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Wide bandgap semiconductor device and manufacturing method thereof

A wide bandgap semiconductor and wide bandgap technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of shortened device life, reduced reliability, and low reliability, and achieve Eliminate the effects of large differences in thermal expansion coefficient, simplified structure, and simplified base structure

Inactive Publication Date: 2014-12-24
TAIZHOU BEYOND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the semiconductor device or module needs to adjust the thermal expansion coefficient and heat dissipation coefficient of the accessories, resulting in a complex structure, high price and low reliability of the semiconductor device or module.
Because the wide bandgap semiconductor device can work normally at a high temperature of 350 degrees Celsius, but under the high and low temperature of the switch, the thermal fatigue of the accessories of the semiconductor device greatly reduces the reliability of the existing semiconductor device and shortens the device. The lifespan cannot even achieve industrialization

Method used

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  • Wide bandgap semiconductor device and manufacturing method thereof
  • Wide bandgap semiconductor device and manufacturing method thereof
  • Wide bandgap semiconductor device and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0049] Such as figure 1 and figure 2 As shown, the wide bandgap semiconductor device includes a chip 1 using a wide bandgap semiconductor material as a substrate and a base 2 made of a wide bandgap semiconductor material, and the base 2 is provided with a groove structure 4 for placing the chip 1 , and the substrate material of the chip and the material of the base contain the same chemical composition. Both the substrate of chip 1 and the base 2 are made of silicon carbide in the wide bandgap semiconductor material, the heat generated on the chip 1 can be transferred to the base 2 and then dissipated, and the base 2 is made of silicon carbide with good heat dissipation performance and wide bandgap Semiconductor materials can quickly dissipate heat; at the same time, because the thermal expansion coefficients are basically the same, there is no need to add various materials to adjust the thermal expansion system on the bottom of the chip 1 or accessories, which greatly simpl...

Embodiment 2

[0054] Such as image 3 As shown, the content of this embodiment is basically the same as that of the first embodiment, except that the bottom of the chip 1 has a conductive chip metal coating 5; the chip metal coating 5 has a concave-convex structure. The concavo-convex structure of the chip metal coating 5 is pits evenly distributed on the surface of the chip metal coating 5. The use of spaced pits can increase the contact area and make the contact between the chip 1 and the base 2 more firm. Other deformation forms such as protruding barbs on the surface of the chip metal plating layer 5 can achieve this purpose, and the concave-convex structure can improve the effect of electrical conduction and heat conduction. Similarly, the groove metal coating 42 on the base is one layer and the groove metal coating 42 has a concave-convex structure, and the concave-convex structure is pits uniformly distributed on the surface of the groove metal coating 42 . Of course, the above-ment...

Embodiment 3

[0056] Such as Figure 5 As shown, the content of this embodiment is basically the same as that of Embodiment 1 or Embodiment 2, the difference is that, as Figure 5 As shown, the difference is that the grooved metal coating 42 is multi-layered and the surface layer of the grooved metal coating 42 has a concave-convex structure, and the concave-convex structure is pits evenly distributed on the surface of the grooved metal coating 42 . The use of spaced pits can increase the contact area and make the contact between the chip 1 and the base 2 more firm. Of course, other deformation forms such as protruding barbs evenly distributed on the surface of the groove metal coating 42 can also be used to achieve this. For one purpose, the effect is basically the same. It can improve the effect of electric conduction and heat conduction.

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Abstract

The invention provides a wide bandgap semiconductor device and a manufacturing method of the device, and belongs to the technical field of semiconductor manufacturing. The device and the method solve the problem that existing wide bandgap semiconductor device are easily influenced by thermal expansion. The wide bandgap semiconductor device comprises a chip and a base, a wide bandgap semiconductor material serves as a substrate of the chip, the base is made of the wide bandgap semiconductor material, and a groove structure used for holding the chip is formed in the base. The invention further provides the manufacturing method of the wide bandgap semiconductor device. The substrate of the chip and the base of the wide bandgap semiconductor device are made of the wide bandgap semiconductor material, so that the aim of quick cooling can be achieved. Meanwhile, a thermal expansion coefficient and a heat release coefficient are basically the same, so that other materials used for adjusting the thermal expansion coefficient do not need to be additionally arranged at the bottom or on accessories, the structure of the wide bandgap semiconductor device is greatly simplified, influences of thermal expansion are reduced, and stability is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, and relates to a semiconductor device and a preparation method thereof, in particular to a wide-bandgap semiconductor device made of a wide-bandgap semiconductor material and a preparation method thereof. Background technique [0002] Wide bandgap semiconductor materials refer to semiconductor materials with an energy gap greater than or equal to 2.3eV, which are called third-generation semiconductor materials. Mainly include diamond, silicon carbide, gallium nitride, etc. Compared with the first-generation and second-generation semiconductor materials, the third-generation semiconductor materials have the characteristics of large band gap, high electron drift saturation velocity, small dielectric constant, and good conductivity. It has superior properties and potential Great prospects. [0003] In the existing chip technology, the bottom of the chip needs to be fixed in turn ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L23/12H01L23/34H01L24/32H01L24/83H01L2224/83385H01L2224/8384H01L23/13H01L23/3736H01L23/488H01L23/147H01L23/482H01L23/3675H01L29/1608
Inventor 星野政宏张乐年
Owner TAIZHOU BEYOND TECH
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