Highly integrated h-shaped source-drain-gate assisted U-shaped channel high-mobility junctionless transistor

Abstract

The invention relates to a high-integration H-shaped source-drain-gate assisted control U-shaped channel high-mobility junctionless transistor, which adopts two gate electrodes controlled independently of each other, such as an H-shaped assisted control gate electrode and a gate electrode, to ensure that the device is reduced The doping concentration is used to increase the mobility, avoiding the decrease of device mobility and stability caused by the enhancement of random scattering effect under high doping concentration, and at the same time, the H-shaped auxiliary control gate electrode is used to effectively reduce the resistance of the source and drain regions, thereby solving the problem of The low doping concentration of the channel of ordinary junctionless transistors will lead to the increase of the source-drain resistance, while the high doping concentration will lead to the decrease of device mobility and stability. At the same time, the U-shaped single crystal Silicon is used as the channel part of the device. Compared with the ordinary planar structure, the effective channel length is significantly increased to reduce the short channel effect of the device at the deep nanoscale without additional increase in the chip area, so it is suitable for popularization and application.

Description

technical field [0001] The invention belongs to the field of ultra-large-scale integrated circuit manufacturing, and in particular relates to a high-integration H-shaped source-drain-gate auxiliary control U-shaped channel high-mobility junction-free transistor structure suitable for ultra-high integrated integrated circuit manufacturing. Background technique [0002] The basic unit of integrated circuits, MOSFETs, transistors, with the continuous reduction in size, need to achieve multiple orders of magnitude concentration differences within a distance of several nanometers to form extremely steep source and drain PN junctions. Such a concentration gradient is essential for doping And heat treatment process has extremely high requirements. The above problems can be effectively solved by junction-free field-effect transistors fabricated on SOI wafers. Junction-free transistors adopt multi-subconduction, and the source, drain and channel regions of the device have the same hi...

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Problems solved by technology

However, such a highly doped channel will lead to a significant decrease in the mobility of the device, and the random scattering of impurities will seriously affect the reliability of the device.

In order to improve the mobility and reliability of junctionless devices, it is necessary to reduce the doping concentration of the silicon film, but the reduction of the doping concentration will increase the source-drain resistance and affect the turn-on characteristics of the device

In addition, the common transistor structure based on the planar structure, with the continuous shortening of the channel length, the short channel effect is gradually enhanced, and the device is difficult to turn off

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