Preparation method of high-efficiency crystalline silicon solar cell
A technology of solar cells and crystalline silicon, which is applied in the field of solar cells, can solve the problems that cannot meet the large-scale and high-speed production requirements, the selective diffusion layer preparation process is not perfect, and the laser slotting process takes a long time, etc., to achieve large-scale Industrial production, not easy to stick to the plate, easy to clean the effect
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[0044] 1. If figure 1 As shown, take a P-type silicon wafer 1 with good performance, high purity, and a resistivity of 10 ohm / cm, and perform KOH alkaline polishing to remove scratches and uneven areas on the surface of the bare silicon wafer.
[0045] 2. If figure 2 As shown, the silicon wafer is placed in an alkaline solution to react to form an inverted pyramid suede structure 2, and then acid cleaning is performed to remove the scratch damage layer, organic matter and metal ions on the surface of the silicon wafer.
[0046] 3. If image 3 As shown, the silicon wafer is placed in a diffusion furnace for diffusion, using liquid POCl 3 As a diffusion source, diffusion is carried out at 850°C to form n on the surface 3 of the silicon wafer + layer, the square resistance is 20ohm / sq, after diffusion, use hydrofluoric acid to remove the surface phosphosilicate glass.
[0047] 4. If Figure 4 As shown, the screen printing barrier ink paste 4RSTINK SCR CLEAR (purchased from ...
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