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A kind of x-ray tube u target anode and its manufacturing method

An X-ray tube and anode technology, which is applied in the directions of X-ray tube electrodes, X-ray tube parts, cold cathode manufacturing, etc. Easy to oxidize and other problems to achieve the effect of ensuring stability and reliability, small degree of oxidation, and low environmental pollution

Inactive Publication Date: 2016-08-31
SICHUAN INST OF MATERIALS & TECH +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the melting points of metal U and copper are very close, with a difference of only 50°C, it is difficult to prepare an anode target by using the traditional casting method, and there is environmental pollution, and the target material is easily oxidized
In addition, there are literature and patent reports to use the vapor deposition method to plate the target on the copper base. Similarly, this will cause great pollution to the environment and easily oxidize the target.
At present, according to relevant literature, there is no report on the preparation of uranium target X-ray tube.

Method used

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  • A kind of x-ray tube u target anode and its manufacturing method
  • A kind of x-ray tube u target anode and its manufacturing method
  • A kind of x-ray tube u target anode and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0034] Example 1 U target anode preparation:

[0035] See figure 1 , using the vacuum induction melting casting process, the metal U is cast into shape, and then it is properly annealed and gradually cooled to room temperature. Then it is machined into a disc shape with a diameter of about 20mm and a thickness of 3mm. Roughness: 0.8;

[0036] Process the high-purity Cu base into a cylindrical sample, and process a cylindrical groove on the upper surface of the Cu base 2 according to the size of the U target, see figure 2 As shown, the roughness of the contact surface with U: 0.8;

[0037] Prepare the sample of U target 1, and then use an automatic polishing machine to polish the upper and lower surfaces to achieve a mirror surface while maintaining the parallelism of the upper and lower surfaces; perform ultrasonic cleaning on U target 1 and Cu base 2 for 20 minutes to remove oil stains, etc., and use alcohol to clean the workpiece wipe dry;

[0038] Put the U target 1 i...

example 2

[0044] Example 2 U target anode preparation:

[0045] See figure 1 , Add the metal U machine into a disc shape, with a diameter of about 20mm and a thickness of 3mm. Roughness: 0.8;

[0046] Process the Cu base into a cylindrical sample, process a cylindrical groove on the upper surface of the Cu base 2 according to the size of the U target, and the roughness of the contact surface with the U: 0.8;

[0047] Prepare the sample of U target 1, polish the upper and lower surfaces to reach the mirror surface, while maintaining the parallelism of the upper and lower surfaces; clean the U target 1 and Cu base 2 to remove oil stains, etc., and dry the workpiece with alcohol;

[0048] Put the U target 1 into the circular groove of the Cu base 2, and then put it into the vacuum diffusion furnace 7 as a whole between the upper indenter 3 and the lower indenter 4, so as to ensure that it is in the center of the finale;

[0049] Close the furnace door and vacuumize to a vacuum degree of 1...

example 3

[0054] Example 3 U target anode preparation:

[0055] See figure 1 , The metal U machine is added into a disc sample, with a diameter of 20mm and a thickness of 3mm. Roughness: 0.8;

[0056] Process the Cu base into a cylindrical sample, process a cylindrical groove on the upper surface of the Cu base 2 according to the size of the U target, and the roughness of the contact surface with the U: 0.8;

[0057] Prepare the sample of U target 1, polish the upper and lower surfaces to reach the mirror surface, while maintaining the parallelism of the upper and lower surfaces; clean the U target 1 and Cu base 2 to remove oil stains, etc., and dry the workpiece with alcohol;

[0058] Put the U target 1 into the circular groove of the Cu base 2, and then put it into the vacuum diffusion furnace 7 as a whole between the upper indenter 3 and the lower indenter 4, so as to ensure that it is in the center of the finale;

[0059] Close the furnace door and vacuumize to a vacuum degree of...

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Abstract

The invention discloses an X-ray tube U target anode and a manufacturing method thereof, which are used for X-ray tube preparation. The X-ray tube anode, the anode target is metal U. The use method of the X-ray tube containing the U target anode is to apply a certain voltage to emit Short-wavelength X-rays. The invention can emit short-wavelength X-rays, expand the range of use of the instrument, make the range of test materials wider, and test the body-phase stress in deeper depths of the materials, fully displaying the advantages of short wavelengths. The invention adopts vacuum hot pressing technology, under a certain temperature and a certain pressure, in a vacuum environment, the U target obtained by casting and heat treatment is closely and seamlessly connected with the copper base, which avoids the interference of gas impurities on the interface. The introduction can also facilitate the transmission of heat generated by the U target, avoiding the vacuum drop and heat accumulation that damage the target due to gas release during the operation of the X-ray tube, and ensuring the stability and reliability of the equipment.

Description

technical field [0001] The invention belongs to the technical field of X-ray tube preparation required by equipment such as industrial flaw detection, medical CT, and X-ray diffractometer, and specifically relates to an X-ray tube anode. The X-ray tube U target anode prepared by the invention can be used under the action of voltage. issue Short wavelength metal U characteristic K series X-rays. Background technique [0002] At present, most material analysis instruments directly detect the structure and properties of the surface or subsurface, such as scanning electron microscope, X-ray diffractometer, X-ray photoelectron spectrometer, various infrared and Raman spectrometers, etc. surface information. However, due to the influence of various natural defects (oxidation, machine-added defects, surface roughness, chemical segregation, surface and interface effects, etc.) on the surface of the material, the test results are sometimes difficult to reflect the real situation. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J9/02H01J35/06
Inventor 李炬李瑞文张鹏程刘天伟张忠东廖益传
Owner SICHUAN INST OF MATERIALS & TECH
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