A single crystal furnace online doping device

A single crystal furnace and furnace cover technology, which is applied in the directions of single crystal growth, diffusion/doping, crystal growth, etc., can solve the problem of increasing contact time between doping elements and molten silicon, unable to do online real-time doping, and controllable doping process Poor performance and other problems, to achieve the effect of ensuring sufficient contact and contact time, no loss of doping substances, and improving the doping effect

Active Publication Date: 2016-08-24
晶澳(无锡)光伏科技有限公司
View PDF16 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the disadvantages of poor doping effect, poor controllability of the doping process and inability to do online real-time doping in the prior art, the present invention provides a single crystal furnace online doping device that is easy to operate, safe and reliable, and increases the doping The contact time between hetero elements and molten silicon realizes real-time doping, which is suitable for stretching single crystal silicon by Czochralski method, and provides reliable technical support for improving the manufacturing technology and working performance of solar photovoltaic cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A single crystal furnace online doping device
  • A single crystal furnace online doping device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The present invention will be further described below in conjunction with accompanying drawing.

[0020] refer to Figure 1~2 , The composition of the embodiment includes a silo mechanism, a conveying mechanism and a control mechanism connected to each other, and the silo mechanism and the conveying mechanism perform doping operations according to the instructions of the control mechanism.

[0021] Among them, the silo mechanism includes the silo shell 1, the silo door 2, the silo sealing mechanism 3, the silo 4, the silo motor 5, the U-shaped discharge pipe 6, the collecting funnel 7, the argon gas charging port 8, the falling Material deceleration pipe 13 and observation window 18. The inside of the silo shell 1 is provided with a freely rotatable silo 4 and a U-shaped discharge pipe 6 connected with the silo 4. The lower part of the silo shell 1 is provided with a collecting funnel 7, and the lower part of the collecting funnel 7 is connected with the falling materi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to the field of adding doping materials in single crystal growth, in particular to an online doping device for a single crystal furnace. In the prior art, in the process of producing monocrystalline silicon by the Czochralski method, the doping effect is not good, the controllability of the doping process is poor, and the real-time doping in the stretching process cannot be realized. The present invention proposes a machine-based , The on-line doping device of single crystal furnace combined with electromechanical, increases the contact time between doping elements and molten silicon, realizes real-time doping, and the main technical parameters in the doping process are controllable. The invention has simple and compact design, is easy to implement, and has low energy consumption cost, is applicable to the field of doping treatment of various crystals, and has broad application and popularization prospects.

Description

technical field [0001] The invention relates to the field of adding doping materials in single crystal growth, in particular to an online doping device for a single crystal furnace. Background technique [0002] The doping methods used in the production of volatile doping element single crystal silicon by the Czochralski method mainly include the eutectic method and the input method. The eutectic method is to melt dopant substances together with polysilicon in a quartz crucible. The input method is to melt the polysilicon in the quartz crucible completely, and then melt the doping substance into the silicon through a special device to achieve the purpose of doping. In actual doping, doping is divided into gas phase doping and liquid phase doping according to the characteristics of doping elements. For example, when elements such as arsenic and phosphorus are doped, since the vaporization points of arsenic and phosphorus are low and they are easy to volatilize, gas phase do...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B31/06C30B15/04
Inventor 边志坚马辉东赵京通赵建光王瑞贤李润飞武建刚
Owner 晶澳(无锡)光伏科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap