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Method for manufacturing selective emitter solar cell

A solar cell and emitter technology, applied in the field of solar cells, can solve the problems of secondary pollution, cell pollution, low cell processing efficiency, etc., and achieve the effects of easy cleaning, improving efficiency, and realizing large-scale industrial production.

Active Publication Date: 2015-01-07
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the liquid source spin coating is prone to secondary pollution, and the diffusion layer formed without thermal diffusion has stable performance.
Secondly, the laser ablation process will also bring some pollution to the cell, and the processing efficiency of the cell is not high, and it is difficult to match the high-speed production of the production line.

Method used

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  • Method for manufacturing selective emitter solar cell
  • Method for manufacturing selective emitter solar cell
  • Method for manufacturing selective emitter solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] 1. Such as figure 1 As shown, a P-type silicon wafer 1 with good performance, high purity, and resistivity of 10 ohm / cm is taken and subjected to KOH alkaline polishing to remove scratches and uneven areas on the surface of the bare silicon wafer.

[0044] 2. Such as figure 2 As shown, the silicon wafer is reacted in an alkaline solution to form an inverted pyramid texture structure 2, and then acid cleaning is performed to remove the scratch damage layer, organic matter and metal ions on the surface of the silicon wafer.

[0045] 3. Such as image 3 As shown, put the silicon wafer into a diffusion furnace for diffusion, using liquid POCl 3 As a diffusion source, diffusion is performed at 850°C to form n on the surface 3 of the silicon wafer. + Layer, square resistance is 20ohm / sq, after diffusion, use hydrofluoric acid to remove surface phosphorous silicate glass.

[0046] 4. Such as Figure 4 As shown, the screen printing barrier ink paste 4RSTINK SCR CLEAR (purchased from ...

Embodiment 2

[0053] 1. Such as figure 1 As shown, a P-type silicon wafer 1 with good performance, high purity, and resistivity of 3 ohm / cm is taken and subjected to KOH alkaline polishing to remove scratches and uneven areas on the surface of the bare silicon wafer.

[0054] 2. Such as figure 2 As shown, the silicon wafer is reacted in an alkaline solution to form an inverted pyramid texture structure 2, and then acid cleaning is performed to remove the scratch damage layer, organic matter and metal ions on the surface of the silicon wafer.

[0055] 3. Such as image 3 As shown, put the silicon wafer into a diffusion furnace for diffusion, using liquid POCl 3 As a diffusion source, diffusion is performed at 850°C to form n on the surface 3 of the silicon wafer. + Layer, square resistance is 20ohm / sq, after diffusion, use hydrofluoric acid to remove surface phosphorous silicate glass.

[0056] 4. Such as Figure 4 As shown, the screen printing barrier ink paste 4 Resist Ink (purchased from PVGS c...

Embodiment 3

[0063] 1. Such as figure 1 As shown, a P-type silicon wafer 1 with good performance, high purity, and resistivity of 5 ohm / cm is taken and subjected to KOH alkaline polishing to remove scratches and uneven areas on the surface of the bare silicon wafer.

[0064] 2. Such as figure 2 As shown, the silicon wafer is reacted in an alkaline solution to form an inverted pyramid texture structure 2, and then acid cleaning is performed to remove the scratch damage layer, organic matter and metal ions on the surface of the silicon wafer.

[0065] 3. Such as image 3 As shown, put the silicon wafer into a diffusion furnace for diffusion, using liquid POCl 3 As a diffusion source, diffusion is performed at 850°C to form n on the surface 3 of the silicon wafer. + Layer, square resistance is 20ohm / sq, after diffusion, use hydrofluoric acid to remove surface phosphorous silicate glass.

[0066] 4. Such as Figure 4 As shown, the screen printing barrier ink paste 4 Resist Ink (purchased from PVGS c...

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Abstract

The invention discloses a method for manufacturing a selective emitter solar cell. The method comprises the following steps of conducting polishing, texturing, diffusion, slurry printing, etching, cleaning, film coating, electrode printing and sintering on a silicon chip. Because barrier ink slurry which is high in printability, capable of blocking acid etching, not prone to adhering and easy to clean away is adopted, the production efficiency of the selective emitter solar cell is improved, and production cost is lowered; in addition, an adopted acid etching solution is HF / HNO3 / H2O, so sheet resistance can be improved remarkably. Compared with the prior art, the number of process steps is reduced, the method can be well combined with existing equipment, large-scale industrial production is achieved, and the solar cell with the efficiency higher than 19.5% is rapidly obtained in a high-precision mode.

Description

Technical field [0001] The invention belongs to the technical field of solar cells, in particular to a method for preparing selective emitter solar cells. Background technique [0002] Crystalline silicon solar cells account for more than 85% of solar cells currently industrialized and applied in the world. Because crystalline silicon solar cells have the advantages of high efficiency and low attenuation, they are widely used in building roofs and large photovoltaic power stations. In China, due to the new policy of photovoltaic grid-connected power generation, more and more families will choose to install crystalline silicon solar cell modules on the roof for power generation. [0003] The efficiency of conventional crystalline silicon solar cells with P-type substrates is generally above 18%. Since crystalline silicon solar cells have a life cycle of up to 25 years in practical applications, their attenuation rate is a very important technical parameter. Compared with the high ...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 陈毅湛金婷婷李远兴曾庆光范东华龙拥兵丁瑞钦沈辉
Owner WUYI UNIV
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