Pre-deposition technology, diffusion technology and diffusion apparatus

Abstract

The invention provides a pre-deposition technology, a diffusion technology and a diffusion apparatus. The pre-deposition technology is used for diffusing a required diffusion source film on the surface of a substrate, and comprises the following steps: introducing above two precursors into a diffusion cavity according to a predetermined sequence, and introducing a purge gas after the introduction of each of the precursors and before the introduction of a next precursor, wherein the purge gas is a gas having no reaction with the precursors, and the above purge gas introduction step is carried out at least one time. The pre-deposition technology can accurately control the thickness of the diffusion source film deposited on the surface of the substrate to accurately control the doping concentration and the concretion depth of the diffusion technology, and can improve the growth uniformity of the diffusion source film on the surface of the substrate in order to improve the step covering, the technology repeatability and the film forming quality of the patterned substrate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor processing, and in particular relates to a pre-deposition process, a diffusion process and diffusion equipment. Background technique [0002] In the manufacturing process of semiconductor devices, it is usually necessary to dope P-type or N-type impurities in the silicon substrate to form a PN junction. Diffusion and ion implantation are two main methods of semiconductor doping. In the solar cell industry, since N-type crystalline silicon has the advantage of fewer carriers and longer lifetime than P-type crystalline silicon, diffusion methods are often used to dope P-type impurities (such as boron) into N-type crystalline silicon to form emitters ( PN junction). [0003] figure 1 for existing diffusion equipment. see figure 1 , the diffusion device includes a diffusion chamber 10 and an intake unit, wherein a plurality of substrates S are placed in the diffusion chamber 10; the intake u...

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Problems solved by technology

[0005] The above-mentioned diffusion process inevitably has the following problems in practical applications, that is, since one or more precursors required by the diffusion process are simultaneously introduced into the diffusion chamber 10 for reaction to generate the diffusion source film required for diffusion , which makes the reaction between the precursors not self-limiting, resulting in the inability to control the thickness of the diffusion source film deposited on the substrate surface, resulting in the inability to control the doping concentration and junction depth of the diffusion process; and, due to The irregular flow of the precursor during the process also leads to poor uniformity of the growth of the diffusion source film on the substrate surface, resulting in poor step coverage, process repeatability and film formation quality of the graphic substrate

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