(NH4)2V4O9 film and preparation method thereof

A 2V4O9 thin film technology, which is applied in the field of vanadate nanomaterial 2V4O9 thin film and its preparation, can solve the problems of not being able to directly form a film, and achieve the effect of low cost, excellent performance and unique shape

Active Publication Date: 2015-01-28
INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, scientists have prepared vanadates with different shapes and compositions, such as NH 4 V 4 o 10 Nanoflowers, AgVO 3 Nanobelt, Mn 2 V 2 o 7 Nano Gang, (NH 4 ) 2 V 3 o 8 Nanosheets, etc., but (NH 4 ) 2 V 4 o 9 The preparation of nanosheet structure has not been reported yet
M

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  • (NH4)2V4O9 film and preparation method thereof
  • (NH4)2V4O9 film and preparation method thereof
  • (NH4)2V4O9 film and preparation method thereof

Examples

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[0062] Example 1:

[0063] Add 0.7mmol of tartaric acid and 60mL of deionized water into the reaction vessel and place it in an ultrasonic cleaner for 30 minutes, then add 5.6mmol of vanadium pentoxide to the reaction vessel and stir for 20 minutes, then add 3mL of directing agent 25% ammonia dropwise Stir and react for 50 minutes to obtain a precursor solution. Take 50 mL of the precursor solution and transfer it to a reactor with a 100 mL polytetrafluoroethylene liner. At the same time, put a piece of quartz substrate rinsed with deionized water into the reactor. In the bladder, seal the reaction kettle and let it stand for 5 hours, then put the reaction kettle in an oven and heat it to 180°C for 24 hours and cool it naturally. After opening the autoclave, take out the substrate and rinse it with deionized water once, then rinse once with ethanol, repeat the rinse three times, and dry it at 60°C for 8 hours to obtain (NH) deposited on the quartz substrate. 4 ) 2 V 4 O 9 film.

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Example Embodiment

[0066] Example 2

[0067] Add 0.7mmol of tartaric acid and 70mL of deionized water to the reaction vessel and place it in an ultrasonic cleaner for 30 minutes, then add 5.9mmol of vanadium pentoxide to the reaction vessel and stir for 30 minutes, then add 6mL of directing agent ammonia dropwise and stir. After reacting for 30 minutes, the precursor solution is obtained. Take 60 mL of the precursor solution and transfer it to a 100 mL polytetrafluoroethylene liner reactor. At the same time, put a piece of quartz substrate rinsed with deionized water into the reactor liner. After the reaction kettle is sealed, let it stand for 10 hours, and then put the reaction kettle in an oven to heat to 180°C for 24 hours, and cool naturally. After opening the autoclave, take out the substrate and rinse it with deionized water once, then rinse once with ethanol, repeat the rinse three times, and dry it at 60°C for 10 hours to obtain (NH 4 ) 2 V 4 O 9 film.

[0068] Such as Figure 4 with Figure...

Example Embodiment

[0069] Example 3

[0070] Add 0.73mmol of tartaric acid and 40mL of deionized water to the reaction vessel and place it in an ultrasonic cleaner for 20 minutes, then add 6.2mmol of vanadium pentoxide to the reaction vessel and stir for 25 minutes, then add 7mL of directing agent ammonia dropwise and stir. After reacting for 40 minutes, the precursor solution is obtained. Take 90 mL of the precursor solution and transfer it to a 100 mL polytetrafluoroethylene liner reactor. At the same time, put a piece of quartz substrate rinsed with deionized water into the reactor liner. After the reaction kettle is sealed, it is allowed to stand for 10 hours, and then the reaction kettle is placed in an oven and heated to 200°C for 24 hours and cooled naturally. After opening the autoclave, take out the substrate and rinse it with deionized water once, and then rinse once with ethanol. Repeat the rinse three times and dry it at 60°C for 10 hours to obtain (NH) deposited on the conductive glass...

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Abstract

The invention discloses an (NH4)2V4O9 film and a preparation method thereof. According to the method, a one-step hydrothermal method is adopted, an aqueous solution serves as a reaction system in a specific airtight reactor, and the reaction system is heated to generate a high pressure, so that (NH4)2V4O9 films with controllable morphology and film thickness can be directly prepared on different substrates. The blank in preparation of the (NH4)2V4O9 film is filled, and the preparation method disclosed by the invention is easy to operate, high in controllability and high in repeatability. The (NH4)2V4O9 film prepared by the invention has huge application potentials in the electrochemical and optical fields.

Description

technical field [0001] The present invention relates to a kind of nano material, be specifically related to a kind of vanadate nano material (NH 4 ) 2 V 4 o 9 Thin films and methods for their preparation. Background technique [0002] my country is rich in vanadium resources and is the fifth largest vanadium resource country in the world. At present, vanadium and its compound materials are mainly used in steel and catalysts. The application of vanadium and its compounds is deeply developed, which is of great significance to the optimal utilization of vanadium resources in my country and the construction of national economy. Positive meaning. [0003] Among the transition metal elements, the price of vanadium is lower than that of cobalt and nickel, and it is a typical multivalent transition metal element, which determines that the chemical properties of vanadium are very active and can form a variety of oxides and oxo acid salts. As a well-known transition metal salt, va...

Claims

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Application Information

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IPC IPC(8): C01G31/00C03C17/22C23C18/16
CPCC03C17/006C03C17/25C03C2217/42C23C18/1676
Inventor 杨雪梅邓建国刘忠平纪兰香白小峰马春彦
Owner INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS
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