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A kind of preparation method of selective emitter solar cell

A solar cell and selective technology, applied in the field of solar cells, can solve problems such as cell pollution, secondary pollution, and low battery processing efficiency, and achieve the effects of improving efficiency, easy cleaning, and realizing large-scale industrial production

Active Publication Date: 2017-06-27
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the liquid source spin coating is prone to secondary pollution, and the diffusion layer formed without thermal diffusion has stable performance.
Secondly, the laser ablation process will also bring some pollution to the cell, and the processing efficiency of the cell is not high, and it is difficult to match the high-speed production of the production line.

Method used

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  • A kind of preparation method of selective emitter solar cell
  • A kind of preparation method of selective emitter solar cell
  • A kind of preparation method of selective emitter solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] 1. If figure 1 As shown, take a P-type silicon wafer 1 with good performance, high purity, and a resistivity of 10 ohm / cm, and perform KOH alkaline polishing to remove scratches and uneven areas on the surface of the bare silicon wafer.

[0044] 2. If figure 2 As shown, the silicon wafer is placed in an alkaline solution to react to form an inverted pyramid suede structure 2, and then acid cleaning is performed to remove the scratch damage layer, organic matter and metal ions on the surface of the silicon wafer.

[0045] 3. If image 3 As shown, the silicon wafer is placed in a diffusion furnace for diffusion, using liquid POCl 3 As a diffusion source, diffusion is carried out at 850°C to form n on the surface 3 of the silicon wafer + layer, the square resistance is 20ohm / sq, after diffusion, use hydrofluoric acid to remove the surface phosphosilicate glass.

[0046] 4. If Figure 4As shown, the screen printing barrier ink paste 4RSTINK SCR CLEAR (purchased from S...

Embodiment 2

[0053] 1. If figure 1 As shown, take a P-type silicon wafer 1 with good performance, high purity, and a resistivity of 3 ohm / cm, and perform KOH alkaline polishing to remove scratches and uneven areas on the surface of the bare silicon wafer.

[0054] 2. If figure 2 As shown, the silicon wafer is placed in an alkaline solution to react to form an inverted pyramid suede structure 2, and then acid cleaning is performed to remove the scratch damage layer, organic matter and metal ions on the surface of the silicon wafer.

[0055] 3. If image 3 As shown, the silicon wafer is placed in a diffusion furnace for diffusion, using liquid POCl 3 As a diffusion source, diffusion is carried out at 850°C to form n on the surface 3 of the silicon wafer + layer, the square resistance is 20ohm / sq, after diffusion, use hydrofluoric acid to remove the surface phosphosilicate glass.

[0056] 4. If Figure 4 As shown, the screen printing resist ink paste 4Resist Ink (purchased from PVGS com...

Embodiment 3

[0063] 1. If figure 1 As shown, take a P-type silicon wafer 1 with good performance, high purity, and a resistivity of 5 ohm / cm, and perform KOH alkaline polishing to remove scratches and uneven areas on the surface of the bare silicon wafer.

[0064] 2. If figure 2 As shown, the silicon wafer is placed in an alkaline solution to react to form an inverted pyramid suede structure 2, and then acid cleaning is performed to remove the scratch damage layer, organic matter and metal ions on the surface of the silicon wafer.

[0065] 3. If image 3 As shown, the silicon wafer is placed in a diffusion furnace for diffusion, using liquid POCl 3 As a diffusion source, diffusion is carried out at 850°C to form n on the surface 3 of the silicon wafer + layer, the square resistance is 20ohm / sq, after diffusion, use hydrofluoric acid to remove the surface phosphosilicate glass.

[0066] 4. If Figure 4 As shown, the screen printing resist ink paste 4Resist Ink (purchased from PVGS com...

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Abstract

The invention discloses a preparation method of a selective emitter solar cell. The steps of the method include polishing, texturing, diffusion, printing slurry, etching, cleaning, coating, printing electrodes, and sintering on the silicon wafer. The barrier ink slurry that is easy to clean, the invention improves the efficiency of producing selective emitter solar cells and reduces the production cost. In addition, the acid etching solution used is HF / HNO3 / H2O, which can significantly increase the square resistance. Compared with the prior art, the invention reduces the process steps, can be well combined with the existing equipment, realizes large-scale industrial production, and obtains solar cells with an efficiency of more than 19.5% with high precision and quickly.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a preparation method of a selective emitter solar cell. Background technique [0002] Crystalline silicon solar cells account for more than 85% of the world's industrialized and applied solar cells. Because of the advantages of high efficiency and low attenuation, crystalline silicon solar cells are widely used in building roofs and large-scale photovoltaic power plants. In China, due to the new policy that photovoltaics can be connected to the grid for power generation, more and more families will choose to install crystalline silicon solar cell modules on the roof for power generation. [0003] The efficiency of conventional crystalline silicon solar cells with P-type substrates is generally above 18%. Since crystalline silicon solar cells have a life cycle of up to 25 years in practical applications, their attenuation rate is a very important technical parameter. Compare...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 陈毅湛金婷婷李远兴曾庆光范东华龙拥兵丁瑞钦沈辉
Owner WUYI UNIV
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