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Green organic light-emitting diode and manufacturing method thereof

An electroluminescence and green technology, applied in the field of green organic electroluminescence devices and their preparation, can solve the problem of high working voltage of light-emitting devices, and achieve the effects of alleviating insufficient capture capacity, balanced distribution and slow efficiency decay

Active Publication Date: 2015-01-14
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The device has good efficiency stability and high maximum luminous brightness, however, the operating voltage of the light-emitting device is still high

Method used

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  • Green organic light-emitting diode and manufacturing method thereof
  • Green organic light-emitting diode and manufacturing method thereof
  • Green organic light-emitting diode and manufacturing method thereof

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preparation example Construction

[0072] The present invention also provides a method for preparing a green organic light-emitting device described in the above technical solution, comprising the following steps:

[0073] providing an anode layer on the substrate;

[0074] On the surface of the anode layer, an anode modification layer, a hole transport-electron blocking layer, a hole-dominated light-emitting layer, an electron-dominated light-emitting layer, a hole block-electron transport layer, a cathode modification layer and a cathode layer are sequentially evaporated to obtain a green organic Light emitting devices.

[0075] The invention provides a substrate on which an anode layer is arranged. In the present invention, the substrate is consistent with the substrate described in the above technical solution, and will not be repeated here. In the present invention, it is preferable to etch the anode material provided on the substrate, form a plurality of thin strip electrodes on the substrate, and obtai...

Embodiment 1

[0093] First, the ITO anode layer on the ITO glass is laser-etched into a strip electrode, and then ultrasonically cleaned with cleaning solution and deionized water for 15 minutes and dried in an oven; then the dried substrate is placed in a pre-treatment vacuum Chamber, under the atmosphere with a vacuum degree of 10Pa, the ITO anode is subjected to low-pressure plasma treatment with a voltage of 400 volts for 3 minutes, and then transferred to the organic evaporation chamber;

[0094] In a vacuum of 1×10 -5 Pa~2×10 -5 In the organic evaporation chamber of Pa, 3nm thick MoO was sequentially evaporated on the ITO layer at a rate of 0.01nm / s 3 Anode modification layer 3; 40nm thick TAPC hole transport-electron blocking layer 4 evaporated at a rate of 0.05nm / s; Ir(ppy) evaporated at a rate of 0.0035nm / s 3 Evaporate TcTa at a rate of 0.05nm / s to obtain a 10nm thick hole-dominated light-emitting layer 5; 3 , Evaporating CzSi at a rate of 0.05nm / s to obtain a 10nm thick electron-...

Embodiment 2

[0102] First, the ITO anode layer on the ITO glass is laser-etched into strip electrodes, and then ultrasonically cleaned with cleaning solution and deionized water for 15 minutes and dried in an oven. Then put the dried substrate into the pretreatment vacuum chamber, and then transfer the ITO anode to the organic evaporation chamber after a 3-minute low-pressure plasma treatment with a voltage of 400 volts in an atmosphere with a vacuum degree of 10 Pa;

[0103] In a vacuum of 1×10 -5 Pa~2×10 -5 In the organic evaporation chamber of Pa, 3nm thick MoO was sequentially evaporated on the ITO layer at a rate of 0.01nm / s 3 Anode modification layer 3; 40nm thick TAPC hole transport-electron blocking layer 4 evaporated at a rate of 0.05nm / s; Ir(ppy) evaporated at a rate of 0.0035nm / s 3 Evaporate mCP at a rate of 0.05nm / s to obtain a 10nm thick hole-dominated light-emitting layer 5; 3 Evaporate 26DCzPPy at a rate of 0.05nm / s to obtain a 10nm-thick electron-dominated light-emitting...

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Abstract

The invention provides a green organic light-emitting diode. The green organic light-emitting diode comprises a substrate, an anode layer, an anode modification layer, a hole transport-electron block layer, a hole-dominated light-emitting layer, an electron-dominated light-emitting layer, a hole block-electron transport layer, a cathode modification layer and a cathode layer in sequence. The electron-dominated light-emitting layer comprises 0.05-2.0 wt% of organic sensitized materials, 5-15 wt% of green organic light-emitting materials, and the balance being electron type organic host materials, wherein the organic sensitized materials are transition metal compounds with energy at matched energy levels of. According to the green organic light-emitting diode, all the organic sensitized materials play the roles as a carrier deep constraint center and an energy transfer step, so that distribution of carriers is balanced, the light-emitting range of the device is expanded, energy transfer from the host materials to the light-emitting materials is accelerated, the working voltage of the light-emitting diode is reduced, efficient of the light-emitting diode is improved, and the service life of the light-emitting diode is prolonged.

Description

technical field [0001] The invention relates to the technical field of electroluminescence, in particular to a green organic electroluminescence device and a preparation method thereof. Background technique [0002] An organic electroluminescent device is a self-luminous device that generates light when charges are injected into an organic film between a hole injection electrode (anode) and an electron injection electrode (cathode), and the electrons and holes combine and then annihilate . Organic electroluminescent devices have the characteristics of low voltage, high brightness, wide viewing angle, etc., so organic electroluminescent devices have been developed rapidly in recent years. Green organic electroluminescent devices have become a research hotspot due to their application prospects in monochrome display and white light modulation. [0003] For a long time, trivalent iridium complexes have been regarded as ideal organic electroluminescent materials by academia an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/50H01L51/54H01L51/56
CPCH10K85/146H10K85/342H10K50/00H10K50/121H10K50/80H10K71/00
Inventor 周亮张洪杰李雅囡
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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